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Prediction of structures and properties for organic superconductors
Citation
Demiralp, Ersan
(1996)
Prediction of structures and properties for organic superconductors.
Dissertation (Ph.D.), California Institute of Technology.
doi:10.7907/7p7g-sm17.
Abstract
NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document.
The main contributions of this thesis to the field of organic superconductors are basically (a) the band structure calculations for the investigations of the conduction properties of [...] using 2-D Hubbard Model with Unrestricted Hartree-Fock (UHF) theory, (b) ab initio quantum mechanical calculations for the structural characterizations and the properties of the donors of the organic superconductors, (c) electron-transfer boat-vibration (ET-BV) mechanism for the superconductivity of these materials, (d) developing force fields for BEDT-TTF and BEDT-TTF+.
To provide a basis for understanding the puzzling electronic properties of the organic superconductor [...] (with Tc=10.4K), we carried out band calculations using the 2-D Hubbard Model with Unrestricted Hartree-Fock (UHF) theory. The electron transfer hopping interactions are from ab initio calculations and the Hubbard parameter (Uopt=0.678950 eV) is adjusted to fit Shubnikov-de Haas and magnetic breakdown experiments. The calculations lead to a two-band semi-metal with a momentum gap separating the electron and the hole bands. The anomalous experimental observations are explained in terms of BEDT-TTF related phonons coupling these two bands (lower temperature) and by anion related phonons (higher temperature). These results also provide a framework for describing the conduction properties of other such complexes.
The donors of all known one- or two-dimensional organic superconductors, X, are based on a core organic molecule that is either tetrathiafulvalene (denoted as TTF) or tetraselenafulvalene (denoted as TSeF) or some mixture of these two molecules. Coupling X, with appropriate acceptors, Y, leads to superconductivity. The oxidized form of X may be X+ or X2+ species in the crystal. Using ab initio Hartree-Fock (HF) calculations (6-31G** basis set), we show that BEDT-TTF deforms to a boat structure (C2 symmetry) with an energy 28 meV (0.65 kcal/mol) lower than planar BEDT-TTF (D2 Symmetry). On the other hand BEDT-TTF+ is planar. Performing ab initio quantum mechanical calculations (HF/6-31G**) also on the other donors of organic superconductors, we find that all known organic superconductors involve an X that deforms to a boat structure while X+ is planar. This leads to a coupling between charge transfer and the boat deformation phonon modes. We propose that this electron-phonon coupling is responsible for the superconductivity and predict the isotope shifts [...] for experimental tests of the electron-transfer boat-vibration (ET-BV) mechanism. We suggest that new higher temperature organic donors can be sought by finding modifications that change the frequency and stability of this boat distortion mode. Based on this idea we have developed similar organic donors having the same properties and have suggested that with appropriate electron acceptors they will also lead to superconductivity.
The highest transition temperature Tc organic superconductors all involve molecule BEDT-TTF coupled with an appropriate acceptor. The experimental structures exhibit considerable disorder in the outer rings and concomitant uncertainty in the structures of BEDT-TTF. We find that Hartree-Fock (6-31G** basis set) calculations leads to results within 0.01Å and 1° of experiment for the ordered regions allowing us to predict to composite structures expected to have this accuracy. We report optimized geometries and atomic charges for BEDT-TTF, BEDT-TTF+, and BEDT-TTF+1/2 that should be useful for atomistic simulations.
The vibrational levels of BEDT-TTF and BEDT-TTF+ have been only partially observed and assigned. In order to provide a complete consistent description of all levels, we carried out HF calculations for all fundamental vibrational frequencies of BEDT-TTF and BEDT-TTF+ and obtained the Hessians for these structures. With these Hessians and available experimental frequencies, we developed the force fields for the neutral and cation BEDT-TTF molecules by using Hessian-biased method.
Item Type:
Thesis (Dissertation (Ph.D.))
Degree Grantor:
California Institute of Technology
Division:
Engineering and Applied Science
Major Option:
Applied Physics
Thesis Availability:
Public (worldwide access)
Research Advisor(s):
Goddard, William A., III
Thesis Committee:
Goddard, William A., III (chair)
Defense Date:
12 December 1995
Record Number:
CaltechETD:etd-09082006-140314
Persistent URL:
DOI:
10.7907/7p7g-sm17
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Prediction of Structures and Properties for
Organic Superconductors
Thesis by
Ersan Demiralp
In Partial Fulfillment of the Requirements
for the Degree of
Doctor of Philosophy
California Institute of Technology
Pasadena, California
1996
(Submitted 12 December 1995)
ii
Ersan Demiralp
ill
To my parents
iv
Acknowledgements
I am indebted to many generous people for their help and support during my stay at
Caltech. My deepest debt of gratitude is to my advisor, Bill Goddard. His intellec-
tual influence is evident throughout this thesis. Of all the members of the Goddard
group, I would especially like to thank Siddharth Dasgupta, Tahir Cagin, Naoki
Karasawa, Guanhua Chen, Francesco Faglioni, Xinlei Hua, Jean-Marc Langlois, Jim
Gerdy, Charles Musgrave, Xiaojie Chen, Ken Brameld for their friendship and sup-
port. I thank Terumasa Yamasaki of Asahi Chemical, a friend and a colleague for his
enjoyable friendship. My thanks also go to Kiirgad Kiziloglu for his “eski dostlugu.”
Mine’m has been a constant inspiration for me: “So oft have I invoked thee for
my Muse.” Finally, I would like to thank my family, in particular my parents who
have been my deepest source of support.
Abstract
The main contributions of this thesis to the field of organic superconductors are ba-
sically (a) the band structure calculations for the investigations of the conduction
properties of k — (BEDT —TTF).Cu(NCS)> using 2-D Hubbard Model with Unre-
stricted Hartree-Fock (UHF) theory, (b) ab initio quantum mechanical calculations
for the structural characterizations and the properties of the donors of the organic
superconductors, (c) electron-transfer boat-vibration (ET-BV) mechanism for the
superconductivity of these materials, (d) developing force fields for BEDT-TTF and
BEDT-TTF*.
To provide a basis for understanding the puzzling electronic properties of the or-
ganic superconductor «-—(BEDT —TTF)2.Cu(NCS)» (with T, = 10.4 K), we carried
out band calculations using the 2-D Hubbard Model with Unrestricted Hartree-Fock
(UHF) theory. The electron transfer hopping interactions are from ab initio calcula-
tions and the Hubbard parameter (U,p: = 0.678950 eV) is adjusted to fit Shubnikov-
de Haas and magnetic breakdown experiments. The calculations lead to a two-band
semi-metal with a momentum gap separating the electron and the hole bands. The
anomalous experimental observations are explained in terms of BEDT-TTF related
phonons coupling these two bands (lower temperature) and by anion related phonons
(higher temperature). These results also provide a framework for describing the con-
duction properties of other such complexes.
The donors of all known one- or two-dimensional organic superconductors, X, are
based on a core organic molecule that is either tetrathiafulvalene (denoted as TTF)
or tetraselenafulvalene (denoted as TSeF) or some mixture of these two molecules.
Coupling X, with appropriate acceptors, Y, leads to superconductivity. The oxi-
dized form of X may be X* or Xj species in the crystal. Using ab initio Hartree-
Fock (HF) calculations (6-31G** basis set), we show that BEDT-TTF deforms to
a boat structure (C2 symmetry) with an energy 28 meV (0.65 kcal/mol) lower than
vi
planar BEDT-TTF (D2 symmetry). On the other hand BEDT-TTF* is planar. Per-
forming ab initio quantum mechanical calculations (HF /6-31G**) also on the other
donors of organic superconductors, we find that all known organic superconductors
involve an X that deforms to a boat structure while Xt is planar. This leads to
a coupling between charge transfer and the boat deformation phonon modes. We
propose that this electron-phonon coupling is responsible for the superconductivity
and predict the isotope shifts (67.) for experimental tests of the electron-transfer
boat-vibration (ET-BV) mechanism. We suggest that new higher temperature or-
ganic donors can be sought by finding modifications that change the frequency and
stability of this boat distortion mode. Based on this idea we have developed similar
organic donors having the same properties and have suggested that with appropriate
electron acceptors they will also lead to superconductivity.
The highest transition temperature 7’, organic superconductors all involve molecule
BEDT-TTF coupled with an appropriate acceptor. The experimental structures ex-
hibit considerable disorder in the outer rings and concomitant uncertainty in the
structures of BEDT-TTF. We find that Hartree-Fock (6-31G** basis set) calcula-
tions leads to results within 0.01A and 1° of experiment for the ordered regions
allowing us to predict to composite structures expected to have this accuracy. We
report optimized geometries and atomic charges for BEDT-TTF, BEDT-TTF*, and
BEDT-TTF*? that should be useful for atomistic simulations.
The vibrational levels of BEDT-TTF and BEDT-TTF* have been only partially
observed and assigned. In order to provide a complete consistent description of all
levels, we carried out HF calculations for all fundamental vibrational frequencies of
BEDT-TTF and BEDT-TTF* and obtained the Hessians for these structures. With
these Hessians and available experimental frequencies, we developed the force fields
for the neutral and cation BEDT-TTF molecules by using Hessian-biased method.
vil
Contents
Acknowledgements iv
Abstract Vv
1 Introduction 1
2 Band Structure Calculations for « — (BEDT — TTF),Cu(NCS)> 13
3 Structural Calculations for Organic Superconductors 58
3.1 Ab Initio and Semi-empirical Electronic Structural Studies
on BEDT-TTF ...... 0.0.0.0... 0000 es 59
3.2 The Electron-Transfer Boat-Vibration Mechanism For Organic
Superconductors ..........0. 0000000 cee eee, 80
3.3 Prediction of New Donors for Organic Superconductors ... 103
3.4 Ab Initio Studies of TTF-based Donors of Organic Supercon-
ductors .. 0... ek 115
4 Molecular Mechanical Calculations for BEDT — TTF and BEDT —
TT Ft 127
Chapter 1 Introduction
Organic molecular solids are commonly regarded as insulators. They usually have
few charged species and poor overlap between orbitals of neighboring molecules. In
the last fifteen years, new organic solids were found to exhibit metallic and even
superconducting behavior. These organic metals (also called synthetic metals) contain
only non-metallic elements such as carbon, hydrogen, sulfur, etc. in their conduction
frameworks. They also show interesting low dimensional behaviors. In this thesis, we
study the structures and the properties of the organic superconductors, except Cg
systems. Development of new organic materials is still in progress and very promising
for making higher transition temperature superconductors. Organic materials are
one of the best candidates for new superconductors since organic species can be
systemically modified.
In 1979, Bechgaard made (TMTSF).Y (now known as Bechgaard salts) which
consist of chains of TMTSF cations alternating with chains of inorganics anions,
Y (See Figure 1 in Section 3.3 for the nomenclature of organic donors).! For the
first Bechgaard salts, Y was PFs, AsF¢, SbF¢, etc. In 1980, (TMTSF),PFs was
shown to become superconductor at 1.4 K under an applied pressure of 6.5 kbar.?
Other Bechgaard salts were also shown to be superconducting under similar pres-
sures. Later, Bechgaard synthesized an ambient pressure organic superconductor
(ITMTSF),ClO, (T. = 1.4 K) with smaller spacing along chain of TMTSF stack.®
These successes opened the field of quasi one- or two-dimensional organic super-
conductors. The superconducting temperatures of Bechgaard salts are very low (1
to 3 K). However, several new donors of organic superconductors, such as BEDT-
TTF, BEDO-TTF, MDT-TTF, were synthesized to increase T, during the last. fif-
teen years. The highest transition temperature organic superconductors all involve
molecule BEDT-TTF (also denoted as ET) coupled with an appropriate acceptor.
In 1983, first ET superconductor, (ET)2ReO, was shown to be superconducting at
2 K under 4 kbar.* Since that time, more than twenty ET salts were found to be
superconducting.” The highest T, of these materials is 11.6 K at ambient pressure
for K — (ET),Cu[N(CN)2|Br (12.8 K at 0.3 kbar for k — (ET).Cu[N(CN),|CIl. See
Figure 1 for « — (ET),Cu|N(CN).|Br). The number of organic superconductors is
growing by synthesizing both new electron-donor molecules as well as new species.
There could be many substitutions to obtain higher T,, but it is not totally clear which
system would be best. The mechanism of the superconductivity in these materials
should be clarified for rational design of higher T, organic superconductors.
Most of the organic superconductors are of the form Dj{A~ with two donor
molecules sharing one charge. Different ways of stacking of the donor molecules
lead to many polymorphic phases. ET sometimes give many phases with one anion.
For example, (ET)2/3 have nine phases denoted by a, 6, y, 6, €, 7, €, K, 0.° Four
of these phases, a, k, 0, @ show superconductivity with T, between 1.5 K to 8.1 Kk.
These materials show a variety of electronic behaviors, i.e. semiconducting, metallic,
superconducting, etc.
The isotopic shift experiments °7°9!9) show that the mechanism of supercon-
ductivity involves the electron-phonon coupling and Bardeen-Cooper-Schrieffer (BCS)
theory. The electron-phonon matrix elements should be calculated to estimate T, for
a BCS system. To this end, one should obtain the electronic and the vibrational struc-
tures of these materials. Full quantum mechanical calculations are not practical for
these systems which contain on the order of hundred atoms in their unit cells. Thus,
one can employ the model Hamiltonians for the electronic structure calculations and
the force field methods for the phonon calculations. In Chapter 2, we performed elec-
tronic band structure calculations using the 2-D Hubbard Model with Unrestricted
Hartree-Fock (UHF) theory for the organic superconductor kt — (ET).Cu(NCS),
(with T, = 10.4K) to provide a basis for understanding the conduction properties of
this material (See Figure 2 and 3). The problem of electron-electron interactions and
their effects on the properties of physical systems are very important in solid state
physics. Hubbard proposed a model for the problem of electron correlations in the
d-electrons of the transition metals.!*13 In recent years, there have been many studies
on high J, superconducting materials using Hubbard Model. The Hubbard Model
has a simple Hamiltonian:
H® = SO (tyalaje + tiyalaic) HUY nioni-e (1)
where al, Gig, and nj, are the creation, annihilation, and number operators, respec-
tively, for the electron with spin o at site 7 and ¢,; are the hopping matrix elements
and U is the on-site Coulomb interaction. Here, < ij > indicates that the sum
is taken over nearest neighbor atoms. Despite the simplicity of this Hamiltonian,
Hubbard Model could not be solved exactly except in one dimension.'* The organic
superconductor « —(ET).Cu(NC'S)» possesses a number of puzzling electronic prop-
erties, including the temperature dependence of resistivity, magnetic susceptibility,
and Hall coefficient. Each unit cell of k-(ET)2Cu(NCS), has two Cu(NCS)>; units
and two (ET)} dimers packed perpendicular to each other in a parallel planar layer.
Since a plane of (ET)} dimers is sandwiched between the insulating Cu(NCS);
planes and two-dimensional electronic conduction behavior is observed, we describe
the electronic structure with a two-dimensional (2-D) Hamiltonian. There is no exact
solution for the 2-D Hubbard Model, hence we use Unrestricted Hartree-Fock (UHF)
approximation to describe electron-electron interaction terms,
NigNi-g © Nig < Ng > + < Nig > Nig-— < Nig >< Mg >. (2)
The UHF wavefunction is a Slater determinant of spin orbitals,
Noee
v= |] Alen9 (VAC >, (3)
kbo
where the spatial orbitals for up-spin are allowed to be different from those with
down-spin. Here, b, k denote the band index and k-point in the Brillouin Zone (BZ)
respectively. The variational equations have the form
HUHF,,
A Vkbo = EkboVkbs (4)
which must be solved self-consistently. Each UHF orbital is expanded in terms of
the basis set {xy} consisting of the Highest Occupied Molecular Orbital (HOMO) on
each ET
Vkoo = y XoCkbo(Q) — - (5)
The results of our band structure calculations are encouraging for the understanding
of several different electronic behaviors of ET salts.
The conducting molecular solid are charge-transfer (CT) salts with donor (D) and
acceptor (A) molecules. The charge transfer between donor and acceptor molecules
of the solid can be written as:
An + Dm — AZ’ + DP ;
where p is the amount of charge transferred. Several important issues related to
the molecular and the crystal properties should be considered to create a conducting
molecular solid. First, the solid should be stable with the charged building blocks.
Then, these charges should overcome Coulomb repulsions and delocalize to form
metallic bands. The electronic structure and the properties of the molecule (such
as ionization potential, electron affinity, polarizability, etc.) affect the nature and the
magnitude of the molecular interaction forces. The shape of the molecule is crucial for
the crystal packing due to van der Waals interactions. This leads to the interrelations
between the molecular arrangement and the molecular interactions. The stability
and the conduction properties of the molecular solid depend on these relations. In
Chapter 3, we present ab initio quantum chemical Hartree-Fock (HF) calculations
for the structures and the properties of the donors of the organic superconductors.
These organic materials show anisotropic conduction with high conductivity in the
plane (mostly for ET salts) or along chain (mostly for TMTSF salts) of the donors.
Thus, the changes in the properties of these molecules upon chemical modification
(structure, ionization potential, shape and energy of the molecular orbitals) are im-
portant for understanding the electronic and crystal structures of materials containing
these organic donors. We have performed ab initio quantum mechanical geometry op-
timizations for a number of donors in both the oxidized (Xt) and neutral (X) states.
We find that all known donors for superconductors lead to a distorted boat conforma-
tion and a planar conformation X*. As an electron hops from X to X7, the original
X distorts from boat to planar. This leads to a coupling between conduction electrons
and vibration (phonons) that is, we believe, the salient coupling for superconductivity.
With this insight, we have modeled electron-transfer boat-vibration (ET-BV) mech-
anism for the superconductivity of these materials. Using this model, we estimated
the isotope effects and found that our estimations are consistent with the available
experimental results.
In principle, one can perform quantum chemical calculations to obtain any prop-
erty for an isolated molecule. Recent developments of the computer hardware and
the software make it possible to do ab initio quantum mechanical calculations for
the donors of the organic superconductors. Despite this progress, ab initio quantum
mechanical calculations are still not practical for large systems such as molecules with
more than 100 atoms and crystals. Molecular mechanics or force field method is suit-
able for calculations on large systems. In general, the electrons are much faster than
nuclei, thus the electronic and nuclear motions are treated separately in the Born-
Oppenheimer approximation. Starting from the Born-Oppenheimer approximation,
the electronic states are averaged out to obtain atomic interaction potentials. In
molecular mechanics or force field method, each atom is a classical particle interact-
ing with atomic interaction potentials. Force fields are usually described in terms of
the sum of short-range valence interactions and long-range nonbond interactions:
The valence interactions are typically written as
om"
“I
Ne
vat = Boond + angle + E, + torsion + inversion
to include bond stretch Epona, angle bend Eangie, angle-bond and bond-bond cross E,,
dihedral torsion Ejorsion, inversion Ejnyersion terms. The nonbond interactions are
typically written as
Enp = Evaw + Eg (8)
to include van der Waals E,,aw and electrostatic Eg terms. The main advantage of the
force field approach is the reduction of the computational cost for large systems. The
amount of computer memory and time is drastically reduced by using the molecular
mechanics. For example, the quantum chemical frequency calculation (HF 6-31G*™*
basis set) took 14 hours 10 minutes 65 seconds on JPL Cray and molecular mechanical
frequency calculation took ~ 3.5 seconds on SGI Indigo workstation for neutral ET.
On the other hand, the force field approach can not be applied to the problems where
development of the reliable force field which will lead to reliable results. Hence, it is
very important to use some experimental or accurate quantum mechanical information
when one develops a force field. The Biased Hessian method uses the experimental or
accurate quantum mechanical frequencies to develop a force field. However, this is an
involved optimization process and can be very time consuming. But once a reliable
force field is obtained for a system, all kinds of molecular mechanical or molecular
dynamical calculations can be performed. In Chapter 4, we present the calculated
vibrational spectra for the equilibrium structures of ET (boat) and ET? (planar).
Using calculated structures, Hessians and available experimental frequencies we have
developed the force fields for the neutral and cation ET molecules. These results
should be helpful for the assignments of the modes and for the calculations of the
phonon structures of the crystals containing ET molecules.
Although most of our calculations are performed on ET systems, the applica-
tions of the models that are presented in this thesis on the other donors of organic
superconductors are straightforward.
References
10.
11.
12.
Bechgaard K., Jacobsen C. §., Mortensen K., Pedersen H. J., Thorup N., Solid
State Commun. 33, (1980) 1119.
Jerome D., Mazaud A., Ribault M., Bechgaard K., J. Phys. Lett. 41, (1980)
L95.
Bechgaard K., Carneiro K., Olsen M., Rasmussen F. B., Jacobsen C. S., Phys.
Rev. Lett., 46, (1981) 852.
Parkin S$. S., Engler E. M., Schumaker R. R., Lagier R., Lee V. Y., Scott J. C.,
Greene R. L., Phys. Rev. Lett., 50, (1983) 270.
Mori H., Int. J. of Modern Physics B, 8 (1994) 1-45.
Tokumoto M., Konishito N., Tanaka Y., Anzai H., Journal of the Physical
Society of Japan, 60, (1991) 1426.
Oshima K., Urayama H., Yamochi H., Saito G., Synthetic Metals, 27 (1988)
A473.
Schirber J. E., Overmyer D. L., Carlson K. D., Williams J.M., Kini A. M.,
Wang H. H., Charlier H. A., Love B. J., Watkins D. M., Yaconi G. A., Phys
Rev B 44, (1991), 4666.
Mori H., Hirabayashi I., Tanaka S., Mori T., Maruyama Y., Inokuchi H., Syn-
thetic Metals, 55-57 (1993)2437.
Heidmann C. P., Andres K., Schweitzer D., Physica 143B, (1986), 357.
Saito G., Yamochi H., Nakamura T., Komatsu T., Matsukawa N., Inoue T., Ito
H.,Ishiguro T., Kusunoki M., Sakaguchi k., Mori T., Synthetic Metals, 55-57
(1991) 2883.
Hubbard J., Proc. Roy. Soc., A276 (1963) 238-257
13. Hubbard J., Proc. Roy. Soc., A277 (1964) 237-259
14. Lieb E.H., Wu F.Y., Phys. Rev. Lett., 20, (1968) 1445-1448
Figure Captions
Figure 1. The crystal structure of « — ET,Cu[N(CN).|Br
Figure 2. The crystal structure of « — (ET)2.Cu(NCS).
Figure 3. Top view of the crystal structure of « — (ET).Cu(NC'S)>,
10
SES 34/ SES
= i] rae 1} Peo
Ea
i vt tT v
S- wt SS wh
a!
js Fe
WN TS DY Ee
Ey
ear
way
See
oer,
Ear Grae as en
13
Chapter 2 Band Structure Calculations for
« —(BEDT — TT F)2Cu(NCS)»
14
The Conduction Properties of the Organic
Superconductor, « — (BEDT — TTF),Cu(NCS)2, Based on
the Hubbard Unrestricted Hartree-Fock Band Model
Abstract
The organic superconductor « — (BE DT —TTF).Cu(NCS), (with T, = 10.4k)
possesses a number of puzzling electronic properties, including the temperature de-
pendence of resistivity, magnetic susceptibility, and Hall coefficient. To provide a
basis for understanding these properties, we carried out band structure calculations
using the 2-D Hubbard Model with Unrestricted Hartree-Fock (UHF) theory. The
parameter (Ujp: = 0.678950 eV) is adjusted to fit Shubnikov-de Haas and magnetic
breakdown experiments. The calculations lead to a two-band semi-metal with a mo-
mentum gap separating the electron and hole bands. The anomalous experimental
observations are explained in terms of ET related phonons coupling these two bands
(lower temperature) and by anion related phonons (higher temperature). These re-
sults also provide a framework for describing the conduction properties of other such
complexes.
15
1.0 Introduction
Since 1980 the superconducting transition temperature, T,, of quasi one- and
two-dimensional organic superconductors has improved from 1.4 K! to 12.8 K.? The
best systems involve bis(ethylenedithio)tetrathiafulvalene (denoted as BEDT-TTF or
ET, shown in the Figure 1). Depending upon the acceptor and the packing, these
systems exhibit a variety of electronic behaviors, including semiconducting, metallic,
and superconducting.
One of the most interesting systems is « — (ET),Cu(NCS)o, which exhibits T, =
10.4 K at ambient pressure (See Figure 2 and 3 in Chapter 1). In k-(E'T)2Cu(NCS)o,
a layer of ET molecules paired into (ET)} dimers is sandwiched between insulating
Cu(NCS)5 planes. [The oxidation states are based on the ESR results? for Cu plus
charge neutrality.] This leads to conduction anisotropy along a, b and c directions
of?” Oge 1 0h 1 Oe = 5 : 1: 1.2. These systems can be considered as 2-D electronic
conductors (be plane). Each unit cell of k-(ET)2Cu(NCS)» has two Cu(NCS)>
units and two (ET)} dimers packed perpendicular to each other in a parallel planar
layer.
The electronic behavior of this salt is complex. As indicated in Figure 2a, the
resistivity, p, is a maximum around 100 K. p increases as T” below 100 K but decreases
as e?/T for above 100 K. As indicated in Figure 2b, the Hall coefficient, Ry, is positive
(hole-like) and both decreases rapidly and linearly as temperature increases to T =
60K; above 60 IK Ry decreases very slowly with T. As indicated in Figure 2c, the
magnetic susceptibility, x, is positive and almost constant (Pauli paramagnetism)
between 100 K and 300 K. Below 100 K, y decreases monotonically about 15% until
T = T, where it plummets to near zero. The superconducting T, is higher by 0.5
to 0.6 K when the hydrogens in ET are replaced by deuteriums (an inverse isotope
effect).
Shubnikov-de Haas’ (SdH) (Figure 2d), magnetic breakdown’ (Figure 2e) and
thermopower™* (Figure 2f) experiments on « —(ET)2Cu(NC'S), have been explained
qualitatively in terms of a two-band model derived from tight-binding band structure
calculations reported by Oshima et al.° and by LeBlanc et al.® However explana-
16
tions for the puzzling anomalies in the resistivity, susceptibility, and Hall effect have
not been provided. Several different mechanisms, (e.g. band gap opening,® polaron
formation®) have been offered to explain the anomaly of the resistivity around 100K.
However, no consistent explanation has been given for all these phenomena.
In this paper we develop a model for explaining these electronic properties. It
is based on the band structure (Section 2) of « — (ET)»Cu(NCS)> calculated using
a Hubbard model combined with Unrestricted Hartree-Fock (H-UHF) theory. The
predictions are compared with experiment in Section 3.
2.0 UHF Calculations Using the 2-D Hubbard Model
Since a plane of (ET)} dimers is sandwiched between the insulating Cu(NCS);
planes and since two-dimensional electronic conduction behavior is observed, we will
describe the electronic structure with a two-dimensional (2-D) Hamiltonian. The
highest two occupied molecular orbitals (MO) of ET are separated by 1.068 eV (HF
calculations with the 6-31G** basis set); hence we will consider only the Highest Occu-
pied Molecular Orbital (HOMO) on each ET molecule. The hopping matrix elements
(t;;) for HOMO’s on neighboring ET molecules are small compared to the Coulomb
interaction between two electrons in the same MO. Thus, electron correlation effects
are important, requiring a Hubbard model.
2.1 The Hubbard-UHF Calculations
We describe the electronic structure in terms of a 2-D Hubbard model with the
Hamiltonian (1):
HY = » (tijat,00 + ti; \,Qic) +U » NioNiio ’ (1)
<1j>,0
where a! Gig, and nig are the creation, annihilation, and number operators, respec-
wo?
tively, for the electron with spin o at site 7. Here, < 77 > indicates that the sum
is taken over the six nearest neighbors of each molecule. For the electron transfer
integrals t;;, we use the values (Table 1) of LeBlanc et al.® obtained from ab initio
generalized valence bond (GVB) calculations (on dimers corresponding to nearest-
17
neighbor ET molecules, using a minimal basis set). For the Hubbard parameter U
we estimate in Section 2.2 that U ~ 0.80 eV. Consequently, we calculated the band
structure using values of U in the range of 0 to 1.0 eV.
We find the following results:
1. U < Uz = 0.6780 eV leads to metallic behavior, with a nearly filled third band
(17% hole states) and a partially filled fourth band (17% electron states). |
ia. U < U, leads to an equal probability of up-spin and down-spin at each site!®
while U > U, leads to antiferromagnetic behavior.
iu. U, < U < U; = 0.698960 eV leads to semi-metallic behavior (nonoverlapping
third and fourth bands)
ww. U < Uaosea = 0.685195 eV leads to open orbits for electrons and closed orbits
for holes, but U > Ucipsea leads to closed orbits for both
v. U > U; leads to semiconducting or insulating behavior (a gap between the
third and the fourth bands).
vt. Usp: = 0.678950 eV leads to results in agreement with current experiments on
K — ET.Cu(NCS)o.
There is no exact solution for the 2-D Hubbard model, and hence we use the UHF
approximation to describe electron-electron interaction terms,
NigNi-¢ & Nig < Ning > + < Nig > Njug— < Nig >< Ni-g > . (2)
The average < nj, > for finite temperature is defined as the sum over all four bands
(nic) >> Noo (t
of the occupation number
Nkbo ( 1)
mel = SDE @)
where k is summed over the Brillouin Zone for all four bands. Here 3 = iat ae Qisa
normalization factor, and pu is the chemical potential.
18
The UHF wavefunction is a Slater determinant of spin orbitals,
Noce
v=] al,|vac> , (4)
kbo
where the spatial orbitals for up-spin are allowed to be different from those with
down-spin. The variational equations have the form
HUHF
H Vkbe = €kboVkbc
which must be solved self-consistently. Each UHF orbital is expanded in terms of the
basis set {x,} consisting of the HOMO orbital on each ET
Vkbo = d_ XoCkbo (0)
(4
This leads to the multiband equation (5) for each spin
3 [uv < Np,-0 > bno + toe Pre] Ckbo (17) = EkboCkbo (0) ’ (5)
where 6, is the Kronecker delta function and R,» is the distance vector between
neighboring sites. For t,. we use the values obtained by Leblanc et al.° from GVB
calculations.
2.2 The Value of U
To estimate the value of U we carried out Hartree-Fock (6-31G** basis set)
calculations"! on the successive ionization potentials of isolated ET and ET*+ molecules.
This leads to
IP, = Epps — Epp = 5.80eV
and
IP, = Eer+ _ Epr+ = 9.938eV
19
Thus for a vacuum we obtain
Uvac = [Pp — ITP, = 4.13eV . (6)
In the crystal, Uae is reduced by screening. ET is nearly planar with a length of
~13.5A (from the hydrogen of one end to the hydrogen of the other end) and 6
nearest neighbors at an average distance of 3.80A from the middle.!? Adding 1.0 A
_for the radius of the hydrogen atoms, we take a ~ 15.5A as the effective length of
ET.
Taking each ET as a charged conducting ellipsoid with semiaxes a = 15.5 A and
> b=c= 38A, leads the potential
a2 — b?
q tanh7!
&(q) Ja ak 2 q 3.993 e (7)
on the surface of the ellipsoid, where q is the electric charge (in units of absolute
electron charge) on the ellipsoid. By bringing the charge from infinity, the IP’s in the
crystal are estimated as
O(1
and
o(2
This leads to
—]l
Use = (IP: — IP1) se = Uvac — . (1) . (8)
We use € = 6 based on the estimate by Vlasova et al.' for the static dielectric constant
of (ET),Cu(NCS), in the b direction (in the plane of ET molecules). Using ® from
(7) in (8) leads to (IP,)s¢ = 2.47 eV, (IP2)s¢ = 3.27 eV and U,. = 0.80 eV. Thus
we considered the range 0 < U < 1.0 eV for the band calculations. Comparing to
experiment (vide infra) we conclude that Uj», = 0.678950 eV.
2.3 The Band Structure
20
Since the unit cell of k — (ET),Cu( NCS), has four ET molecules, there are four
bands based on the HOMO orbitals. With two electrons transferred to the Cu( NCS);
units, there are six electrons (two holes) to be shared by the HOMO’s of the four ET
molecules. Thus, 3/4 of all states are occupied.
Figure 3 shows the band structures for various values of U from 0 eV to 1.0 eV
and Figure 4 shows the corresponding Fermi surfaces. The Fermi energy is taken
as the energy reference, leading to negative energies for occupied levels and positive
energies for empty levels.
With UHF the energies and eigenstates of up-spin and down-spin are allowed to
be different at the same k-point. However, we find that for U < U, = 0.6780 eV
the band structures for spin-up and spin-down electrons are the same.! This leads
to calculated spin densities that are nearly the same (< nig >&< nig > 0.75)
for all sites. Our calculations (Table 2) lead to slight deviations from the expected
spin density of 0.75. Thus with U = 0 two sites have 0.7511 while the other two have
0.7489. This indicates that the four ET molecules have slightly different environments.
Very slight differences between < nig > and < nig > occur for U < U, = 0.678 eV.
Thus we find a net spin density of S,-, = 0.0003 at U = 0.670, 0.0007 at U = 0.674
and Sree = 0.0050 at U = 0.678. Above U, = 0.6780 eV the net spin density rises
rapidly as shown in Figure 5b. The numerical calculations are carried to a point
where < nig > is converged to better than 0.001 so that these small differences are
part of the H-UHF model.
For U > U,, the on-site Coulomb repulsion causes a significant difference between
the up-spin and down-spin densities at the same site (< nai >#< ng; >), leading to
antiferromagnetic character. Thus the down-spin bands differ increasingly from the
up-spin bands. The band structures are almost identical except for small differences
in the second and third bands, especially along M —TI. This is shown in Figures 31
(up-spin) and 3j (down-spin) for U = 1.0 eV. We conclude below that the value of
Usp: = 0.678950 eV (Figure 3c) explains the electronic behavior of those systems.
Table 2 shows up-spin and down-spin densities for various values of U. A good
21
measure of spin unpairing is
Snet = 4 S| < Nig — Nij-o > | ; (9)
which is tabulated in Table 3 and shown in Figure 5b. We see that
t. Spee © 0.0 for U < U, = 0.6780 eV.
a. for U > Ua, Snet equals to 0.018 at Uop: = 0.678950 eV. Then, S;,.¢ increases
rapidly to S,~ = 0.123 at U = 0.679 eV, Sree = 0.322 at U = 0.690 eV, and
Snet = 0.362 at U; = 0.698960 eV. Above U; it increases more slowly, finally reaching
Snet — 0.500 as U > ov.
iit. Snet = 0.5 for a perfect antiferromagnetic (U = co); thus Sy-¢ can be consid-
ered as the average spin density on each ET.
The conduction band occupancy (see Table 3, and Figure 5a) is constant, N, =
0.1697, for U < U, = 0.6780 eV. It decreases rapidly to N, = 0 at U; = 0.698960 eV.
Figures 6(a), 6(b), 6(c) and 6(d) show the density of states per spin at U = 0,
U, = 0.678 eV U = 0.678950 eV and U = 0.679 eV. The effective mass is defined as
N,(Er)
No
Mk = Me (10)
where N, is the band density of states, No is the density of states for free electrons
and Ep is the Fermi energy. This leads to m* = 0.90, m* = 1.14 for U = 0 eV
and m* = 0.99, mz? = 1.08 for Usp: = 0.678950 eV, where v and c denote the third
(valence) and fourth (conduction) bands.
Applying Fermi-Dirac statistics to the calculated band structure leads to the tem-
perature dependence for the conduction band occupation (NV) shown in Figure 7.
The valence band occupation is given by N, = 1— N,. For both U = 0 eV and
Uope = 0.678950 eV, N, increases monotonically with temperature.
Table 4 lists various characteristic energies of the band structure (measured rela-
tive to the bottom of the lowest band).
The band picture is strongly affected by the splitting of the bands. For U <
22
U, = 0.6780 eV the third and fourth bands overlap along the M — Y and M — Z
directions in reciprocal space, leading to metallic character. For U < U; = 0.698960
eV, this leads to holes in the third band and electrons in the fourth. For U > U; the
fourth (conduction) band and third (valence) band are totally separated, leading to
a semiconductor or an insulator. For U, < U < U; the third and fourth bands do not
overlap at the same k points. Thus orbitals at the Fermi surface in the conduction
bands no longer connect to orbitals in the valence band, leading to semi-metallic
behavior.
2.4 Calculational Details
The « — ET,Cu(NCS), crystal is monoclinic with space group P2,, Z=2, and
lattice parameters a = 16.256A, b = 8.4564A, c = 13.143A and @ = 110.276° at
T = 298K."
This leads to reciprocal lattice vectors (1/A units) of
~ bxe 1
=? =? ——..0 11
Ba orl X% = 9 (0,50) (115)
= 47 V = 47 > h? ’
- bxe -1 1
=2 = 2 {—_,0,- ll
C= en V (= :) (11¢)
where V is the volume of the unit cell.
Leblanc et al.© performed GVB calculations on ET dimers to obtain the trans-
fer integrals, t;;, between ET molecules [using the experimental room temperature
structure’ of k- ET,Cu(NCS)>]. These t;; values are given in Table 1 using the no-
tation in Figure 8. We used these transfer integrals and corresponding experimental
room temperature crystal structure in our calculations.
Every conduction layer (be-plane) of ET molecules is sandwiched by the insulating
layers of anion C'u(NC'S), along the a-axis. Since the nonzero t;; are in the be-plane,
the relevant 2-D Brillouin zone is for the BC-plane. B and C are perpendicular to
each other with lengths B = 0.74300947A~! and C = 0.50971229A~!, leading to
23
a rectangular Brillouin zone. The point Y lies along B, Z lies along C, and M is
at the corner of the Brillouin zone (see Figure 4). Hence, Y = a (0,0.11825363, 0),
Z = 7 (0.02810889, 0, 0.07608613), M = 7 (0.02810889, 0.11825363, 0.07608613). The
distances between these points are d(T Z) = 0.25485614A~!, d(TY) = 0.37150473A~!,
and the ratio is a = 0.68601048. We used 150 points along B and 102 points along
C.
For each U, the eigenvalues and eigenvectors were solved at each k-point leading
to 4 x (150 x 102) = 61200 energies for up-spin electrons and 61200 energies for down-
spin electrons for the four bands of k — ET,Cu(NCS)». Since there are 3 up-spin
electrons and 3 down-spin electrons for each 4 ET molecules, the 45900 states with
lowest energies were occupied for each spin. The average densities were calculated
using (3) for both up-spin and down-spin electrons. This process was continued
iteratively by using the new densities in (5) to obtain new energies and eigenvectors
at each k-point for both up- and down-spins. The up and down energies at each
k-point were saved and compared with energies of previous iteration at the same k-
point for all k-points of the Brillouin zone. The process was considered converged
when the RMS error of the energies was less than 107° eV. This took ~15 iterations
for U = 0.3 eV, ~400 iterations for U = 0.678 eV, ~15 iterations for U = 1.0 eV. For
the converged wavefunctions, we calculated band occupancies, density of states, and
the Fermi surface.
3.0 Comparison with Experiment
3.1 Magnetic Experiments
Using the band structures from Section 2, we will examine the various experi-
mental results. In making the comparisons we should emphasize that the t;; values
are based on minimum basis GVB calculations using the room temperature crystal
structure. Thus exact quantitative agreement cannot be expected.
Thermopower*”’ and Hall effect measurements (vide infra) indicate that hole con-
duction dominates,’* that electronic conduction is parallel to the b axis and that hole
conduction is parallel to the c axis. This is consistent with U values between 0 and
24
Ustosed = 0.685195 eV, which give band structures with a Fermi surface that is closed
for holes and open sheets for electrons. As U increases above U, = 0.6780 eV the
closed hole orbits shrink toward Z while the open electrons orbits move toward Y.
The open electron orbits touch the BZ boundary at Y for Ugosea & 0.685195 eV, and
above this value? lead to closed orbits around the M point (this would disagree with
the SdH experiments discussed below). As U approaches U; the hole orbits shrink to
zero at Z while the electron orbits shrink to zero at M. At U; = 0.698960 eV the 3rd
and 4th band separate leading to a semiconductor for U > Uj.
At a temperature of 1 K and for magnetic fields above 8 T, Oshima et al.° observed
magnetoresistance [Shubnikov-de Haas (SdH)] oscillations related to the extremal area
A of the Fermi surface normal to the field direction. The relation is
1 27 e
\(a)=i (12)
where H is the magnitude of magnetic field. They concluded that the observed os-
cillations correspond to a cylindrical Fermi surface containing 18% of the Brillouin
zone. Sasaki et al.!® observed the SdH effect at 0.5 K and above 8 T (see Figure 2d)
and found that the observed oscillations correspond to 16.3% occupation of the Bril-
louin zone. From a band structure based on the extended Hiickel (EH) approximation
(with the room temperature crystal structure), Oshima et al.’ found a “closed region
of about 18%.” These results can be compared to our result of 16.9% for U = 0.678950
eV. The antiferromagnetic transition reduces the area of the closed part of the BZ.
This closed portion totally disappears for U > U;. Thus SdH experiments are in
reasonable agreement with our results for U = 0.678950 eV.
The occurrence of magnetic breakdown (jumping of electrons between the open
and closed orbits under the magnetic field) supports the topology of Fermi surface
found by us and others,*® namely a closed valence band orbit and an open conduction
band orbit (see Figure 2e).'° These jumps correspond to the interband (between the
third and the fourth bands) transitions. This suggests that U > U, = 0.6780 eV but
U < Usosead = 0.685195 eV.
25
For large gaps, the probability of magnetic breakdown electronic transitions is
very small. The estimate is that magnetic breakdown transitions do not occur if
hu. << E. , (13)
where w, is the cyclotron frequency and E, is the direct gap between the third and
the fourth band. Sasaki et al.1® observed magnetic breakdown at 0.5K for fields above
H = 227, obtaining a value of £2 = 0.3417 meV. We find £4 = 0.1291 meV, 0.3197
meV and 8.4913 meV for U = 0.678 eV, 0.678950 eV and 0.679 eV respectively. Thus
e is very sensitive to U for U > 0.678 eV.
These comparisons with experiment suggest that the band structure for Uj ~
0.678950 eV in Figures 3 and 4 best describes the « — ET,Cu(NCS)> salt. Both
Oshima et al.>, and LeBlanc et al.® also obtained overlapping bands and hence metallic
conductivity, leading to a similar qualitative picture of the band structure. However,
Extended Hiickel (EH) calculations do not describe®® the antiferromagnetic states,
and hence EH calculations cannot provide a quantitative explanation of the magnetic
breakdown experiments.
Our results (Uo): = 0.678950 eV) suggest a very small antiferromagnetic coupling
with a net spin density of about 0.018 spins on each ET. Such antiferromagnetic
behavior has not yet been detected for « — ET,Cu(NC'S),. However, for the related
(nonsuperconducting) compound « — (ET)2C'u[N(CN),|Cl, Miyagawa et al.'’ and
Welp et al.'® found such an antiferromagnetic state (it becomes superconducting with
T. = 12.8 K under pressure of 0.3 kbar). Miyagawa et al.!’ observed a moment of (0.4-
1.0) 2p/dimer for k—(ET).Cu[N(CN),|Cl. We believe that these results support our
conclusion that the normal state of k - ET,C'u( NCS)» is a weakly antiferromagnetic
conductor. These « — (ET) CuX salts are similar and expected to have similar band
structures. The dramatic differences in the conduction properties of these two crystals
could likely arise from small differences in t;; and U values due to the slight differences
in packing. Thus changing U to U; = 0.698960 eV for K— ET,Cu(NC'S)2, would lead
to an insulating antiferromagnetic ground state with a moment of 1.4 jz, /dimer (taking
26
g=2.0). The temperature dependence of the susceptibility . of Kk — ET,Cu( NCS)»
shown in Figure 2c could be due to this very weak antiferromagnetism with a net
spin density 0.04 per dimer for U,,, = 0.678950 eV. x decreases as temperature
decreases for T <100 K (antiferromagnetic behavior) and shows little temperature
dependence between 100 K and 300 K (Pauli paramagnetic behavior). The spin
unpairing could be reduced by small changes in the t;; and U values due to slight
changes in the packing (e.g., the observed change in the interlayer spacing, which
has a maximum around 100 K). In this case, the weak antiferromagnetic contribution
may decrease as temperature increases above 100 K, allowing Pauli paramagnetism
to become dominant. Thus, Hubbard model is able to describe the puzzling magnetic
properties of these x salts.
3.2 Resistivity Experiments
The lattice spacing dyg9 = a-sin@ shows a maximum around 100 K. This maximum
has been attributed! to structural changes in the hydrogen bonding between the
terminal -CH,C H)— group of ET and the anion layer -SCN-Cu-NCS-. The bond
length of Cu-N also shows an anomaly around 100 k.”°
The resistivity increase in Figure 2a is proportional to T? until it peaks at T = 100
K, and then decreases exponentially with 1/T like a semiconductor. The ratio of
R(100K)
» . . . . a1
RGR) imcreases when tensile stress is applied along b axis.** Where
resistivities
electron-electron scattering dominates, we expect the temperature dependence of the
conductivity to be proportional to 7 while if electron-phonon scattering dominates
we expect it to be proportional to 7 (for large T). Thus experiment implies that
electron-electron scattering dominates for low T.
One might attempt to explain the semiconducting behavior of the resistivity in
terms of polarons. Polaron formation is plausible for this salt, especially around the
central (TTF) part of ET molecule. Indeed, quantum chemistry calculations show
that the central part of ET molecule changes most upon ionization.?”?*?4 However,
the temperature dependence of the thermopower for T > 100K (see Figure 2f) argues
against polaron formation. For polarons in metallic systems, the thermopower should
27
be constant, 1.e.
Sx logo, (14a)
qd
where p is the electron density. For polarons in semiconductor systems, the ther-
mopower (see Figure 2f) behaves as”°
Svs
(14)
This second type temperature behavior is exhibited by «-(ET),Cu(NCS),2 for T >
100K, suggesting that the system is semiconductor-like. However, such semicon-
ducting behavior is not consistent with the constant Pauli susceptibility observed for
T > 100K, see Figure 2c.
Electron-phonon scattering has the same effect on both spins and hence does
not affect the magnetic susceptibility even though it may dramatically affect con-
ductivity. Hence, we conclude that electron-phonon scattering must be involved in
the anomalous resistivity. This can explain the semiconductor-like conductivity since
the relaxation time for electron-phonon scattering is proportional to r Thus only
electron-phonon scattering would avoid a thermally activated region.
Based on the UHF calculations and using these experimental results as a guide,
we propose the following model for this system:
a. Below 100K, this system is semi-metallic. This happens when U > U, = 0.6780
eV and U < U; = 0.698960 eV. At low temperatures, the phonon densities are
low, hence there are no transitions between valence and conduction bands. As the
temperature increases the electron-phonon couplings promote electronic transitions
between these bands.
b. Around 100K, the electrons begin coupling to phonons of the anion layer. Due
to this coupling, the resistivity has a peak.
The phonons of the anion layers may scatter the electrons between different ET
molecules. The anion layer is insulating, but electrons can be scattered from one ET
to a nearest-neighbor ET (on the same side of anion layer) by coupling to a phonon
of the anion layer. Hence, this interaction will depend on the vibrations of ET and
28
of the anion, the distance of ET molecules from the anion layer, and the electronic
structure. Changes in the ET-anion layer interaction will modify the electron-phonon
coupling. Thus this mechanism involving scattering of ET electrons by anion phonons
can also explain the interlayer spacing anomaly! and the tensile stress effects on the
resistance.”! Consequently this model suggests that the conductivity has the form
ar (15a)
for T < 100K (where a is a constant). For T > 100K the electrons begin to scatter
with the phonons of anion layer, leading to the form
—ég/kyT
Si. ~ ye
— (156)
where ¥ is a constant and ¢, is the gap between Fermi surface and the bottom of the
anion band. Thus we can understand the behavior of the resistivity in Figure 2a.
3.3 Hall Measurements
The Hall coefficient Ry is observed (see Figure 2b) to be positive, decreasing with
temperature as
but with a dramatic break in the slope at 60K. The magnitude of the slope is 33 times
larger below 60K than above! There is no discontinuity in Ry around 100K where
the resistivity exhibits a hump.”°
Figure 7 shows that the change in carrier density is negligible between T = 0 Ix
and 300 Kk for both U = 0 eV and U, = 0.678950 eV.
For the parabolic two-band model, the Hall coefficient. is given as
_ 1 Ply — MK,
7 ; l7a
(ele (oily + 40,9 (ara)
where n, p are the electron. hole carrier densities and pn, Wy are the corresponding
29
mobilities. Since n = p, this leads to
Le Lp — Mn (17)
Ry= _
plelc (Hp + bn)? — ple|c Mp + pn
Similarly, for the parabolic two-band model, the conductivity is given as:
S. = Sq + Sp = nlelpin + Pleldp = Plel(tin + Lp) - (17)
The relaxation times for electron-phonon and electron-electron scattering are pro-
portional to - and ae respectively. Thus we take the temperature dependence of the
mobilities, fn and up, to be
Lo Ly
nn (18a)
Ho , He
Lp = al + T2 . (18d)
This leads to
Hy + fe
and
1 fla — ba 20
Ry = _ T . 20
" Bele sia + wa fa + ba (20)
Comparing with (16) leads to
1 2
a= Po (21a)
plele’ fa + py
and
1 —
_ Ha — Mi (22a)
plelc’ 2 + bn
The dramatic change in the slope of Ry at T = 60K must arise from a large change
in Zo. This could arise from transitions between the third and fourth bands caused
by the increased electron-phonon scattering with increased T.
4.0 Discussion and Conclusions
We should emphasize that the band calculations presented here include significant
30
approximations. The Hubbard model is a crude model of the many-body electron
correlations and UHF is a simple mean field approximation to this model. We have
used first principles calculations’ to obtain the ¢;; matrix elements; however, these
calculations used a minimal basis set and the room temperature crystal structure.
In addition, we ignored the role of the anion layer and of deeper bands. Even so
there is only one adjustable parameter (U) in our theory and the optimum value
is close to a first principles estimate. Thus given the good agreement of the final
band properties with experiment, we believe that the resulting model is useful for
describing the electronic structure of this class of organic superconductors.
The Hubbard UHF calculations lead to the following conclusions for
K — (ET).Cu(NCS)>. We find that the system is semi-metallic and weakly anti-
ferromagnetic with a momentum gap between the third and fourth bands. As the
temperature is increased, the ET phonons couple the electrons in these two bands.
We believe that this explains the anomalous Hall effect and susceptibility. Above
100K, we believe that electron-phonon scattering by phonons of the anion layer scat-
ter the conduction electrons, leading to the anomalous temperature dependence in
the resistivity.
The calculated band structure is very sensitive to U. This may be partly an artifact
of the Hubbard-UHF approximation. However, it may also signify the frustration
between antiferromagnetic coupling, vibrations of the ET and electronic coupling
that is at the heart of the superconducting in these systems.”?
31
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Journal of The Physical Society of Japan 60, (1991) 1441.
Kusuhara H., Sakata Y., Ueba Y., Tada K., Kaji M., Solid State Communica-
tions 74, (1990) 251.
Demiralp E., Goddard W. A. III, J. Phys. Chem., 98, (1994) 9781.
23.
24.
25.
26.
27.
33
Demiralp E., Goddard W. A. III, Synthetic Metals, 72, 297 (1995).
Demiralp E., Dasgupta S., Goddard W. A. III, Journal of American Chemical
Society 117, 8154 (1995).
Chaikin P. M., in Organic Superconductivity, (Plenum Press 1990), 101.
Murata et al.° used the lack of an anomaly in Ry around 100K (which could be
caused by a change in the number of effective carriers) as an argument against
the gap formation model of Toyota et al.’
Saito G., Physica C 162-164, (1989) 577-582.
34
Table 1: Electron transfer matrix elements
Electron transfer matrix elements (t;;) from GVB calculations on ET dimers (from
reference 5). The nomenclature is explained in Figure 8. The units are in meV.
ty tg t3 ta ts t6
—162.9 —93.6 —92.8 32.3 —73.1 37.6
U (eV
36
Table 3: Characteristics of the band structure as a function of U
Characteristics of the band structure as a function of U. S,¢ is the spin unpairing
(see equation 9). N, is the occupation of the conduction band (it is the same for
both up-spin and down-spin bands). 6k is the momentum gap between closed orbits
(valence band) and open orbits (conduction band) of the Fermi surface; it is in units
of B/2 (the grid over k space has 75 points for B/2).
U (eV) N,. SNet bk State
0.000 0.1697 0.0000 & Metallic
0.300 0.1697 0.0001 * Metallic
0.670 0.1697 0.0003 & Metallic
0.674 0.1697 0.0007 4 Metallic
0.678 0.1697 0.0050 * Metallic
0.678950 0.1692 0.0183 & Semi-metallic
0.679 0.1434 0.1227 = Semi-metallic
0.680 0.1431 0.1238 fe Semi-metallic
0.685190 0.0796 0.2493 i Semi-metallic
0.685200 0.0511 0.2911 - Semi-metallic
0.690 0.0294 0.3221 - Semi-metallic
0.698960 0.0000 0.3615 - Semiconductor
0.800 0.0000 0.3874 - Semiconductor
1.000 0.0000 0.4218 - Semiconductor
oe) 0.0000 0.5000 - Insulator
37
Table 4: Energies from the band calculation
Energies (in meV) from the Hubbard-UHF band calculation on ET. All energies are
relative to the bottom of the first (lowest) band E? = 0. E? is the top of the fourth
(highest) band; this gives the total width of the ET HOMO band structure. Ep is
the Fermi energy (the chemical potential y, for zero temperature), E® is the energy of
the bottom of conduction (fourth) band E! is the energy of at the top of the valence
(third) band. E, is the direct energy gap between the third (valence) band and the
fourth (conduction) band. All results are for T = 0°.
U(eV) Et P ES, Et, E, =
0.000 844.8029 522.6820 442.4582 648.2950 8.1867 0.1282
0.300 844.8038 522.6751 442.4612 648.4528 «7.9128 ~—S «(0.1198
0.670 844.8049 522.6541 442.5829 648.5633 «7.7226 =~ 0.1141
0.674 844.8050 522.6398 442.6855 648.5620 7.7274 = 0.1143
0.6782 844.8223 522.6239 444.1521 648.3963 «8.2140 ~—S 0.1291
0.678950 845.0467 522.8909 448.8468 646.6708 «12.9284 —= 0.3197
0.679 855.3908 534.4193 491.2927 628.7004 «67.3640 ~—S 8.49113
0.680 855.6176 534.5743 491.9001 «628.5299 «68.0719 —«8.6682
0.685190° 886.6236 571.1884 555.7679 619.9479 122.9906 26.4828
0.685200° 900.3870 088.9825 578.9809 620.1448 131.4241 29.3256
0.690 912.3507 603.6132 597.9936 621.2653 139.6652 32.3160
0.6989607 929.5836 624.0354 624.0368 624.0339 148.4373 35.2914
0.800 968.6776 657.1822 677.9939 636.3704 158.9976 38.4676
1.000 1052.1515 728.6382 784.9779 672.2984 168.9013 39.1520
°Us,.
Us»: providing the best fit to the magnetic properties of k — ET,;Cu(NCS)po.
“Usosed == 0.685195 is between these two values.
OF
38
Figure Captions
Figure 1. The bis(ethylenedithio)tetrathiafulvalene molecule. This is denoted as
BEDT-TTF or simply as ET.
Figure 2.Experimental properties of k —- ET,Cu(NCS)o.
(a)Electrical resistivity, p is in bc plane. The maximum is at ~100 K.?"
(b) Hall coefficient (Ry) in the c direction with current parallel to b and magnetic
field parallel to a*. The large slope is from 20 to 60 K.'4
(c) The magnetic susceptibility with the field in the a*direction. The superconductor
transition is at 10.4 K .?”
(d) The magnetoresistance oscillations when the current and field are parallel to a*.*
(e) High field magnetoresistance oscillations. The arrows show the peak positions of
the high frequency F oscillations due to magnetic breakdown superimposed on the
low frequency Fy, oscillations.'®
(f) The thermoelectric power with the thermal gradient (a) parallel to c and (b)
parallel to b.??
Figure 3. The calculated Hubbard-UHF band structure as a function of U. Figures
a-h show the bands for spin-up electrons. For large U there are very slight differences
with the spin-down bands. This is shown in Figure 3j for U = 1.0 eV where there are
very small differences between the second and third bands for up-spin and down-spin,
especially along M —T in Figures 3i and 3}.
Figure 4. The Fermi surface as a function of U. The conduction (fourth) band
(electron states) has its lowest energy at M, and for U < 0.685190 eV leads to an
open Fermi surface in the MY direction, leading to the highest mobility in the c
direction. The valence (third) band (holes states) leads to a closed Fermi surface
centered around Z, leading to the highest mobility in the b direction. For U > U, =
0.678 eV the momentum gap between the third and fourth bands increases rapidly.
For U > U; = 0.698960 eV the lowest fourth band (electron) states (at M) are above
the highest third band (hole) states (at Z). This leads to semiconducting behavior.
Figure 5. Various properties as a function of U. (a) The conduction band occupancy
(N.) (for up-spin); the experimental value is about 0.163. Above U; = 0.698960
39
eV, the system is nonmetallic. (b) The (antiferromagnetic) the net spin density
(Snet); above U, = 0.678 eV the system is antiferromagnetic. (c) The momentum gap
(6k) between the third and fourth bands. (d) The magnetic breakdown factor oe
(assuming N. 4 0.0).
X marks the data point point for U,,: = 0.678950 eV.
Figure 6. Density of States for (a) U = 0 eV (b) U, = 0.6780 eV (c) Usp: = 0.678950
eV (d) U = 0.679 eV.
The dash lines show the contributions of the valence and the conduction bands.
Figure 7. Temperature dependence of the conduction band occupation for (a) U = 0
eV (b) Uy = 0.6780 eV (c) Usp = 0.678950 eV (d) U = 0.679 eV.
Figure 8. Definition of electron transfer matrix elements (t;;) for the band calcula-
tions of k — (BEDT — TTF),Cu(NCS).. Here aa’ and bb’ refer to the two pairs of
donors in each unit cell. See reference 5 for more details.
40
Figure 1. bis(ethylenedithio)tetrathiafulvalene, ET
41
om
1 aor =
3 3
\* P| -
r ; | c
1 2
x E 4 &
x t 7
= : Ww
B-l & 7 bd
«< &
gf ; rf
be - >
2 3 -
ig 3 a
=<
; x
-3 r i 1 roe
10 30 100 300
t/K
: d)
° 9
A ie
- Hg=30 kG
> 3F
oe] be
¥, 4
i
‘Pe
Oo fas a a re
“IE 1 ri J
0 100 200 200
TIK
Fa =625T
F,=3800T
20
28
Figure 2
THVT TITTY TET ELLE TLV IT TEL PTT PITT ITTY ITT
re) ae cae Cer Oe ee es Ge
20s 2 a oe ee a a
L.
FENVESTIVEVESUCTOCLCUSUOLTSTNCEOISTUCSESUSECSTN!
oO
100
TEMPERATURE (K)
Nn
fo]
MAGNETO RESISTANCE (orb. units)
6 5 10
MAGNETIC FIELD H(T)
-30¢
oO
o}
oO
Energy (meV)
-200 rT
-400 Oran
Tv if | i
-600
-600
400
Yt 2
a) U=0 eV
_ /~
E,
oY
ELL
400
Cc) U = 0.678950 eV
200 L
E,
ot YL [NZ
aah TS =~ |
-400 PONS
-600 T T T TT
400
U=0.685190 eV
2004 [-
soi _/ SA!
Figure 3
"7 .
400
200
-200
-400
-600
400
200
a / ae
-200+ ;
“ a
600 T T T T +
40
U=0.685200 eV
200
~200;
CA NS
-60
MOY rz Mor
b) U=0.678 eV
PNT
T qT q T
| qd) JN. U=0.679 eV /)
WL FX /
Energy (meV)
ewok
-400 4
-600 +
-800
-2004
-400-
-600 +
-B00
400
43
200 -
AG
400
2004
-800 ; I
40 i iL ii i
h) U =0.698960 eV
200 LN
oLY.
ed—_ / i
aod TNO
i a ae
-80
400 -—~
j) Lowe vs
200 LY Ee ed i
0 a7
-200 + r
eee a ees
-400 + L
-600 a Ae
U=0.0eV Z M
a) NL
| Y
U=0.678950eV Z M
r Y
U=0.685190eV Z M
e) NY”
AS
Figure 4
Ky
44
U=0.678eV
b) ~
~~
U=0.679eV
ay 7 \
gal
U=0.685200eV Z
| — I}
jo — |
\ RK
45
Conduction Band Occupancy, N
0.20
r=
oO
on
oO
0.05-
0.00
0.00
0.20
? @
0.60 0.80 1.00
U (eV)
Figure 5 (a)
46
Net
Net Spin Density, S
0.50
0.40-
0.30-
0.20-
0.10-
0.00 -
0.00
0.20 0.40 0.60 0.80 1.00
Figure 5 (b)
AT
o 9
. (o>)
© oO
| |
Momentum Gap ( 6 k)
(units of B/2)
0.20-
0.00 I
=a
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70
Figure 5(c)
U (eV)
48
0.2
0.4
| “ [
0.6 0.8 1
U (eV)
Figure 5 (d)
49
Density of States per spin (eV"')
20 | l
U =0.0 eV
15- Z
10- 7
57 o
-600 -400 -200 0 200 400
Energy (meV)
Figure 6(a)
00
Density of States per spin (eV)
20
15~
10-
U= 0.678 eV
-600
-400
| I
-200 0 200 400
Energy (meV)
Figure 6(b)
ol
Density of States per spin (eV)
20 | |
U =0.678950 eV
15~- LL
10- _
5 + lL.
0 1 I
-600 -400 -200 0 200 400
Energy (meV)
Figure 6(c)
52
Density of States per spin (eV”')
20 i | |
U =0.679 eV
15- -
10- L
5 - |
0 I T I I
-600 -400 -200 0 200 400
Energy (meV)
Figure 6(d)
53
Fourth (Conduction) Band Density
0.176
0.175 -
0.174 -
0.173 ~
0.172 -
0.171
0.17 -
U=0eV
0.1694
50
100 += 150
Figure 7 (a)
200 _250 300
Temperature (K)
o4
0.176 l
2 0.175~- U = 0.678 eV L
2 0.174- L
= 0.173~ L
2 0.172 -
= 0.171- a
£ 017————< ° :
0.169 . |
0 50 100 150 200 250 300
Figure 7(b)
Temperature (K)
59
Fourth (Conduction) Band Density
0.175
0.174 +
0.173 -
0.172 -
0.1715
0.17 -
0.169
U = 0.678950 eV
50
100
150
Figure 7(c)
200
250 300
Temperature (K)
56
Fourth (Conduction) Band Density
0.146
0.145 -
0.144 -
0.143
0.142 -
0.141 ~
0.14
U = 0.679 eV
50
100
150
Figure 7(d)
200
250 300
Temperature (K)
8 amn317
o7
ie)
o ad
eee +
I a ~~
m. or
We)
58
Chapter 3 Structural Calculations for Organic
Superconductors
59
3.1 Ab Initio and Semi-empirical Electronic Struc
tural Studies on BEDT —TTF
Abstract
We report electronic structure calculations for the organic molecule
bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF or ET), associated with the high-
est T, organic superconductors. The experimental structures exhibit considerable
disorder in the outer rings and concomitant uncertainty in the structures. We find
that Hartree-Fock (6-31G** basis set) calculations lead to results within 0.01A and 1°
of experiment for the ordered regions allowing us to predict to composite structures
expected to have this accuracy. We report optimized geometries and atomic charges
for ET, ET*, and ET +3 that should be useful for atomistic simulations.
60
1.0 Introduction
The transition temperature of organic superconductors has been in-
creasing since the discovery of (TMTSF),PF,.'* The highest T, organic supercon-
ductors involve the electron donor bis (ethylenedithio) tetrathiafulvalene (denoted as
BEDT-TTF or ET, shown in the Figure 1 in Chapter 2) complexed to appropriate
electron acceptors. Such systems show a variety of electronic behaviors (semiconduct-
ing, metallic, superconducting), but it is not totally clear how the superconductivity
is related to the structure, composition, electronic states, or vibrational states.”° We
are carrying out a series of theoretical studies aimed at establishing a basis for such
an understanding. In carrying out these studies we found a disturbing variation in
experimental structures from various sources. Since structure is the starting point
for many of our studies, we optimized the structures for both neutral and cation
ET molecules using both the ab initio Hartree-Fock (HF) method (with the 6-31G**
basis set)* and the semi-empirical modified neglect of differential overlap (MNDO)
method.°
The best organic superconductors have the composition (ET),,X, where
X is an electron acceptor.*? In most such crystals there are ET>' dimers, but some
crystals have HT+. Consequently, we report properties (structure, HOMO, LUMO
levels, atomic charges) for ET, ET+, and ET+?. By comparing theory and experi-
ment we were able to extract composite best structures.
2.0 Calculations
Using the HF method with a 6-31G** basis set, we optimized the struc-
tures of ET (Cy symmetry) and ET+ (Dy symmetry).4 With MNDO? we also opti-
mized the structures of ET and ET*, but it was necessary to distort the molecule
to C,. This led to deviations from the strict D. symmetry (less than 0.001A for
distances and less than 0.05 degrees for angles for neutral case, less than 0.005A for
distances and less than 0.5 degrees for angles for cation case).
3.0 Structural Results
3.1 Neutral ET
61
The crystal structure of neutral ET was reported by Kobayashi et
al? (See Figure 1). The monoclinic unit cell has four molecules grouped into two
dimers. Such dimer structures are observed in most crystals containing ET molecules.
The structural studies show a planar geometry for the central C2S4-like region; how-
ever, the terminal —C'H, — CH2— groups are nonplanar, leading to distortion and
(probably) disorder.
Averaging out the small differences of the bond lengths and the angles
of the neutral ET with C, symmetry , we take 7 independent atoms (See Figure 1 in
Chapter 2 for notation): Cc (central double bonded carbon), S$; (S in 5 membered
ring), Cs (double bonded C in 5 membered ring), Sg (S in 6 membered ring), Ce
(single bonded C in 6 membered ring), H, (H bonded to Cs but out of plane, axial),
H; (H bond to Cg but nearly in the plane, equatorial). The other atoms are obtained
from rotations about the x, y, or z axes.
From Table 1 we see that HF bond distances are within about 0.015A
of experiment while MNDO is within about 0.06A. The bond angles also agree well,
errors of about 1° for HF and about 3° for MNDO. In these comparisons with ex-
periment, we do not use the experimental positions for the terminal -CH) — CH)—
groups since they are disordered (thus the experimental Cg — Cs bond distance of
1.46A is clearly low by 0.07A). As a result the experimental data on the out-of-plane
distortions are not reliable.
Both theory and experiment show the Sg — Cs bond to be significantly
longer than Sg — C; (by 0.04 to 0.06A), indicating partial double bond character for
bonding of Sg to Cs = Cs,.
3.2 ETT
There are two crystal structures®® with essentially a full positive charge
on ET, ¢ — (ET)PFs and 6 — (ET)PFe (See Figure 2). We carried out full self-
consistent optimization of the structure for ET+ with both HF(6-31G**) and MNDO.
The structural parameters are compared with experiment in Table 2. Again there is
excellent agreement between HF and experiment. Of the experimental results, the
structure for e— (ET) PFs seems less reliable since the value obtained for the Cs —Ce-
62
bond is 1.32A (rather than the expected value of 1.53A). The 6 — (ET)PFs crystal
leads to R(Cg—C¢,) = 1.484A, short but in agreement with the structural data for the
neutral. Thus we compare these to the 6 crystal results. Comparing ET and ET™*,
we see that the structure changes occur only within the TTF portion, as indicated
in Figure 3. This suggests that ionization involves primarily the central C = C bond
followed by some delocalization of the Ss; 2 orbital onto Cc and some delocalization
of the Cs = Cs, bond onto Ss.
3.3 ET*?
The best organic superconductors have an average charge of +0.5 on
each ET. Examples include two important « phase crystals {«—(ET),Cu(NCS)» (see
Figure 2 and 3 in Chapter 1) and & — (ET).Cu[N(CN).|Br (see Figure 1 in Chap-
ter 1) and @ — (ET)2I3}.°~!! In Table 3 we compare the average of the calculated
structures for ET and ET* with the average structural parameters. The 5-membered
rings from all three crystal structures agree well with the theory (error of 0.01A for
HF); however, the 6-membered rings disagree substantially. Thus the C; — S, dis-
tance of the two « states have values of 1.744A and 1.749A while 6 — (ET) Iy has
1.712A. The experimental studies of ET lead to 1.742A while ET* of 6 — (ET)PF¢
leads to 1.736A. Thus we assume that there is some problem with the value 1.712A for
B—(ET)oI3. Also for the Sg—C¢ distance, the value of 1.740A for K~-(ET).Cu(NCS)»
differs substantially from all others (1.811A for the other « structure, 1.810A for
GB(ET )oI3, 1.809A for 6—(ET)PFe, and 1.802A for neutral ET). As a result only the
k— ET,CulN(CN).|Br structure seems to be without problems and we will use it for
all comparisons. Comparing the crystal structure for ET+? and the average experi-
mental values for ET and ET* (see Table 3), we find excellent agreement (Co = Co,
longer by 0.01A, S; — C; longer by 0.08A). This justifies the use of the average values
from the theory.
Comparing the theoretical values with experiment for ET*?, we also
find excellent agreement: bonds distance within 0.02A for HF and 0.08A for MNDO,
bond angles within 0.9° for HF and 5.6° for MNDO.
63
4.0 Charges
There are two ways to evaluate charges from electronic wavefunction.
Mulliken charges are based on the MO coefficients. Potential derived charges (PDQ)
are based on the electric field derived from the HF density.!° A set of atomic charges
are obtained that reproduce the same electric field outside the vdW radii. Since
the charges are used to predict packing energies and geometries in the crystal, PDQ
charges should be more useful. In addition we have applied an empirical method,
charge equilibration’ (denoted as QEq), which is based only on atomic parameters.
The PDQ charges were calculated using both the CHELPG model of
GAUSSIAN 92 and the PDQ module of the PS-GVB"® program. (For the latter, the
point charges fit not only the potential but also the ab initio dipole and quadrupole
moments.) There seems to be a numerical problem with GAUSSIAN 92 since the
calculated charges do not reflect the symmetry of the molecule (C2 for neutral ET
and D, for ET*) and of the wavefunction. We symmetry averaged the GAUSSIAN
92 results to obtain the values in Figure 4 (top line for each atom). PS-GVB leads to
symmetry consistent results (Figure 4, second line for each atom).
The main charge density is around the central part of the molecule.
This result is consistent with the STM experiment of « — (ET),Cu(NCS)»."* The
change between ET and ET*t suggests that during the electron transfer between ET
molecules, the vibrational modes of the central part of ET (center carbons and sulfurs
on the pentagon ring) may couple with the electrons. However, recent isotope exper-
iments exclude the importance of these kind of couplings for the superconductivity
of organic superconductors.1”!8
5.0 Ionization Potential
The orbital energies from HF and MNDO calculations on ET and ET*
are shown in Figure 5, 6 and Table 4. The HOMO and LUMO orbitals from HF are
plotted in Figure 7 and 8. The experimental gas-phase ionization potential is 6.21
eV.'8 Comparing the total energies from the HF calculations on the ion and neutral
leads to JP = 5.80 eV whereas the orbital energy of the neutral (Koopmans theorem)
64
leads to IP = 7.07 eV. This is typical, the correlation error is smaller for the positive
ion leading to too small an JP. Koopmans theorem assumes that the orbitals do not
relax upon ionization, leading to too large a value. The average value of 6.44 eV is
in good agreement with the experiment. From MNDO, the total energies leads to an
IP of 7.42 eV, whereas the orbital energy leads to IP = 8.09 eV.
6.0 Conclusion
The structures from HF calculations (6-31G** basis) are in excellent
agreement (0.01A and 1°) with the experimental data on the ordered regions of ET,
ET*, and ET+2. Thus one may use the HF structures to obtain full structural
parameters. The atomic charges should be useful in molecular dynamics simulations.
65
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Carlson K. D., Kini A. M., Schlueter J. A., Geiser U., Klemm R. A., Williams
J. M., Dudek J. D., Caleca M. A., Lykke K. R., Wang H. H., Ferraro J. R..
Physica C' 215, (1993) 195.
M. N. Ringnalda, J-M. Langlois, B. H. Greeley, T. V. Russo, R. P. Muller,
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Goddard II, and R. A. Freisner, PS-GVB v1.0, Schrédinger, Inc., Pasadena,
California, 1994.
67
Figure Captions
Figure 1. Crystal Structure of Neutral ET
Figure 2. Crystal Structure of 6 — (ET)PF,
Figure 3. Distance changes upon ionization: experiment and [theory (HF)].
Figure 4. Calculated charges for ET (right side) and ETT (left side). For each atom
the top entry is PDQ (Gaussian), the next is PDQ (PS-GVB), followed by Mulliken,
and QEq.
Figure 5. Molecular orbital energy levels for ET and ET* from HF/(6-31G**)
calculations.
Figure 6. Molecular orbital energy levels for ET and ET* from MNDO calculations.
positive lobes are dark gray and the negative lobes are light gray. The isosurfaces are
for an amplitude of 0.02 in atomic units.
Figure 8. The LUMO orbital of neutral ET molecule from HF calculations. The
positive lobes are dark gray and the negative lobes are light gray. The isosurfaces are
for an amplitude of 0.02 in atomic units.
68
Table 1: Structural Parameters for Neutral ET
From Theory (HF and MNDO) and Experiment (Reference 3) (See Figure 1 in Chap-
ter 2 for notation).
a. Bond distances (A) for neutral E.
Number Xtal HF/6-31G** =MNDO
Co = Coz l 1.319 1.326 1.356
Co — Ss 4 1.758 1.771 1.695
Ss — Cs 4 1.754 1.774 1.688
Cs = Cs, 2 1.332 1.323 1.367
Cs — Se 4 1.742 1.767 1.670
Se — Ce 4 1.802 1.814 1.737
Cs — Coz 2 (1.462)° 1.523 1.530
C. — A; 4 - 1.084 1.112
C. — Ho 4 - 1.081 1.112
RMS Error 0.00 0.017 0.063
b. Bond angles (degrees) for neutral ET .
Number Xtal HF /6-31G** MNDO
Co - Co — Ss 4 123.2 123.71 123.38
Co — Ss — Cs 4 94.5 94.55 97.66
Ss — Cs — Cs: 4 117.3 117.22 115.72
Cs, — Cs — S¢ 4 126.6 128.45 127.19
C's — Sg — Ce 4 100.8 100.81 106.35
Se - Ca — Coz 4 (116.8)? 113.17 115.91
Cg: ~ Ce — H; 4 - 109.75 109.43
Ce: — Cy — Hy 4 - 110.83 109.97
RMS Error 0.00 0.86 2.96
*Crystallographic value is not accurate and was not included in the RMS error cal-
culation.
69
Table 2: Structural Parameters for ET*
From Theory (HF and MNDO) and Experiment (« — (ET)PF, from Reference 6a
and 6 — (ET)PFe from reference 6b]. (See Figure 1 in Chapter 2 for notation).
a. Bond distances (A) for ETt.
Number ¢—(ET)PFs 6—(ET)PFs HF/6-31G** MNDO
Co = Coz 1 1.396 1.381 1.389 1.398
Co - Ss 4 1.715 1.721 1.721 1.672
Ss —C; 4 1.743 1.732 1.751 1.676
Cs = Cs, 2 1.353 1.351 1.336 1.389
Cs — Ss 4 1.727 1.736 1.765 1.663
Ss —Cz 2 1.761 1.809 1.816 1.741
Cy — Coz 4 (1.32)¢ (1.484)2 1.523 1.529
Cy — H; 4 - - 1.083 1.112
Cs — H, 4 - - 1.080 1.112
RMS Error 0.024 0.00 0.017 0.059
b.Bond angles (degrees) for ET*.
Number ¢—(ET)PFs 6-(ET)PFs HF/6-31G** MNDO
Co —-Co — Ss 4 122.1 122.5 122.76 122.65
Co — Ss — Cs 4 95.8 95.9 96.33 97.47
Ss ~ Cs — Cs, 4 116.3 116.6 116.42 115.17
Cs, — Cs — Se 4 127.3 126.9 128.83 126.95
C's — Sg — Cs 4 116.4 100.6 100.50 106.54
Se — Co — Coz 4 (126.9)° (115.0) 113.10 115.69
Cs. — Ce — H; 4 - - 109.74 109.54
Ce: — Ce — Ho 4 - - 111.46 110.34
RMS Error 2.5 0.0 0.9 2.8
“Crystallographic value is not accurate and was not included in the RMS error cal-
culation.
70
Table 3: Structural Parameters for ET?
The theory values (HF and MNDO) use the average from ET and ET+. The ex-
perimental structures (references 9,10 and 11) are Xl= « — (ET).Cu(NCS), X2=
K ~ (ET),Cu[N(CN).]Br and X3=6 — (ET)oI3. It appears that X2 is most consis-
tent (See Figure 1 in Chapter 2 for notation).
a. Bond distances (A) for ET?.
No. X1 X2 X3 Av. Exp* HF/6-31G*** MNDO*
Co=Coz 1 1.364 1.360 1.363 1.350 1.358 1.377
Co — Ss 4 1.742 1.741 1.733 1.740 1.746 1.684
Ss — Cs 4 1.758 1.751 1.770 1.743 1.762 1.682
Cs=Cs, 2 1.339 1.343 1.360 1.342 1.330 1.378
Cs — Se 4 1.744 1.749 1.712 1.739 1.766 1.666
Se — Ce 4 1.740 1.811 1.810 1.806 1.815 1.739
Ce — Coz 2 (1.522)? 1.485)’ (1.304) (1.473)° 1.523 1.530
Ce — H; 4 - - - - 1.084 1.112
Ce — H, 4 - - - - 1.081 1.112
RMS Error 0.033 0.0 0.020 0.007 0.011 0.066
b.Bond angles (degrees) for ET? .
No. Xl X2 X3 Av. Exp* HF/6-31G*** MNDO*
Co-—Co-Ss 4 123.00 122.41 122.39 122.8 123.24 123.02
Co-Ss-Cs 4 96.22 95.14 95.78 95.2 95.44 97.56
Ss—C3—-Cs, 4 116.75 117.13 116.36 117.0 116.82 115.46
Cs: -Cs—Se 4 127.66 128.85 128.93 126.8 128.64 127.07
Cs—Se-Ce 4 102.78 100.86 100.61 100.7 100.66 106.42
S6—Ce—Ce: 4 (115.56)? (115.10)® (123.46)® 115.9° 113.14 115.80
Co: -Ce—H; 4 - - - - 109.74 109.48
Ce: -Ce-H, 4 - - - - 111.14 110.16
RMS Error¢ 1.16 0.0 0.43 0.9 0.44 2.94
“From neutral ET and 6 — (ET)+(PF%)~ crystals.
’Crystallographic value is not accurate and not included in the RMS error
calculation.
“Average of the optimized ET and ET+ structures.
71
Table 4: Energies for ET and ET* from HF and MNDO calculations
ET ETt
HF /6-31G** §=MNDO? HF/6-31G** = MNDO?
Total Energy (Hartree) -3563.3607 -118.4398 -3563.1476 -118.1670
Orbital Energies (eV)
HOMO -7.073 -8.093 -10.929 -12.056
LUMO 2.748 -0.519 -4.540 -6.711
Ionization Potential (eV)
ET*-ET (total energy difference) 5.80 7.42
Koopmans Theorem 7.07 8.09
Experiment? 6.21 6.21
“For MNDO, total energy is the sum of the electronic energy of valence elec-
trons and core-core repulsions.
’Reference 13.
72
Hoo N Sw SNH
iH
CL UL —/' Ne Cw Zs
0-023] (0.002
0.019
[0.013] [0.000]
[0.002]
Figure 3. Distance changes (in A) upon ionization: experiment and [theory (HF)]