ECS Journal of Solid State Science and Technology - IOPscience

ECS Journal of Solid State Science and Technology - IOPscience
ECS Journal of Solid State Science and Technology
The Electrochemical Society (ECS)
was founded in 1902 to advance the theory and practice at the forefront of electrochemical and solid state science and technology, and allied subjects.
Find out more about ECS publications
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JSS is a peer-reviewed journal covering fundamental and applied areas of solid-state science and technology, including experimental and theoretical aspects of the chemistry, and physics of materials and devices.
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Median submission to first decision before peer review
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40 days
Impact factor
2.2
Citescore
4.4
The following article is
Open access
Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications
Alain E. Kaloyeros
et al
2020
ECS J. Solid State Sci. Technol.
063006
View article
, Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications
PDF
, Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications
Accelerating interest in silicon nitride thin film material system continues in both academic and industrial communities due to its highly desirable physical, chemical, and electrical properties and the potential to enable new device technologies. As considered here, the silicon nitride material system encompasses both non-hydrogenated (SiN
) and hydrogenated (SiN
:H) silicon nitride, as well as silicon nitride-rich films, defined as SiN
with C inclusion, in both non-hydrogenated (SiN
(C)) and hydrogenated (SiN
:H(C)) forms. Due to the extremely high level of interest in these materials, this article is intended as a follow-up to the authors’ earlier publication [A. E. Kaloyeros, F. A. Jové, J. Goff, B. Arkles, Silicon nitride and silicon nitride-rich thin film technologies: trends in deposition techniques and related applications,
ECS J. Solid State Sci. Technol.
, 691 (2017)] that summarized silicon nitride research and development (R&D) trends through the end of 2016. In this survey, emphasis is placed on cutting-edge achievements and innovations from 2017 through 2019 in Si and N source chemistries, vapor phase growth processes, film properties, and emerging applications, particularly in heterodevice areas including sensors, biointerfaces and photonics.
The following article is
Open access
Review—ZnO-based Thin Film Metal Oxide Semiconductors and Structures: Transistors, Optoelectronic Devices and Future Sustainable Electronics
Darragh Buckley
et al
2025
ECS J. Solid State Sci. Technol.
14
015001
View article
, Review—ZnO-based Thin Film Metal Oxide Semiconductors and Structures: Transistors, Optoelectronic Devices and Future Sustainable Electronics
PDF
, Review—ZnO-based Thin Film Metal Oxide Semiconductors and Structures: Transistors, Optoelectronic Devices and Future Sustainable Electronics
Metal oxide thin films are critically important materials for modern technologies, particularly semiconductor thin films in transistors and optoelectronic applications. Many metal oxide thin films attract interest for their electronic bandgap, charge carrier mobility, optical opacity, luminescence, low cost, relative abundance, and environmentally-friendly production. Additionally, these properties are often tuneable via particle size, film density, surface morphology, film deposition, growth method, hetero-interface engineering or ion-doping. The n-type semiconducting zinc oxide (ZnO) is an important material, possessing a variety of useful properties including an intrinsically wide direct bandgap, high electron mobility, relatively high exciton binding energy, high optical transparency, demonstrated metal-ion doping, a range of different particle morphologies and deposition methods, electro/photoluminescence, low cost, and a variety of existing green synthesis methods. Here, these aspects of ZnO and some related compound semiconducting oxides are reviewed, focusing on how the unique properties of these metal oxides make them suitable for a range of different applications from thin film transistors, high mobility oxide interfaces, transparent conductive oxides, photoanodes photodetectors, chemical sensors, photocatalysts, superlattice electronics, and more. The properties and deposition methods and their impact on functionality will be discussed alongside their role in sustainable optoelectronics.
The following article is
Open access
TCAD Simulation Models, Parameters, and Methodologies for
-Ga
Power Devices
Hiu Yung Wong 2023
ECS J. Solid State Sci. Technol.
12
055002
View article
, TCAD Simulation Models, Parameters, and Methodologies for β-Ga2O3 Power Devices
PDF
, TCAD Simulation Models, Parameters, and Methodologies for β-Ga2O3 Power Devices
-Ga
is an emerging material and has the potential to revolutionize power electronics due to its ultra-wide-bandgap (UWBG) and lower native substrate cost compared to Silicon Carbide and Gallium Nitride. Since
-Ga
technology is still not mature, experimental study of
-Ga
is difficult and expensive. Technology-Computer-Aided Design (TCAD) is thus a cost-effective way to study the potentials and limitations of
-Ga
devices. In this paper, TCAD parameters calibrated to experiments are presented. They are used to perform the simulations in heterojunction p-NiO/n-Ga
diode, Schottky diode, and normally-off Ga
vertical FinFET. Besides the current-voltage (I-V) simulations, breakdown, capacitance-voltage (C-V), and short-circuit ruggedness simulations with robust setups are discussed. TCAD Sentaurus is used in the simulations but the methodologies can be applied in other simulators easily. This paves the road to performing a holistic study of
-Ga
devices using TCAD.
The following article is
Open access
Review—Ionizing Radiation Damage Effects on GaN Devices
S. J. Pearton
et al
2016
ECS J. Solid State Sci. Technol.
Q35
View article
, Review—Ionizing Radiation Damage Effects on GaN Devices
PDF
, Review—Ionizing Radiation Damage Effects on GaN Devices
Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaN-based blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20–30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN–based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while
60
Co γ-ray irradiation leads to much smaller changes in HEMT drain current relative to the other forms of radiation. In InGaN/GaN blue LEDs irradiated with protons at fluences near 10
14
cm
−2
or electrons at fluences near 10
16
cm
−2
, both current-voltage and light output-current characteristics are degraded with increasing proton dose. The optical performance of the LEDs is more sensitive to the proton or electron irradiation than that of the corresponding electrical performances.
The following article is
Open access
Review—Betavoltaic Cell: The Past, Present, and Future
Chunlin Zhou
et al
2021
ECS J. Solid State Sci. Technol.
10
027005
View article
, Review—Betavoltaic Cell: The Past, Present, and Future
PDF
, Review—Betavoltaic Cell: The Past, Present, and Future
In recent years, betavoltaic batteries have become an ideal power source for micro electromechanical systems. Betavoltaic battery is a device that converts the decay energy of beta emitting radioisotope sources into electrical energy using transducers. They have the advantages of high energy density, long service life, strong anti-interference ability, small size, light weight, easy miniaturization and integration, thus it has become a research hotspot in the field of micro energy. However, to date, the low energy conversion efficiencies as well as technological limitations of betavoltaic batteries impede their further application. In this review, the theory of betavoltaic energy conversion and recent understanding of the ideal material and structure design of the betavoltaic batteries for efficient exciton production, dissociation and charge transport is described, as well as recent attempts to realize optimum results. This review article concludes by identifying the remaining challenges for the improvement of battery performance and by providing perspectives toward real application of betavoltaic batteries.
The following article is
Open access
Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding
F. Nagano
et al
2022
ECS J. Solid State Sci. Technol.
11
063012
View article
, Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding
PDF
, Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding
Achieving a void-free bonding interface is an important requirement for the wafer-to-wafer direct bonding process. The two main potential mechanisms for void formation at the interface are (i) void formation induced by gas, such as condensation by-products caused by the bonding process or outgassing of trapped precursors, and (ii) void formation induced by physical obstacles, such as particles. In this work, emphasis is on the latter process. Particles were intentionally deposited on the wafer prior to bonding to study the kinetics of the physical void formation process. Void formations induced by particles deposited on different dielectrics bonding materials were analyzed using scanning acoustic microscopy and image software. The void formation mechanism is then discussed along with the wafer bonding dynamics at room temperature.
The following article is
Open access
Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications
Alain E. Kaloyeros
et al
2017
ECS J. Solid State Sci. Technol.
P691
View article
, Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications
PDF
, Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications
This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiN
:H and SiN
:H(C)) and non-hydrogenated (SiN
and SiN
(C)) forms. The emphasis is on emerging trends and innovations in these SiN
material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiN
and its SiN
(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.
The following article is
Open access
Origin and Innovations of CMP Slurry
Hitoshi Morinaga 2024
ECS J. Solid State Sci. Technol.
13
074006
View article
, Origin and Innovations of CMP Slurry
PDF
, Origin and Innovations of CMP Slurry
This paper reviews how today’s CMP (Chemical Mechanical Polishing) slurries have been innovated and explores ideas for driving further evolution. In early semiconductor polishing, Mechanical Polishing was used, focusing on controlling abrasive particle sizes, leading to the use of alumina abrasives via wet classification. As materials shifted from germanium to silicon and applications transitioned from radios to integrated circuits, research was conducted on the material and size of abrasives to improve polishing accuracy, and silica was finally adopted. Subsequently, in pursuit of higher purity, ultrapure colloidal silica using organic raw materials was introduced in 1985 and became the standard in current semiconductor CMP. The first report on CMP dates back to Schmidt’s 1962 paper. Although the report was based on visual inspection, the approach was validated to be reasonable with today’s inspection technology. CMP achieved further defect reduction by integrating with Clean Technology. Throughout its history, polishing consistently pursued uniform action on surfaces, driving contaminant reduction, and occasionally achieving significant breakthroughs through the combination of diverse technologies. Innovations are born when disparate technologies, evolving independently until a certain point, interact and combine according to market needs.
The following article is
Open access
A Review on the Fabrication and Manufacturing Processes of All-Solid-State Batteries From Laboratory Research to Industrial Scale-Up
Han Cui and Shaofeng Kong 2026
ECS J. Solid State Sci. Technol.
15
033006
View article
, A Review on the Fabrication and Manufacturing Processes of All-Solid-State Batteries From Laboratory Research to Industrial Scale-Up
PDF
, A Review on the Fabrication and Manufacturing Processes of All-Solid-State Batteries From Laboratory Research to Industrial Scale-Up
With the advancement of electric vehicle (EV) battery technologies, conventional lithium-ion batteries are approaching their theoretical energy density limits while facing persistent safety concerns. All-solid-state batteries (ASSBs) offer a pathway toward higher energy density and enhanced safety. This review focuses on the fabrication and manufacturing processes of ASSBs, explicitly bridging laboratory-scale research methods with emerging industrial-scale production routes. Emphasis is placed on material systems, scalable processing strategies, manufacturing bottlenecks, and industrial roadmaps.
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The following article is
Open access
Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
J. Müller
et al
2015
ECS J. Solid State Sci. Technol.
N30
View article
, Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
PDF
, Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
Bound to complex perovskite systems, ferroelectric random access memory (FRAM) suffers from limited CMOS-compatibility and faces severe scaling issues in today's and future technology nodes. Nevertheless, compared to its current-driven non-volatile memory contenders, the field-driven FRAM excels in terms of low voltage operation and power consumption and therewith has managed to claim embedded as well as stand-alone niche markets. However, in order to overcome this restricted field of application, a material innovation is needed. With the ability to engineer ferroelectricity in HfO
, a high-k dielectric well established in memory and logic devices, a new material choice for improved manufacturability and scalability of future 1T and 1T-1C ferroelectric memories has emerged. This paper reviews the recent progress in this emerging field and critically assesses its current and future potential. Suitable memory concepts as well as new applications will be proposed accordingly. Moreover, an empirical description of the ferroelectric stabilization in HfO
will be given, from which additional dopants as well as alternative stabilization mechanism for this phenomenon can be derived.
Rutile TiO
-Reinforced PVDF Nanocomposites: A Study on Structure, Optics, and Piezoresponse Performance for Energy-Harvesting Devices
Krishna Tewatia
et al
2026
ECS J. Solid State Sci. Technol.
15
043004
View article
, Rutile TiO2-Reinforced PVDF Nanocomposites: A Study on Structure, Optics, and Piezoresponse Performance for Energy-Harvesting Devices
PDF
, Rutile TiO2-Reinforced PVDF Nanocomposites: A Study on Structure, Optics, and Piezoresponse Performance for Energy-Harvesting Devices
Polyvinylidene fluoride (PVDF) has attracted significant attention for the fabrication of nanogenerator devices due to its remarkable flexibility, chemical compatibility, and long-term durability. However, its inherently low piezoelectric response compared to ceramic materials necessitates the incorporation of nanofillers to enhance its functional properties. In this work, rutile-phase titanium dioxide (R-TiO
) nanoparticles were incorporated into a PVDF matrix at various weight percentages using the solution-casting technique. The resulting nanocomposite films (NCFs) were systematically characterized to evaluate their structural, optical, and piezoelectric properties. Incorporating metal oxide notably enhanced the electroactive
-phase content, dielectric constant, electrical conductivity, and remanent polarization of the nanocomposite materials. The beta phase fraction reached a maximum of 77% at 2.4 wt% filler loading. The dielectric constant and electrical conductivity showed enhancements of approximately threefold and fivefold, respectively. At 2.4 wt% R-TiO
, the remanent polarization exhibited a remarkable tenfold improvement, accompanied by a twofold increase in the coercive field. Additionally, the output voltage produced under mechanical stress demonstrated a fivefold increase at a 2.4 wt% filler concentration, emphasizing the significant promise of these nanocomposites for advanced pressure-sensing applications.
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Tungsten Doped Calcium Vanadate Glass Cathodes in Aqueous Zn Ion Batteries
Kriti and Atul Khanna 2026
ECS J. Solid State Sci. Technol.
15
043003
View article
, Tungsten Doped Calcium Vanadate Glass Cathodes in Aqueous Zn Ion Batteries
PDF
, Tungsten Doped Calcium Vanadate Glass Cathodes in Aqueous Zn Ion Batteries
Calcium vanadate glasses with and without tungsten ion doping, and of the system: xCaO-(100-x-y)V
-yWO
(x = 25, 30 & 35 mol% and y = 0 and 5 mol%) are synthesized by splat quenching and used as cathodes in rechargeable aqueous zinc ion cells. Glasses are characterized by Raman spectroscopy, X-ray diffraction, differential scanning calorimetry, temperature dependent dc electrical conductivity and electrochemical studies. The glass transition temperature of the samples is in the range: 259 °C–290 °C and dc conductivity in the range: 4.8(1) × 10
–7
–1.8(1) × 10
–8
S‧cm
−1
at 303 K. The electrical conductivity and the glass transition temperature of calcium vanadate glasses enhance significantly with the incorporation of W ions. The Raman spectra of vanadate glasses show broad band at 652 cm
−1
due to stretching vibrations of doubly coordinated oxygen (V
-O) units and a peak at 894 cm
−1
due to the symmetric stretching vibrations of O–V–O bonds in VO
units. The rechargeable cells of the configuration: //Zn(anode)/1 M ZnSO
(aq)/Calcium Vanadate(cathode)/Ni-foam// are prepared which generate an open circuit voltage of 1.4(1) V and could power light emitting diodes for several hours. Calcium vanadate glasses are found to be promising cathode materials for applications in aqueous zinc ion batteries.
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Impact of BaO and ZnO Concentrations on the Physical, Mechanical, Structural, and Gamma-Ray Shielding Properties of B
-CaO-Na
O-ZnO-BaO Glasses
Aljawhara H. Almuqrin
et al
2026
ECS J. Solid State Sci. Technol.
15
043002
View article
, Impact of BaO and ZnO Concentrations on the Physical, Mechanical, Structural, and Gamma-Ray Shielding Properties of B2O3-CaO-Na2O-ZnO-BaO Glasses
PDF
, Impact of BaO and ZnO Concentrations on the Physical, Mechanical, Structural, and Gamma-Ray Shielding Properties of B2O3-CaO-Na2O-ZnO-BaO Glasses
The use of transparent, and lead-free shielding materials is very important for safety in nuclear and medical environments. The present glasses offer excellent transparency and formability, optimizing their structural stability and photon attenuation properties. The introduction of BaO/ZnO into borate glasses increases the density (
) from 2.849 to 3.811 gcm
−3
. Correspondingly, the molar mass (M) increases, while the molar volume (V
) decreases, indicating a more tightly packed glass matrix. The ion concentration increases (N) and related properties such as polaron radius (r
) and interionic distance (r
) decrease, further compacting the network and improving its structural integrity. The elastic moduli increase, as BaO/ZnO content increases. The shielding properties have been investigated from 0.122 to 0.678 MeV. The comparison of half value layer (HVL) with other shielding glasses confirms that Zn20Ba20 glass has good attenuation performance.
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Highlights
Density increases to 3.811 g cm
−3
; BaO/ZnO creates a more compact network.
Higher BaO/ZnO content boosts elastic moduli and hardness.
FTIR confirms structural shifts from trigonal BO3 to tetrahedral BO4 units.
Zn20Ba20 hits highest Zeff (28.78) and lowest HVL (0.325 cm) at 0.122 MeV.
Zn20Ba20 glasses outperform several standard shielding glasses.
Low Metal-GaN Contact Resistance via n
−Region Formation Facilitated by SiN-Capped High Si Doping
Yoshiteru Amemiya
et al
2026
ECS J. Solid State Sci. Technol.
15
045001
View article
, Low Metal-GaN Contact Resistance via n+−Region Formation Facilitated by SiN-Capped High Si Doping
PDF
, Low Metal-GaN Contact Resistance via n+−Region Formation Facilitated by SiN-Capped High Si Doping
Low metal-semiconductor contact resistance can be realized via real ohmic contacts or low tunnel-barrier Schottky contacts. In gallium nitride (GaN)-based devices, alloying GaN and metals, such as Ti, Al and Au, is employed as a strategy for realizing metal-GaN ohmic contacts. In this study, ohmic-like contact is realized by thinning the tunnel barrier via the formation of a highly Si-doped n-GaN region. The sheet resistance (R
sh
), which is linked to carrier density and contact resistivity, is influenced by the cap layers deployed for sacrificial layers of ion implantation and activation annealing. To evaluate contact resistivity using transfer length method (TLM) patterning, the silicon nitride (SiN) cap layer is selected for realizing low R
sh
of n-GaN layer. At high doping concentrations and activation-annealing temperatures, the GaN and SiN layers react to form reaction products. Thereafter, the dose and temperature are set to 3.0 × 10
15
cm
−2
and 1100 °C, respectively. Under these conditions, the estimated carrier density at the GaN surface is 3.9 × 10
20
cm
−3
, confirming the formation of the n
-GaN region. The subsequent measurements of the fabricated TLM pattern using Au-free Ti/Al electrodes confirm the realization of ohmic-like behavior at a low post-metallization-annealing temperature of 450 °C, yielding a low contact resistivity of 6.6 × 10
−6
Ωcm
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Broad Energy Range Theoretical Evaluation of Radiation Shielding in Lead Bismuth Borate Glasses
Albandari W. Alrowaily
et al
2026
ECS J. Solid State Sci. Technol.
15
043001
View article
, Broad Energy Range Theoretical Evaluation of Radiation Shielding in Lead Bismuth Borate Glasses
PDF
, Broad Energy Range Theoretical Evaluation of Radiation Shielding in Lead Bismuth Borate Glasses
The Phy-X software facilitated the exploration of lead bismuth borate glasses’ radiation shielding performance when doped with different Gd
content in the wide 0.015–15 MeV energy range. The effective atomic number (Z
eff
) and LAC were progressively increased with greater BaO, PbO
, and Gd
content. The glasses’ Z
eff
values had significant dependence on the radiation energy, since the Z
eff
changed rapidly with increased energy and in the low energy range this change was very notable. The high density sample (coded as Gd3) had the lowest half-value layer (HVL), indicating this glass sample as possessing the maximum shielding effect. The prepared glasses’ HVL values were compared with additional glasses at 0.5 MeV, whereby the values of all the glass samples in this study were lower than the compared CaF
-BaO-P
and BaO-Li
O-B
glasses.
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The following article is
Open access
A Review on the Fabrication and Manufacturing Processes of All-Solid-State Batteries From Laboratory Research to Industrial Scale-Up
Han Cui and Shaofeng Kong 2026
ECS J. Solid State Sci. Technol.
15
033006
View article
, A Review on the Fabrication and Manufacturing Processes of All-Solid-State Batteries From Laboratory Research to Industrial Scale-Up
PDF
, A Review on the Fabrication and Manufacturing Processes of All-Solid-State Batteries From Laboratory Research to Industrial Scale-Up
With the advancement of electric vehicle (EV) battery technologies, conventional lithium-ion batteries are approaching their theoretical energy density limits while facing persistent safety concerns. All-solid-state batteries (ASSBs) offer a pathway toward higher energy density and enhanced safety. This review focuses on the fabrication and manufacturing processes of ASSBs, explicitly bridging laboratory-scale research methods with emerging industrial-scale production routes. Emphasis is placed on material systems, scalable processing strategies, manufacturing bottlenecks, and industrial roadmaps.
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Graphene as a Biomedical Material: Potentials and Perspectives
Priyanka Mahajan
et al
2026
ECS J. Solid State Sci. Technol.
15
011002
View article
, Graphene as a Biomedical Material: Potentials and Perspectives
PDF
, Graphene as a Biomedical Material: Potentials and Perspectives
Biomedical procedures needed to be upgraded with time through various innovative techniques in order to enhance its efficacy. Graphene’s transformative potential in biomedicine owing to its unique physicochemical properties provides innovative platform in this regard. The current review begins with highlights on key attributes of graphene such as biocompatibility, surface functionalization potential, mechanical strength, and electrical/thermal conductivity. Further emphasis has been given to the graphene’s diverse roles, including nanocarriers for drug delivery, stimuli-responsive and targeted therapeutic strategies, biosensors for biomarker detection and their integration into wearable devices, and significant contributions to tissue engineering as well as regenerative medicine through scaffolds. Besides, its applications in bioimaging (MRI, fluorescence) and photothermal/photodynamic therapies are also discussed. Later part of review involves in vitro/in vivo biocompatibility and dose-dependent toxicity of graphene. Conclusively, the major challenges obstructing graphene-derivatives in biomedical applications are highlighted along with possible measures. Integration with emerging trends like AI and ML- empowered devices can underscore graphene’s promising role in next-generation biomedical platforms.
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Nanomaterial-Engineered Solid-State Sensors: Advances in Metal Oxides, MXenes, and Sustainable Electronics
Prachi Palta
et al
2025
ECS J. Solid State Sci. Technol.
14
127002
View article
, Nanomaterial-Engineered Solid-State Sensors: Advances in Metal Oxides, MXenes, and Sustainable Electronics
PDF
, Nanomaterial-Engineered Solid-State Sensors: Advances in Metal Oxides, MXenes, and Sustainable Electronics
Recent developments in nano-materials have re-architected the frontiers of solid-state sensor design, enabling high sensitivity, selectivity, and sustainability across a broad spectrum of real-world applications. This review summarises the advances in nanomaterial-engineered sensors, including the connection between material structure and functional mechanisms, as well as the device’s performance. Doped metal-oxide semiconductors (SnO
or ZnO, or WO
) or polyoxometalates or MXenes exhibit an improved speed of charge transfer, low temperatures, and selectivity. Hydrophilic polymers, biocomposites and MXene hybrid sensors based on impedance and ionic humidity are flexible, fast-reactive and self-powered. Piezoelectric and photoacoustic transduction, based on ferroelectric ceramics, PVDF, and bio-based polymers such as PLA, chitosan, and cellulose, provides a platform for sustainable and energy-harvesting wearable devices and implants. The combination of electrochemical materials and biodegradable materials also enhances environmentally friendly sensor technologies. Multimodal sensing is adopting new architectures developed using adaptive calibration and intelligent data interpretation based on new artificial intelligence. As observed in the review, the compositional tuning, heterostructuring, and nanoscale morphology are used to control the science of bridge materials and the engineering of functional devices. The vision for this area is to develop fully autonomous, power-driven, and recyclable sensor ecosystems that can seamlessly integrate into Internet of Things (IoT) networks, enabling continuous monitoring of the environment, health, and industrial status with minimal human intervention and environmental impact. Lastly, the existing challenges, such as interference from humidity, signal drift, and the possibility of large-scale manufacturability, are not only documented but also addressed through the opportunities presented by multifunctional sensor systems, autonomous sensor systems, and recyclable sensor systems of the future. Future developmental trends include the integration of machine learning algorithms with multimodal sensor arrays to provide real-time adaptive analytics, the development of biodegradable and bioresorbable platforms for transient implantable diagnostics, and the development of flexible, skin-conformal architectures for precision medicine and personalized wearable health monitoring. This comprehensive evaluation offers a unique perspective on how nanomaterial-engineered solid-state sensors can be utilized to support the development of next-generation, sustainable, and intelligent technologies.
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A Review of Zinc Stannate (Zn
SnO
) Resistive Gas Sensors
R. Dhahri
et al
2025
ECS J. Solid State Sci. Technol.
14
097006
View article
, A Review of Zinc Stannate (Zn2SnO4) Resistive Gas Sensors
PDF
, A Review of Zinc Stannate (Zn2SnO4) Resistive Gas Sensors
Resistive gas sensors are widely utilized to detect a variety of gases including poisonous, explosive, biomarker, and even non-toxic gases because of their exceptional performance. Zinc stannate (Zn
SnO
) is a ternary metal oxide with exceptional stability and distinctive electrical characteristics. In a variety of morphologies and along with other materials, it has been utilized to realize resistive gas sensors. Here, we thoroughly explain the gas sensing characteristics of Zn
SnO
gas sensors in pristine, doped, and composite forms. Also, we have emphasized in sensing mechanism to further understand the gas sensing principle of Zn
SnO
gas sensors.
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Research Progress on the Application of Cerium Oxide and Titanium Oxide Abrasives Modification in Chemical Mechanical Polishing
Ruochong Gu
et al
2025
ECS J. Solid State Sci. Technol.
14
094001
View article
, Research Progress on the Application of Cerium Oxide and Titanium Oxide Abrasives Modification in Chemical Mechanical Polishing
PDF
, Research Progress on the Application of Cerium Oxide and Titanium Oxide Abrasives Modification in Chemical Mechanical Polishing
In chemical mechanical polishing (CMP), abrasives are the primary factors determining polishing performance. To achieve high-precision polishing results with a controlled material removal rate (MRR) and minimized surface defects, increasingly stringent demands are placed on abrasive characteristics, including particle size, hardness, morphology, and chemical stability. As a result, the research and development of modified abrasives have become critical for enhancing polishing performance. This paper systematically summarizes the progress of research in abrasive modification over recent years to improve polishing results, focusing on the mechanisms of action and polishing performance of CeO
and TiO
abrasives. It is concluded that modified CeO
abrasives (such as core–shell structured abrasives, rare Earth element-doped abrasives, and mixed abrasives) exhibit excellent polishing effects by improving their original physicochemical properties or integrating with the properties of other abrasives. Furthermore, in photocatalysis-assisted chemical mechanical polishing (PCMP), modified TiO
abrasives generally generate highly oxidizing hydroxyl radicals (·OH), which exhibit advantages for the processing difficulty of third-generation semiconductors SiC and GaN. Looking ahead, research on modified abrasives will remain a top priority. The continuous optimization of abrasive properties is expected to lead to a more efficient and environmentally friendly semiconductor manufacturing process.
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Editors’ Choice—Structural, Electrical, and Luminescent Properties of Orthorhombic κ-Ga
Grown by Epitaxial Lateral Overgrowth
V. I. Nikolaev
et al
2023
ECS J. Solid State Sci. Technol.
12
115001
View article
, Editors’ Choice—Structural, Electrical, and Luminescent Properties of Orthorhombic κ-Ga2O3 Grown by Epitaxial Lateral Overgrowth
PDF
, Editors’ Choice—Structural, Electrical, and Luminescent Properties of Orthorhombic κ-Ga2O3 Grown by Epitaxial Lateral Overgrowth
The properties of orthorhombic κ-Ga
films grown by Epitaxial Lateral Overgrowth (ELOG) were studied by Scanning Transmission Electron Microscopy (STEM), X-ray diffraction, capacitance-voltage profiling, Microcathodoluminescence (MCL) spectroscopy and imaging. ELOG mask was formed by deposition of SiO
stripes on TiO
buffer prepared on basal plane sapphire, with the stripes going along the [11
0] direction of sapphire. κ-Ga
ELOG growth was performed using Halide Vapor Phase Epitaxy (HVPE), with ELOG wing of the structure formed by lateral overgrowth over the 20
m-wide SiO
stripes, while growth in between the stripes proceeded initially by vertical growth in the 5-
m-wide windows. TEM analysis showed that the material in the windows comprised 120
rotational nanodomains typical of κ-Ga
, while, in the wing regions, the material was single-domain monocrystalline. The films were conducting, with the net donor density close to 10
13
cm
−3
. The data suggested the material in the windows have much higher resistance than in the wings. MCL spectra and imaging revealed much higher density of nonradiative recombination centers in the windows than in the wings.
The following article is
Open access
Editors’ Choice—Atomic Layer Etching of Tungsten Disulfide Using Remote Plasma-Induced Oxidation and Wet Etching
Younghyun You
et al
2023
ECS J. Solid State Sci. Technol.
12
075009
View article
, Editors’ Choice—Atomic Layer Etching of Tungsten Disulfide Using Remote Plasma-Induced Oxidation and Wet Etching
PDF
, Editors’ Choice—Atomic Layer Etching of Tungsten Disulfide Using Remote Plasma-Induced Oxidation and Wet Etching
WS
is an emerging semiconductor with potential applications in next-generation device architecture owing to its excellent electrical and physical properties. However, the presence of inevitable surface contaminants and oxide layers limits the performance of WS
-based field-effect transistors (FETs); therefore, novel methods are required to restore the pristine WS
surface. In this study, the thickness of a WS
layer was adjusted and its surface was restored to a pristine state by fabricating a recessed-channel structure through a combination of self-limiting remote plasma oxidation and KOH solution etching processes. The reaction between the KOH solution and WO
enabled layer-by-layer thickness control as the topmost oxide layer was selectively removed during the wet-etching process. The thickness of the WS
layer decreased linearly with the number of recess cycles, and the vertical etch rate was estimated to be approximately 0.65 nm cycle
−1
. Micro-Raman spectroscopy and high-resolution transmission electron microscopy revealed that the layer-by-layer etching process had a nominal effect on the crystallinity of the underlying WS
channel. Finally, the pristine state was recovered by removing ambient molecules and oxide layers from the surface of the WS
channel, which resulted in a high-performance FET with a current on/off ratio greater than 10
. This method, which provides a facile approach to restoring the pristine surfaces of transition-metal dichalcogenide (TMDC) semiconductors with precise thickness control, has potential applications in various fields such as TMDC-based (opto)electronic and sensor devices.
The following article is
Open access
Editors’ Choice—Thin Film Transistor Response in the THz Range
M. S. Shur
et al
2023
ECS J. Solid State Sci. Technol.
12
035008
View article
, Editors’ Choice—Thin Film Transistor Response in the THz Range
PDF
, Editors’ Choice—Thin Film Transistor Response in the THz Range
Novel metal oxide materials such as InGaZnO (IGZO), ZnO, SnO, and In
and improved fabrication processes dramatically enhanced the achieved and projected thin film transistor (TFT) performance. The record values of the effective field-effect mobility of Metal Oxide TFT (MOTFT) materials have approached 150 cm
/Vs. We report on an improved compact TFT model based on three models: the RPI TFT model, the unified charge control model (UCCM), and the multi-segment TFT compact model. This improved model accounts for a non-exponential slope in the subthreshold regime by introducing a varying subthreshold slope and accounts for non-trivial capacitance dependence on the gate bias, and parasitic impedances. The analysis of the TFT response using this model and the analytical calculations showed that TFTs could have a significant response to impinging THz and sub-THz radiation. Using a complementary inverter and the phase-matched THz signal feeding significantly improves the detection sensitivity.
The following article is
Open access
Editors’ Choice—Vibrational Properties of Oxygen-Hydrogen Centers in H
- and D
-Implanted Ga
Amanda Portoff
et al
2020
ECS J. Solid State Sci. Technol.
125006
View article
, Editors’ Choice—Vibrational Properties of Oxygen-Hydrogen Centers in H+- and D+-Implanted Ga2O3
PDF
, Editors’ Choice—Vibrational Properties of Oxygen-Hydrogen Centers in H+- and D+-Implanted Ga2O3
The ion implantation of H
and D
into Ga
produces several O–H and O–D centers that have been investigated by vibrational spectroscopy. These defects include the dominant V
Ga(1)
-2H and V
Ga(1)
-2D centers studied previously along with additional defects that can be converted into this structure by thermal annealing. The polarization dependence of the spectra has also been analyzed to determine the directions of the transition moments of the defects and to provide information about defect structure. Our experimental results show that the implantation of H
(or D
) into Ga
produces two classes of defects with different polarization properties. Theory finds that these O–H (or O–D) centers are based on two shifted configurations of a Ga(1) vacancy that trap H (or D) atom(s). The interaction of V
Ga(1)
-nD centers with other defects in the implanted samples has also been investigated to help explain the number of O–D lines seen and their reactions upon annealing. Hydrogenated divacancy V
Ga(1)
-V
centers have been considered as an example.
The following article is
Open access
Editors’ Choice—Precipitation of Suboxides in Silicon, their Role in Gettering of Copper Impurities and Carrier Recombination
G. Kissinger
et al
2020
ECS J. Solid State Sci. Technol.
064002
View article
, Editors’ Choice—Precipitation of Suboxides in Silicon, their Role in Gettering of Copper Impurities and Carrier Recombination
PDF
, Editors’ Choice—Precipitation of Suboxides in Silicon, their Role in Gettering of Copper Impurities and Carrier Recombination
This paper describes a theoretical investigation of the phase composition of oxide precipitates and the corresponding emission of self-interstitials at the minimum of the free energy and their evolution with increasing number of oxygen atoms in the precipitates. The results can explain the compositional evolution of oxide precipitates and the role of self-interstitials therein. The formation of suboxides at the edges of SiO
precipitates after reaching a critical size can explain several phenomena like gettering of Cu by segregation to the suboxide region and lifetime reduction by recombination of minority carriers in the suboxide. It provides an alternative explanation, based on minimized free energy, to the theory of strained and unstrained plates. A second emphasis was payed to the evolution of the morphology of oxide precipitates. Based on the comparison with results from scanning transmission electron microscopy the sequence of morphology evolution of oxide precipitates was deduced. It turned out that it is opposite to the sequence assumed until now.
Electron Beam Induced Current Studies of Defects Generated by Soft Breakdown of Ga2O3 Schottky Diodes
Yakimov et al
View accepted manuscript
, Electron Beam Induced Current Studies of Defects Generated by Soft Breakdown of Ga2O3 Schottky Diodes
PDF
, Electron Beam Induced Current Studies of Defects Generated by Soft Breakdown of Ga2O3 Schottky Diodes
Electron Beam Induced Current (EBIC) mapping of Ga2O3 Schottky diodes after soft breakdown reveal the presence of defects with bright contrast absent before the breakdown. The defects are of two types: smaller point-like defect features with weaker contrast and larger (about 1 m) defects with a very strong EBIC contrast. For both types of defects a prominent gain of the EBIC signal compared to the signal expected for theoretically estimated value based on the assumption of total collection of charge of electrons and holes generated by the probing beam was observed. For point-like defects the gain was on the order of 100, with the time of gain-build-up lower than 5 μs and the time of gain decay of 15 μs. For the “strong” defects the gain was very high, on the order of 104, with the gain build-up time also below 5 μs, while the gain decay time was slightly longer than for point-like defects (20-25 μs). The appearance of the defects in EBIC images correlates with the recently reported localized enhancement of the signal due to traps with levels close to 0.75 eV and 1 eV below the conduction band.
Molecular Engineering of Voltage-Stabilizer Grafting Polydimethylsiloxane for Superior Electrical Insulation and Environmental Stability
Liu et al
View accepted manuscript
, Molecular Engineering of Voltage-Stabilizer Grafting Polydimethylsiloxane for Superior Electrical Insulation and Environmental Stability
PDF
, Molecular Engineering of Voltage-Stabilizer Grafting Polydimethylsiloxane for Superior Electrical Insulation and Environmental Stability
The present theoretical study represents molecular simulation insights to a chemical modification of polyisobutylene (PDMS) by grafting a functional molecule (MB) as the voltage stabilizer for ameliorating electrical insulation performance, oxygen resistance, and thermal stability of the PDMS material applied in power insulator or transformer. It is demonstrated by first-principles calculations that chemical-grafting MB can introduce multiple deep electron traps and electron-hole recombination center into PDMS macromolecule for inhibiting charge transport and restrict hot charge carrier production. Combined molecular dynamics and Monte Carlo simulations reveal that chemical grafting MB onto PDMS backbone promotes denser segmental coalescence and diminishes compatibility with molecular oxygen of PDMS macromolecule, attributed to the significantly enhanced dipole moments from the grafted moieties. Consequently, this molecular engineering strategy effectively suppresses oxygen permeation and enhances thermal stability of PDMS material. First-principles reaction pathway analysis reveals that MB grafting promotes oxidative stability in PDMS, precluding potential degradation mechanisms. The ameliorated abilities of charge trapping and withstanding high temperatures together with the enhanced resistances to oxygen infiltration and oxidation in PDMS material, as proposed and elucidated on molecular-scale in this study, represent a theoretical foundation and technological strategy for developing advanced polymer dielectrics applied in harsh environments.
Na3V2(PO4)3 Anchoring on Carbon Spheres with Promoted Electrical Conductivity and Electrochemical Performance in Zn-ion Storage
Mo et al
View accepted manuscript
, Na3V2(PO4)3 Anchoring on Carbon Spheres with Promoted Electrical Conductivity and Electrochemical Performance in Zn-ion Storage
PDF
, Na3V2(PO4)3 Anchoring on Carbon Spheres with Promoted Electrical Conductivity and Electrochemical Performance in Zn-ion Storage
NASICON-type Na3V2(PO4)3 (NVP) is considered a promising cathode material for aqueous zinc-ion batteries due to its high operating voltage and substantial specific capacity. However, its practical application is significantly limited by poor electronic conductivity. To solve this problem, this paper introduces a carbon sphere framework supporting carbon-coated NVP (denoted as NVP-C@CSs). This composite was synthesized via a combination of hydrothermal and high-temperature calcination methods, which simultaneously improve conductivity and zinc storage capacity. The results indicate that the crystal structure of NVP remains intact after the introduction of CSs. Benefiting from the conductive CS framework, the NVP-C@CSs composite exhibits enhanced electronic conductivity (1.60 × 10⁻⁴ vs. 1.20 × 10⁻⁴ S cm⁻¹) and consequently superior electrochemical performance. At a low current density of 100 mA g⁻¹, the NVP-C@CSs composite delivers a discharge specific capacity of 126 mAh g⁻¹, higher than that of the NVP-C material (113 mAh g⁻¹). The composite also exhibits excellent rate capability, with a capacity of 90 mAh g⁻¹ at 2000 mA g⁻¹, significantly exceeding that of NVP-C (59 mAh g⁻¹). This work provides an efficient approach to developing high-performance NVP composites for zinc-ion batteries.
Highly Selective Electroless-Deposited Co Passivation Layer with Boric Acid on Cu/SiO2 Surfaces for Cu-Cu Bonding
Shao et al
View accepted manuscript
, Highly Selective Electroless-Deposited Co Passivation Layer with Boric Acid on Cu/SiO2 Surfaces for Cu-Cu Bonding
PDF
, Highly Selective Electroless-Deposited Co Passivation Layer with Boric Acid on Cu/SiO2 Surfaces for Cu-Cu Bonding
Selective electroless-deposited (ELD) passivation layer bonding is an advanced process known by low process complexity and low cost, which can effectively reduce the bonding temperature. However, a pressing issue is that metal particles from the process tend to deposit on the dielectric layer, thereby compromising reliability. By optimizing the boric acid (H3BO3) concentration to 96 mM, we achieved highly selective ELD Co films on Cu/SiO2 surfaces, effectively suppressing Co adsorption and particle formation on SiO2 while maintaining the deposition rate on Cu. Mechanistic studies, including contact angle measurements and Density Functional Theory calculations, revealed that the enhanced selectivity originated from the dissociative adsorption of H3BO3 on SiO2. This process passivated the surface by saturating dangling oxygen bonds, thereby inhibiting Co adsorption. We successfully demonstrated the application of this selective deposition in bonding technology, achieving Co-passivated layer bonding at 250 °C. Remarkably, after formic acid treatment, the bonding samples exhibited specific contact resistance comparable to those achieved with physical vapor deposition Co, highlighting the potential of this low-cost wet process for advanced interconnect fabrication.
Enhancement of InGaN Laser Photovoltaic Cell Performance with InGaN Quantum Structures as Stress Relief Layers
Shan et al
View accepted manuscript
, Enhancement of InGaN Laser Photovoltaic Cell Performance with InGaN Quantum Structures as Stress Relief Layers
PDF
, Enhancement of InGaN Laser Photovoltaic Cell Performance with InGaN Quantum Structures as Stress Relief Layers
This paper employs metal-organic chemical vapor deposition to grow a stress relieved InGaN laser cell with an InGaN quantum structure on a sapphire substrate, achieving a photovoltaic conversion efficiency of 11.76%. Through testing and characterization of the optical properties of InGaN materials, it found that compared with conventional structures, the surface roughness of materials containing stress relief layer with InGaN quantum structures increased by 21.1%, and absorption rate increased by 63.98%. However, the full width at half maximum, dislocation density and relaxation degree of the active region decreased by 23.29%, 46.63%, and 54.04%, respectively. Meanwhile, compared to conventional laser cells, its conversion efficiency increased by 3.51 times under 450nm laser irradiation. Therefore, both the decrease in dislocation density and the improvement in absorption rate of the InGaN material with stress relief layer with InGaN quantum structures are the primary reasons for enhancing the device's conversion efficiency. In summary, this study provides reliable experimental support for the preparation of highly efficient InGaN laser cells.
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Structural and Electrochemical Improvements in Sodium Acetate Doped iota-Carrageenan Solid Polymer Electrolytes for Energy Storage Applications
Sandeep Shetty B
et al
2026
ECS J. Solid State Sci. Technol.
View article
, Structural and Electrochemical Improvements in Sodium Acetate Doped iota-Carrageenan Solid Polymer Electrolytes for Energy Storage Applications
PDF
, Structural and Electrochemical Improvements in Sodium Acetate Doped iota-Carrageenan Solid Polymer Electrolytes for Energy Storage Applications
The growing need for environmentally responsible, safe, and resource-efficient energy storage materials has driven interest in biodegradable polymer electrolytes. This work reports the design and evaluation of an eco-friendly solid polymer electrolyte (SPE) derived from iota carrageenan (IC) doped with sodium acetate (CH₃COONa). Films were prepared through a cost-efficient solution casting method. FTIR analysis verified successful polymer–salt complexation, indicated by notable shifts in characteristic functional groups. XRD patterns revealed a gradual reduction in crystallinity with increasing salt content, enhancing the amorphous phase that supports efficient ion mobility. Electrochemical Impedance Spectroscopy confirmed that the film containing 30 wt% CH₃COONa achieved the highest ionic conductivity of 1.93 × 10-5 S cm-1 at ambient temperature. The electrolyte also exhibited a broad electrochemical stability window of 3.6 V. A primary sodium-ion cell assembled with the optimized SPE delivered a stable open-circuit voltage of ~2.9 V, highlighting its promise for clean, resilient, and sustainable energy technologies.
The following article is
Open access
A Review on the Fabrication and Manufacturing Processes of All-Solid-State Batteries From Laboratory Research to Industrial Scale-Up
Han Cui and Shaofeng Kong 2026
ECS J. Solid State Sci. Technol.
15
033006
View article
, A Review on the Fabrication and Manufacturing Processes of All-Solid-State Batteries From Laboratory Research to Industrial Scale-Up
PDF
, A Review on the Fabrication and Manufacturing Processes of All-Solid-State Batteries From Laboratory Research to Industrial Scale-Up
With the advancement of electric vehicle (EV) battery technologies, conventional lithium-ion batteries are approaching their theoretical energy density limits while facing persistent safety concerns. All-solid-state batteries (ASSBs) offer a pathway toward higher energy density and enhanced safety. This review focuses on the fabrication and manufacturing processes of ASSBs, explicitly bridging laboratory-scale research methods with emerging industrial-scale production routes. Emphasis is placed on material systems, scalable processing strategies, manufacturing bottlenecks, and industrial roadmaps.
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Luminescence Properties of Eu-Doped Silicon (Oxy)carbonitride Thin Films Fabricated by ECR-PECVD and Magnetron Sputtering
Fahmida Azmi and Peter Mascher 2026
ECS J. Solid State Sci. Technol.
15
036002
View article
, Luminescence Properties of Eu-Doped Silicon (Oxy)carbonitride Thin Films Fabricated by ECR-PECVD and Magnetron Sputtering
PDF
, Luminescence Properties of Eu-Doped Silicon (Oxy)carbonitride Thin Films Fabricated by ECR-PECVD and Magnetron Sputtering
Europium doped silicon (oxy)carbonitride (Si(O)CN) thin films were fabricated using an integrated electron cyclotron resonance plasma-enhanced chemical vapor deposition system combined with in situ magnetron sputtering. Post-deposition annealing was performed from 800 °C to 1200 °C to investigate europium activation within the Si(O)CN matrix. Room-temperature photoluminescence revealed visible bright red emission attributed to the intra 4 f transition of Eu
3+
ions, prominently observed in films annealed at 1100 °C and 1200 °C. A detailed compositional analysis was performed with a combination of Rutherford backscattering spectrometry and elastic recoil detection analysis showing nearly 7 at% of europium in the luminescent film. The presence of crystalline phases from the high temperature annealed samples was confirmed by X-ray diffraction analysis. These investigations were conducted to assess the feasibility of amorphous Si(O)CN as a thermally and chemically stable, silicon-compatible host for rare-Earth doping. Europium doped Si(O)CN can offer promising potential for visible light emission in next generation integrated photonic and optoelectronic devices.
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High-Efficiency Novel Bifacial CZT
1−x
Se Photovoltaic Cells: A Comprehensive Numerical Design for Dual Indoor-Outdoor Energy Harvesting
Rim Haji
et al
2026
ECS J. Solid State Sci. Technol.
15
035001
View article
, High-Efficiency Novel Bifacial CZT1−xGxSe Photovoltaic Cells: A Comprehensive Numerical Design for Dual Indoor-Outdoor Energy Harvesting
PDF
, High-Efficiency Novel Bifacial CZT1−xGxSe Photovoltaic Cells: A Comprehensive Numerical Design for Dual Indoor-Outdoor Energy Harvesting
Bifacial photovoltaic (PV) cells present a promising solution for enhanced energy harvesting in diverse environments, particularly for powering the proliferating network of low-energy Internet of Things (IoT) devices. This work details the numerical optimization of a novel bifacial cell based on a tunable CZT
1−x
Se absorber for dual indoor-outdoor applications. Using SCAPS-1D and RCWA simulations, the cell structure was systematically optimized by tuning key parameters, including germanium content, buffer layer, back contact, absorber properties, and an anti-reflection coating. The buffer layer material was selected to ensure optimal band alignment with the absorber, thereby minimizing non-radiative recombination. Meanwhile, the absorber thickness was optimized to balance photon absorption against the increase in series resistance. The cell’s performance was evaluated under 36 indoor wall colors and various outdoor ground albedos. Under indoor illumination, the optimized cell delivers an output power of 58.93 mW·cm
−2
(halogen) and 297 μW·cm
−2
(LED), sufficient to power a range of IoT sensors. Under outdoor AM1.5 G illumination, the output power ranges from 75.69 mW·cm
−2
(snow albedo) to 35.51 mW·cm
−2
(soil albedo). This study establishes a robust design framework for a versatile, high-efficiency PV cell, paving the way for sustainable power sources in smart buildings and embedded electronics.
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Impact of 10 MeV Proton Irradiation on the Electrical Characteristics of Diamond Schottky and Heterojunction Diodes
Hsiao-Hsuan Wan
et al
2026
ECS J. Solid State Sci. Technol.
15
035003
View article
, Impact of 10 MeV Proton Irradiation on the Electrical Characteristics of Diamond Schottky and Heterojunction Diodes
PDF
, Impact of 10 MeV Proton Irradiation on the Electrical Characteristics of Diamond Schottky and Heterojunction Diodes
The radiation tolerance of single-crystal diamond devices was investigated under 10 MeV proton irradiation. Schottky barrier diodes (SBDs) and ITO/diamond heterojunction diodes were fabricated on boron-doped diamond substrates with a 10 μm lightly doped drift layer and exposed to proton fluences from 1.0 × 10
13
to 1.6 × 10
14
cm
−2
. Irradiation induced increased on-resistance, reduced saturation current, and enhanced reverse leakage, with heterojunction devices showing greater degradation due to the vulnerability of the ITO layer and interface. Capacitance–voltage measurements revealed carrier removal rates of 171, 65, and 43 cm
−1
for fluences of 1.0 × 10
13
, 6.0 × 10
13
, and 1.6 × 10
14
cm
−2
, respectively, confirming diamond’s superior radiation hardness compared to Si, GaN, and Ga
. This resilience is attributed to diamond’s high atomic displacement energy, which limits lattice damage. These results demonstrate the potential of single-crystal diamond devices for radiation-hard power electronics and high-radiation environments.
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Enhanced Low-Temperature SWIR Sensing Using 1600 nm PbS Quantum Dots Thin-Film Phototransistors: A Comparison with 940 nm Devices
Ya-Hsiang Tai
et al
2026
ECS J. Solid State Sci. Technol.
15
027004
View article
, Enhanced Low-Temperature SWIR Sensing Using 1600 nm PbS Quantum Dots Thin-Film Phototransistors: A Comparison with 940 nm Devices
PDF
, Enhanced Low-Temperature SWIR Sensing Using 1600 nm PbS Quantum Dots Thin-Film Phototransistors: A Comparison with 940 nm Devices
This paper proposes a gap-type metal-semiconductor-metal (MSM) phototransistor architecture based on lead sulfide quantum dots (PbS QDs) for room-temperature infrared (IR) thermal sensing applications. Owing to their tunable bandgap, strong IR absorption, and simple fabrication, PbS QDs are promising candidates for low-cost photodetection. The devices with PbS QDs exhibiting peak absorptions at 940 and 1600 nm were fabricated and compared. The 1600 nm device demonstrated a lower detectable temperature threshold and a linear photocurrent–temperature response above 150 °C, whereas the 940 nm device required over 300 °C. The enhanced performance of the 1600 nm device arises from its narrower bandgap, enabling stronger IR absorption and higher responsivity. However, the larger QD size and higher defect density result in a slower total response time (13.21 s) compared with the 940 nm device (157 μs). Consequently, the 940 nm device is suitable for real-time monitoring of high-temperature objects, while the 1600 nm device is preferable for static or slowly varying thermal radiation. These findings highlight the potential of PbS QD–based gap-type MSM photodetectors to achieve extended room-temperature IR sensing without external cooling, providing a feasible approach for low-cost and uncooled thermal imaging applications.
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Demonstrating the Effects of Growth Temperatures of Al(In)GaN Back Barrier on Transport Properties of InAlGaN/GaN Heterostructures
Hoang-Tan-Ngoc Nguyen
et al
2026
ECS J. Solid State Sci. Technol.
15
014005
View article
, Demonstrating the Effects of Growth Temperatures of Al(In)GaN Back Barrier on Transport Properties of InAlGaN/GaN Heterostructures
PDF
, Demonstrating the Effects of Growth Temperatures of Al(In)GaN Back Barrier on Transport Properties of InAlGaN/GaN Heterostructures
The growth and optimization of Al(In)GaN back barrier by MOCVD for InAlGaN-based heterostructures is successfully demonstrated. At zero growth temperature gap (which was defined by ΔT
= ∣T
channel
-T
BB
∣), the coherent growth of the back barrier was confirmed by perfectly ordered atoms, sharp interface quality, and absence of threading dislocations at the buffer/back-barrier/channel interfaces, including the smoothest surface of heterostructures. The electron transport properties of InAlGaN/GaN heterostructures were consistently affected by the growth temperature of the back barrier. Significant increase of electron mobility from 1560 to 1740 (cm
Vs
−1
) and decrease of sheet carrier density from 1.57  ×  10
13
to 1.31  ×  10
13
(cm
−2
) were attributed to the improvement of electron confinement by adapting a thin ( 3.5 nm) optimized Al(In)GaN back barrier to the conventional InAlGaN/GaN heterostructure. XPS chemical shifts of the N1s core level and band alignment calculation have also confirmed the influence of the growth temperature of the back barrier on the electron confinement. Moreover, a large positive shift of the threshold voltage (2 V), a considerable increase in maximum transconductance from 180 to 216 (mS mm
−1
), and suppression of the Kink effect of the devices were realized, which paves the way for the employment of the Al(In)GaN back barrier for high-frequency applications.
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Effect of Schottky Metal Contacts on Barrier Heights of Vertical p-type Diamond Rectifiers, with an ITO/Diamond Heterojunction Benchmark
Hsiao-Hsuan Wan
et al
2026
ECS J. Solid State Sci. Technol.
15
015003
View article
, Effect of Schottky Metal Contacts on Barrier Heights of Vertical p-type Diamond Rectifiers, with an ITO/Diamond Heterojunction Benchmark
PDF
, Effect of Schottky Metal Contacts on Barrier Heights of Vertical p-type Diamond Rectifiers, with an ITO/Diamond Heterojunction Benchmark
Vertical p/p+ single-crystal diamond rectifiers were fabricated using a 5 μm boron-doped drift layer on a heavily doped substrate. We investigated the effect of different Schottky metal contacts (Ti, Ni, Cr, Pt, Au) on device performance, as well as use of an n-type indium tin oxide (ITO) layer to form a heterojunction. The Schottky barrier heights showed only a weak dependence on metal work function, consistent with significant Fermi-level pinning at the metal–diamond interface. Among the Schottky rectifiers, Ni/Au contacts demonstrated the best performance with low ideality factors (<1.1), good adhesion, and a maximum reverse breakdown voltage of 512 V. This resulted in an on-resistance (R
ON
) of 11 mΩ⋅cm
and a power figure-of-merit (FOM) of 21.8 MW cm
−2
. The ITO-diamond heterojunction rectifiers showed superior performance, achieving a breakdown voltage of 898 V with an on-resistance of 11 mΩ⋅cm
and a power FOM of 73.3 MW cm
−2
. Our results highlight the crucial role of interfacial engineering in maximizing the performance of diamond power devices and demonstrate their potential for high-power, high-voltage applications.
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Area-Selective Atomic Layer Deposition of Ruthenium on SiO
/W Patterns Using Silicon-Based Inhibitors
Gagi Tauhidur Rahman
et al
2026
ECS J. Solid State Sci. Technol.
15
014002
View article
, Area-Selective Atomic Layer Deposition of Ruthenium on SiO2/W Patterns Using Silicon-Based Inhibitors
PDF
, Area-Selective Atomic Layer Deposition of Ruthenium on SiO2/W Patterns Using Silicon-Based Inhibitors
Area-selective atomic layer deposition (AS-ALD) has garnered considerable interest over the past decade due to its potential to enable bottom-up fabrication of nanostructures with atomic-scale precision, eliminating the need for complex multiple patterning and lithographic processes that often introduce alignment challenges. Selective deposition is achieved by facilitating nucleation and growth on the targeted growth area (GA) while chemically passivating the non-growth area (NGA) to inhibit film formation. This study explores the inhibition performance of two small molecular inhibitors (SMIs) dimethylamino-trimethylsilane (DMATMS) and bis(dimethylamino)dimethylsilane (BDMADMS) were evaluated, for area-selective ALD (AS-ALD) of Ru on the surface consisted with SiO
and W using a carbonyl-based Ru precursor and O
as an oxidant at 250 °C. BDMADMS, applied via spin-coating and baking, enabled selective Ru deposition on W surfaces while effectively suppressing nucleation and deposition on SiO
surfaces for up to 500 ALD cycles, in contrast, DMATMS dip provided short-term inhibition, but Ru was later deposited on SiO
. We found that BDMADMS forms a stable inhibitor layer on SiO
, exhibiting strong chemical stability and effectively protecting the surface from oxidative environments, thereby preventing Ru deposition, while DMATMS forms a less stable inhibitor layer on SiO
, which degrades under oxidative conditions, leading to the loss of surface passivation and subsequent Ru deposition. Finally, optimized AS-ALD of Ru was achieved on three-dimensional SiO
and W patterned surface using BDMADMS as a SMI, where Ru selectively deposited only on the W regions, demonstrating precise control over nucleation and deposition, its promise for advanced integration strategies.
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Performance Analysis of Vertical GAA Si Nanosheet MOSFET Current Mirrors with Metal Sidewall S/D and Multiple Channels
Kuan-Ju Chou and Yiming Li 2025
ECS J. Solid State Sci. Technol.
14
125001
View article
, Performance Analysis of Vertical GAA Si Nanosheet MOSFET Current Mirrors with Metal Sidewall S/D and Multiple Channels
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, Performance Analysis of Vertical GAA Si Nanosheet MOSFET Current Mirrors with Metal Sidewall S/D and Multiple Channels
In this work, we investigate the effects of metal sidewall (MSW) source/drain (S/D) on basic current mirror (CM) circuits constructed from vertically arranged gate-all-around (GAA) nanosheet (NS) FETs. The performance of circuits with (w/) and without (w/o) MSW S/D is examined using 3D numerical device-circuit simulations. The electrostatic potential distribution in the studied structures is significantly affected by parasitic resistance. Incorporating MSW S/D reduces parasitic resistance and strongly influences the output characteristics, depending on the basic CM channel number. In terms of the current of basic CM, five channels w/ MSW S/D is better than eleven channels w/o MSW S/D, highlighting the critical need for MSWs to reduce source/drain parasitic resistance. Cascode CMs exhibit similar trends as CMs, and the use of MSW S/D allows for an increased number of channels in cascode configurations. For cascode CM with ten channels, the MSW S/D enables it to conduct a current that is three times higher.
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More Open Access articles
The following article is
Open access
Perspective—Opportunities and Future Directions for Ga
Michael A. Mastro
et al
2017
ECS J. Solid State Sci. Technol.
P356
View article
, Perspective—Opportunities and Future Directions for Ga2O3
PDF
, Perspective—Opportunities and Future Directions for Ga2O3
The β-polytype of Ga
has a bandgap of ∼4.8 eV, can be grown in bulk form from melt sources, has a high breakdown field of ∼8 MV.cm
−1
and is promising for power electronics and solar blind UV detectors, as well as extreme environment electronics (high temperature, high radiation, and high voltage (low power) switching. High quality bulk Ga
is now commercially available from several sources and n-type epi structures are also coming onto the market. There are also significant efforts worldwide to grow more complex epi structures, including β-(Al
Ga
1x
/Ga
and β-(In
Ga
1−x
/Ga
heterostructures, and thus this materials system is poised to make rapid advances in devices. To fully exploit these advantages, advances in bulk and epitaxial crystal growth, device design and processing are needed. This article provides some perspectives on these needs.
The following article is
Open access
Review—Influence of Processing Parameters to Control Morphology and Optical Properties of Sol-Gel Synthesized ZnO Nanoparticles
Sandeep Arya
et al
2021
ECS J. Solid State Sci. Technol.
10
023002
View article
, Review—Influence of Processing Parameters to Control Morphology and Optical Properties of Sol-Gel Synthesized ZnO Nanoparticles
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, Review—Influence of Processing Parameters to Control Morphology and Optical Properties of Sol-Gel Synthesized ZnO Nanoparticles
ZnO has several potential applications into its credit. This review article focuses on the influence of processing parameters involved during the synthesis of ZnO nanoparticles by sol-gel method. During the sol-gel synthesis technique, the processing parameters/experimental conditions can affect the properties of the synthesized material. Processing parameters are the operating conditions that are to be kept under consideration during the synthesis process of nanoparticles so that various properties exhibited by the resulting nanoparticles can be tailored according to the desired applications. Effect of parameters like pH of the sol, additives used (like capping agent, surfactant), the effect of annealing temperature and calcination on the morphology and the optical properties of ZnO nanoparticles prepared via sol-gel technique is analyzed in this study. In this study, we tried to brief the experimental investigations done by various researchers to analyze the influence of processing parameters on ZnO nanoparticles. This study will provide a platform to understand and establish a correlation between the experimental conditions and properties of ZnO nanoparticles prepared through sol-gel route which will be helpful in meeting the desired needs in various application areas.
The following article is
Open access
Review—Ionizing Radiation Damage Effects on GaN Devices
S. J. Pearton
et al
2016
ECS J. Solid State Sci. Technol.
Q35
View article
, Review—Ionizing Radiation Damage Effects on GaN Devices
PDF
, Review—Ionizing Radiation Damage Effects on GaN Devices
Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaN-based blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20–30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN–based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while
60
Co γ-ray irradiation leads to much smaller changes in HEMT drain current relative to the other forms of radiation. In InGaN/GaN blue LEDs irradiated with protons at fluences near 10
14
cm
−2
or electrons at fluences near 10
16
cm
−2
, both current-voltage and light output-current characteristics are degraded with increasing proton dose. The optical performance of the LEDs is more sensitive to the proton or electron irradiation than that of the corresponding electrical performances.
The following article is
Open access
Review—Photoluminescence Properties of Cr
3+
-Activated Oxide Phosphors
Sadao Adachi 2021
ECS J. Solid State Sci. Technol.
10
026001
View article
, Review—Photoluminescence Properties of Cr3+-Activated Oxide Phosphors
PDF
, Review—Photoluminescence Properties of Cr3+-Activated Oxide Phosphors
The Cr
3+
-activated phosphor properties are discussed in detail from an aspect of spectroscopic point of view. The host materials considered here are a various kind of oxide compounds. The photoluminescence (PL) and PL excitation spectra of the Cr
3+
-activated oxide phosphors are analyzed based on Franck−Condon analysis within the configurational-coordinate model. A new method is proposed for obtaining reliable crystal-field (
Dq
) and Racah parameters (
and
) based on a general ligand field theory with paying an attention to difficulty in the exact estimation of such important ligand field parameters. The intra-
-shell Cr
3+
states, such as
),
), and
), in various oxide hosts are determined and plotted against
Dq
in the Tanabe−Sugano energy-level diagram. The results obtained are summarized in graphical and tabular forms. A comparative discussion of Cr
3+
ion as an efficient activator in oxide and fluoride hosts is also given. The present analysis method can be used to predict an energy of Cr
3+
emission and/or to check a validity of the Racah parameter values for a variety of Cr
3+
-activated phosphors and related optical and optoelectronic device applications.
The following article is
Open access
Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga
Marko J. Tadjer
et al
2019
ECS J. Solid State Sci. Technol.
Q3187
View article
, Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3
PDF
, Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3
Gallium oxide (β-Ga
) is an emerging semiconductor with relevant properties for power electronics, solar-blind photodetectors, and some sensor applications due to its ultra-wide bandgap and developing technology base for high quality, melt-based substrate growth and thick, low-doped homoepitaxial layers. Of critical importance for the commercialization of this potentially important material is understanding of doping mechanisms in the monoclinic lattice, where two types of Ga sites and three types of O sites have been identified. A critical literature review of doping and defects of the monoclinic β-phase of gallium oxide is provided in this work. Theoretical fundamentals of both donor and acceptor doping in Ga
are reviewed. Advances in doping of epitaxial Ga
with a focus on molecular beam epitaxy and ion implantation are critically examined. As doping is fundamentally related to defects, particularly in this material, a review of defect characterization by optical and electrical spectroscopic methods is provided as well. P-type doping, one of the fundamental challenges for Ga
, is discussed in terms of first-principles calculations and ion implantation of known acceptors such as Mg and N.
The following article is
Open access
Atomic Layer Etching at the Tipping Point: An Overview
G. S. Oehrlein
et al
2015
ECS J. Solid State Sci. Technol.
N5041
View article
, Atomic Layer Etching at the Tipping Point: An Overview
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, Atomic Layer Etching at the Tipping Point: An Overview
The ability to achieve near-atomic precision in etching different materials when transferring lithographically defined templates is a requirement of increasing importance for nanoscale structure fabrication in the semiconductor and related industries. The use of ultra-thin gate dielectrics, ultra thin channels, and sub-20 nm film thicknesses in field effect transistors and other devices requires near-atomic scale etching control and selectivity. There is an emerging consensus that as critical dimensions approach the sub-10 nm scale, the need for an etching method corresponding to
Atomic Layer Deposition
(ALD), i.e.
Atomic Layer Etching
(ALE), has become essential, and that the more than 30-year quest to complement/replace continuous directional plasma etching (PE) methods for critical applications by a sequence of individual, self-limited surface reaction steps has reached a crucial stage. A key advantage of this approach relative to continuous PE is that it enables optimization of the individual steps with regard to reactant adsorption, self-limited etching, selectivity relative to other materials, and damage of critical surface layers. In this overview we present basic approaches to ALE of materials, discuss similarities/crucial differences relative to thermal and plasma-enhanced ALD, and then review selected results on ALE of materials aimed at pattern transfer. The overview concludes with a discussion of opportunities and challenges ahead.
Scaling-Up of Bulk β-Ga
Single Crystals by the Czochralski Method
Zbigniew Galazka
et al
2017
ECS J. Solid State Sci. Technol.
Q3007
View article
, Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
PDF
, Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
We present a new approach for scaling-up the growth of β-Ga
single crystals grown from the melt by the Czochralski method, which has also a direct application to other melt-growth techniques involving a noble metal crucible. Experimental and theoretical results point to melt thermodynamics as the crucial factor in increasing the volume of a growing crystal. In particular, the formation of metallic gallium in the liquid phase in large melt volumes causes problems with crystal growth and eutectic or intermetallic phase formation with the noble metal crucible. The larger crystals to be grown the higher oxygen concentration is required. The minimum oxygen concentration ranges from about 8 to 100 vol.% for 2 to 4 inch diameter cylindrical crystals, challenging the use of iridium crucibles in a combination with such high oxygen concentrations. A specific way of oxygen delivery to a growth furnace with the iridium crucible allows to minimize the formation of metallic gallium in the melt and thus obtaining large crystal volumes while decreasing the probability of the eutectic formation.
Tailoring Structural, Optical, and Dielectric Properties of PVC/PMMA/PS/ZnO Nanocomposites for Capacitive Energy Storage Applications
A. A. Al-Muntaser
et al
2025
ECS J. Solid State Sci. Technol.
14
033001
View article
, Tailoring Structural, Optical, and Dielectric Properties of PVC/PMMA/PS/ZnO Nanocomposites for Capacitive Energy Storage Applications
PDF
, Tailoring Structural, Optical, and Dielectric Properties of PVC/PMMA/PS/ZnO Nanocomposites for Capacitive Energy Storage Applications
Using a conventional casting method, flexible polymeric film nanocomposites composed of PMMA (polymethyl methacrylate), PS (polystyrene), PVC (polyvinyl chloride) and ZnO nanoparticles were synthesized. Fourier transform infrared (FTIR) spectroscopy identified distinct peaks corresponding to vibrational groups in the prepared samples. Upon doping the PVC/PMMA/PS blend with varying concentrations of ZnO NPs (2.5–10 wt%), most absorption intensities tend to diminish progressively as the ZnO contents have been increased to 5 wt%. Changes in FTIR vibrational bands indicated interactions between the PVC/PMMA/PS/ZnO nanocomposite constituents. The XRD patterns of the ZnO NPs-based composites have exhibited the same peaks of the pure blend; however, there is a notable increase in broadness and a significant reduction in intensity as the weight percentage of ZnO NPs rises from 2.5 to 10. This observation indicates the development of interactions between the polymer and nanoparticles. The redshift seen in the absorption edge of the samples filled with ZnO provided strong evidence that charge transfer complexes had formed inside the polymeric matrix. The indirect and direct energy gaps for allowable transitions decreased with increasing ZnO NP concentrations, ranging from 3.88 eV and 4.87 eV in the pure blend to 3.31 eV and 4.67 eV, respectively. The σ
AC
value at 100 Hz was 8.41 × 10
−13
S·cm
−1
and increased with frequency, reaching 5.12 × 10
−9
S·cm
−1
at 10
Hz. Also, a modest improvement in
AC
values is observed with the increase of ZnO NPs loading. The increase in conductivity can be ascribed to the improved amorphous nature of the synthesized nanocomposite facilitated by the incorporation of ZnO NPs. Dielectric studies showed that the best improvement was attained for the PVC/PMMA/PS/5 wt% of ZnO nanocomposite sample. Further, its imaginary part (
″) exhibited a constructive decrease in its value with the increase in the ZnO loadings. These findings recommend these nanocomposites for potential applications in optoelectronics and energy storage devices.
Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling
Shivani Yadav
et al
2024
ECS J. Solid State Sci. Technol.
13
047001
View article
, Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling
PDF
, Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling
This paper introduces a novel device called the Gate All Around Engineered Gallium Nitride Field Effect Transistor (GAAE-GANFET), designed specifically for label-free biosensing applications. This innovative gate-all-around engineering in GANFET integrates various device engineering techniques, such as channel engineering, gate engineering, and oxide engineering, to enhance biosensing performance. The channel engineering techniques refer to the use of a gallium nitride channel with a step-graded doping profile, divided into three distinct regions. In contrast, the gate engineering technique refers to the cylindrical split-gate-underlap architecture. The oxide engineering technique involves stacking Al
and HfO
. Moreover, this biosensor incorporates two-sided gate underlap cavities that facilitate the immobilization of biomolecules. These open cavities not only provide structural stability but also simplify the fabrication process to a significant extent. The viability of this biosensor as a label-free biosensor has been evaluated using an antigen and an antibody from the Avian Influenza virus and DNA as the target biomolecules. The proposed analytical model and TCAD simulation results are in excellent agreement, demonstrating the reliability of the proposed device. Additionally, the biosensor’s sensitivity, which depends on cavity length, doping concentration, gate metal work function, and temperature variation, has been thoroughly explored. The gate-all-around structure, along with the integration of tri-step graded doping, GaN as the channel material, gate oxide stacking, and dual open cavity structure in the proposed biosensor, leads to significantly improved biosensing capabilities.
The following article is
Open access
Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT
Y. Bourlier
et al
2018
ECS J. Solid State Sci. Technol.
P329
View article
, Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT
PDF
, Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT
The surface chemistry of InAlN ultra-thin layers, having undergone an oxidation procedure usually running through the HEMT fabrication process (850°C, O
and O
+Ar) is studied by XPS. The suitability of XPS analysis to operate as a retro-engineering tool for added value microelectronic devices fabrication is shown. A precise examination of the Al2p, In3d
5/2
, N1s, and O1s peaks directly informs about spatial and atomic arrangement. The formation of a covering 3 nm surface oxide is evidenced after O
annealing. Once annealed, two specific additional N1s contributions are shown, at higher (404.0 eV) and lower binding energies (397.4 eV) compared to the InAlN matrix one (396.5 eV). To our knowledge, such fingerprint is rather unusual for ternary III-V materials. It reveals the formation of a nitrogen deficient interlayer, situated between the oxide overlayer and the undisturbed matrix, and the presence of interstitial N
molecules trapped at the interface. After Ar annealing, both oxide and interface layers are partially reorganized. InAlN reactivity toward higher annealing temperature (950°C) and its stability over time is finally discussed. N
molecules are unstable and progressively eliminated in time although nitrogen deficient interlayer still remains. Thermal treatments below 850°C are recommended to preserve the barrier chemical integrity.
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2012-present
ECS Journal of Solid State Science and Technology
doi: 10.1149/issn.2162-8777
Online ISSN: 2162-8777
Print ISSN: 2162-8769