1. Observation of 2D-magnesium-intercalated gallium nitride superlattices. 査読有り

    Wang J, Cai W, Lu W, Lu S, Kano E, Agulto VC, Sarkar B, Watanabe H, Ikarashi N, Iwamoto T, Nakajima M, Honda Y, Amano H

    Nature   631 巻 ( 8019 ) 頁： 67 - 72   2024年7月

  2. 15 GHz GaN Hi-Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W 査読有り

    Kawasaki, S; Kumabe, T; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H

    IEEE TRANSACTIONS ON ELECTRON DEVICES   71 巻 ( 3 ) 頁： 1408 - 1415   2024年3月

  3. Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping 査読有り

    Kumabe T., Yoshikawa A., Kawasaki S., Kushimoto M., Honda Y., Arai M., Suda J., Amano H.

    IEEE Transactions on Electron Devices     2024年

  4. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz 査読有り

    Kawasaki, S; Kumabe, T; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H

    IEEE ELECTRON DEVICE LETTERS   44 巻 ( 8 ) 頁： 1328 - 1331   2023年8月

  5. Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes 査読有り

    Kwon, W; Kawasaki, S; Watanabe, H; Tanaka, A; Honda, Y; Ikeda, H; Iso, K; Amano, H

    IEEE ELECTRON DEVICE LETTERS   44 巻 ( 7 ) 頁： 1172 - 1175   2023年7月

  6. Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN 査読有り Open Access

    Kumabe, T; Kawasaki, S; Watanabe, H; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   122 巻 ( 25 )   2023年6月

  7. High In content nitride sub-micrometer platelet arrays for long wavelength optical applications 査読有り

    Cai, WT; Furusawa, Y; Wang, J; Park, JH; Liao, YQ; Cheong, HJ; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

    APPLIED PHYSICS LETTERS   121 巻 ( 21 )   2022年11月

  8. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy 査読有り Open Access

    Ohnishi, K; Fujimoto, N; Nitta, S; Watanabe, H; Lu, S; Deki, M; Honda, Y; Amano, H

    JOURNAL OF APPLIED PHYSICS   132 巻 ( 14 )   2022年10月

  9. Laser slice thinning of GaN-on-GaN high electron mobility transistors 査読有り Open Access

    Tanaka, A; Sugiura, R; Kawaguchi, D; Wani, Y; Watanabe, H; Sena, H; Ando, Y; Honda, Y; Igasaki, Y; Wakejima, A; Ando, Y; Amano, H

    SCIENTIFIC REPORTS   12 巻 ( 1 ) 頁： 7363   2022年5月

  10. Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection 査読有り Open Access

    Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Schowalter, LJ; Sasaoka, C; Amano, H

    APPLIED PHYSICS EXPRESS   15 巻 ( 4 )   2022年4月

  11. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg 査読有り Open Access

    Lu, S; Deki, M; Wang, J; Ohnishi, K; Ando, Y; Kumabe, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   119 巻 ( 24 )   2021年12月

  12. Smart-cut-like laser slicing of GaN substrate using its own nitrogen 査読有り Open Access

    Tanaka, A; Sugiura, R; Kawaguchi, D; Yui, T; Wani, Y; Aratani, T; Watanabe, H; Sena, H; Honda, Y; Igasaki, Y; Amano, H

    SCIENTIFIC REPORTS   11 巻 ( 1 ) 頁： 17949   2021年9月

  13. Comparative study of quantum efficiency for InGaN photocathodes using various alkali metals Open Access

    Idei M., Koizumi A., Sato D., Nishitani T., Honda Y., Amano H.

    Journal of Vacuum Science and Technology B   44 巻 ( 1 )   2026年1月

  14. Characterization of Quaternary Al<sub>x</sub>Ga<sub>1-(x+y)</sub>In<sub>y</sub>N (<i>x</i> ≈ 0.5 and <i>y</i> ≤ 0.12) Metalorganic Vapor Phase Epitaxy Growth Focusing on Unintentionally Incorporated Impurities

    Yamada, Y; Kumabe, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   262 巻 ( 12 )   2025年12月

  15. All-GaN-Based Monolithic MIS-HEMT Integrated Micro-LED Pixels for Active-Matrix Displays

    Furusawa, Y; Cai, WT; Cheong, HJ; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   222 巻 ( 23 )   2025年12月

  16. Electron Spin Resonance and Photoluminescence Studies of Carbon-Induced Point Defects in GaN: Influence of Doping Concentration and Method

    Honda, A; Watanabe, H; Kato, T; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   262 巻 ( 12 )   2025年12月

  17. On-State Current Increasing Structure of Source-Connected Polarization Superjunction Transistor

    Kokubo E., Watanabe H., Deki M., Tanaka A., Nitta S., Honda Y., Amano H.

    Physica Status Solidi A Applications and Materials Science   222 巻 ( 23 )   2025年12月

  18. Understanding the Ga Polar n-GaN Surface after Mg Diffusion Process

    Singh, S; Wang, J; Watanabe, H; Fregolent, M; De Santi, C; Meneghini, M; Badami, O; Asubar, JT; Amano, H; Sarkar, B

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   222 巻 ( 23 )   2025年12月

  19. Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001). Open Access

    Yang X, Pristovsek M, Nitta S, Honda Y, Ohtake A, Sakuma Y, Hiroto T, Ishida T, Ikezawa M, Guo Q, Amano H

    Advanced science (Weinheim, Baden-Wurttemberg, Germany)   12 巻 ( 46 ) 頁： e09354   2025年12月

  20. Complete-Mapping Bidirectional Light Communication Using Monolithic III-Nitrides Based Photonic Circuit

    Xie M., Qi Z., Wang L., Jiang Y., Gao X., Liang Y., Yuan J., Gao X., Shi Z., Liu Y., Amano H., Guo Y., Wang Y.

    ACS Photonics   12 巻 ( 10 ) 頁： 5630 - 5638   2025年10月

  21. On barrier-free vertical GaN PN junction diode enabled by ion-implantation and ex-situ Mg diffusion process

    Singh S., Kwon W., Li X., Wang J., Watanabe H., Honda Y., Amano H., Sarkar B.

    Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers   64 巻 ( 9 )   2025年9月

  22. SiN interlayer to improve external quantum efficiency and reduce sidewall recombination for blue (micro) light-emitting diodes

    Pristovsek M., Park J.H., Kwon W., Cheong H., Amano H.

    Applied Physics Letters   127 巻 ( 7 )   2025年8月

  23. Advancements in ohmic contact technology for AlGaN/GaN high-electron-mobility transistors

    Kim H.Y., Horng R.H., Amano H., Seong T.Y.

    Progress in Quantum Electronics   102 巻   2025年7月

  24. Role of Sidewall Conditions in the External Quantum Efficiency of InGaN-Based Micro-LEDs

    Park, JH; Pristovsek, M; Han, DP; Seong, TY; Amano, H

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   19 巻 ( 6 )   2025年6月

  25. Comparison of chip size effects of thin film GaN-based μLEDs fabricated by plasma etching and ion implantation processing Open Access

    Wan T.C., Tsai P.H., Lin H.W., Lin C.C., Wuu D.S., Amano H., Seong T.Y., Horng R.H.

    Applied Surface Science Advances   27 巻   2025年6月

  26. Characteristics of 2DEG generated at the heterointerface of an AlN/GaN structure grown on an AlN substrate using metal organic vapor phase epitaxy

    Yoshikawa, A; Kumabe, T; Sugiyama, S; Arai, M; Suda, J; Amano, H

    JOURNAL OF APPLIED PHYSICS   137 巻 ( 19 )   2025年5月

  27. Quantum efficiency characteristics of low-threading-dislocation-density InGaN photocathode grown on GaN substrate

    Idei, M; Sato, D; Koizumi, A; Nishitani, T; Honda, Y; Amano, H

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   43 巻 ( 3 )   2025年5月

  28. Modeling and Designing a GaN-Growth Reactor With Halogen-Free Vapor Phase Epitaxy: NH<sub>3</sub> Decomposition at the Catalytic Surface of Components to Replicate Parasitic Polycrystal Formation

    Shimazu, H; Nishizawa, SI; Nitta, S; Amano, H; Nakamura, D

    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING   38 巻 ( 2 ) 頁： 311 - 323   2025年5月

  29. Vertical GaN p-n diode with deeply etched mesas by contactless photo-electrochemical etching 査読有り

    Toyoda, H; Kwon, W; Watanabe, H; Tsukamoto, R; Furusawa, Y; Itoh, Y; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   18 巻 ( 3 ) 頁： 036503 - 036503   2025年3月

  30. Normally-off AlGaN/GaN MIS-HEMTs with high 2DEG mobility enabled by shallow recess and oxygen plasma treatment

    Ishiguro, M; Sekiyama, K; Baratov, A; Maeda, S; Igarashi, T; Tajuddin, NSBA; Islam, N; Terai, S; Yamamoto, A; Kuzuhara, M; Sarkar, B; Amano, H; Asubar, JT

    JAPANESE JOURNAL OF APPLIED PHYSICS   64 巻 ( 2 )   2025年2月

  31. Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment

    Kwon, W; Itoh, Y; Tanaka, A; Watanabe, H; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   18 巻 ( 1 )   2025年1月

  32. High-speed modulation of probe current using scanning electron microscope with photocathode technology

    Nishitani T., Sato D., Arakawa Y., Niimi K., Yasuda M., Koizumi A., Iijima H., Honda Y., Amano H.

    Proceedings of SPIE the International Society for Optical Engineering   13426 巻   2025年

  33. Technological Advancements in AlGaN-Based Deep Ultraviolet Laser Diodes

    Kushimoto M., Zhang Z., Yoshikawa A., Aoto K., Honda Y., Sasaoka C., Amano H.

    Cs Mantech 2025 2025 International Conference on Compound Semiconductor Manufacturing Technology     2025年

  34. Advances in Deep Ultraviolet Semiconductor Laser: From Material Challenges to Device Performance

    Kushimoto M., Zhang Z., Yoshikawa A., Aoto K., Honda Y., Sasaoka C., Amano H.

    2025 Conference on Lasers and Electro Optics Europe and European Quantum Electronics Conference CLEO Europe Eqec 2025     2025年

  35. Magnesium Intercalation in Gallium Nitride for Enhanced P-Type Doping and Device Performance

    Wang J., Amano H.

    Proceedings of the 16th IEEE International Conference on Electron Devices and Solid State Circuits Edssc 2025     頁： 52 - 54   2025年

  36. Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy 査読有り

    Ohnishi K., Hamasaki K., Nitta S., Fujimoto N., Watanabe H., Honda Y., Amano H.

    Journal of Crystal Growth   648 巻   2024年12月

  37. InGaN-based blue and red micro-LEDs: Impact of carrier localization

    Park J.H., Pristovsek M., Han D.P., Kim B., Lee S.M., Hanser D., Parikh P., Cai W., Shim J.I., Lee D.S., Seong T.Y., Amano H.

    Applied Physics Reviews   11 巻 ( 4 )   2024年12月

  38. (Ultra)wide bandgap semiconductor heterostructures for electronics cooling

    Cheng Z., Huang Z., Sun J., Wang J., Feng T., Ohnishi K., Liang J., Amano H., Huang R.

    Applied Physics Reviews   11 巻 ( 4 )   2024年12月

  39. Growth and Characterization of High Internal Quantum Efficiency Semipolar (101̅3) GaN-Based Light Emitting Diodes

    Hu N., Park J.H., Wang J., Amano H., Pristovsek M.

    ACS Applied Electronic Materials   6 巻 ( 11 ) 頁： 7960 - 7971   2024年11月

  40. 窒化物半導体結晶の魅力と人・社会・地球への貢献 Open Access

    天野 浩

    日本結晶学会誌   66 巻 ( Supplement ) 頁： s2 - s2   2024年11月

  41. Study on Degradation of Deep-Ultraviolet Laser Diode

    Zhang, ZY; Yoshikawa, A; Kushimoto, M; Sasaoka, C; Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   221 巻 ( 21 )   2024年11月

  42. Experimental study of gain characteristics in relation to quantum-well width of deep-ultraviolet laser diodes

    Zhang Z., Kushimoto M., Yoshikawa A., Aoto K., Sasaoka C., Amano H.

    Applied Physics Letters   125 巻 ( 18 )   2024年10月

  43. Discovering the incorporation limits for wurtzite AlP<inf>y</inf>N<inf>1−y</inf> grown on GaN by metalorganic vapor phase epitaxy 査読有り

    Yang X., Furusawa Y., Kano E., Ikarashi N., Amano H., Pristovsek M.

    Applied Physics Letters   125 巻 ( 13 )   2024年9月

  44. Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure 査読有り

    Sikder, B; Hossain, T; Xie, QY; Niroula, J; Rajput, NS; Teo, KH; Amano, H; Palacios, T; Chowdhury, N

    APPLIED PHYSICS LETTERS   124 巻 ( 24 )   2024年6月

  45. Recent advances in micro-pixel light emitting diode technology 査読有り

    Park, JH; Pristovsek, M; Amano, H; Seong, TY

    APPLIED PHYSICS REVIEWS   11 巻 ( 2 )   2024年6月

  46. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers 査読有り

    Chichibu, SF; Shima, K; Uedono, A; Ishibashi, S; Iguchi, H; Narita, T; Kataoka, K; Tanaka, R; Takashima, S; Ueno, K; Edo, M; Watanabe, H; Tanaka, A; Honda, Y; Suda, J; Amano, H; Kachi, T; Nabatame, T; Irokawa, Y; Koide, Y

    JOURNAL OF APPLIED PHYSICS   135 巻 ( 18 )   2024年5月

  47. Metastable atomic-ordered configurations for Al<sub>1/2</sub>Ga<sub>1/2</sub>N predicted by Monte-Carlo method based on first-principles calculations 査読有り

    Gueriba, JS; Mizuseki, H; Cadatal-Raduban, M; Sarukura, N; Kawazoe, Y; Nagasawa, Y; Hirano, A; Amano, H

    JOURNAL OF PHYSICS-CONDENSED MATTER   36 巻 ( 13 )   2024年4月

  48. Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy 査読有り

    Honda, A; Watanabe, H; Takeuchi, W; Honda, Y; Amano, H; Kato, T

    JAPANESE JOURNAL OF APPLIED PHYSICS   63 巻 ( 4 )   2024年4月

  49. Improving the Barrier Height of N-Polar GaN Schottky Diodes Using Mg-Diffusion Process 査読有り

    Sarkar, B; Wang, J; Watanabe, H; Amano, H

    IEEE TRANSACTIONS ON ELECTRON DEVICES   71 巻 ( 3 ) 頁： 1416 - 1420   2024年3月

  50. Sn-doped n-type GaN layer with high electron density of 1020 cm-3 grown by halide vapor phase epitaxy 査読有り

    Hamasaki, K; Ohnishi, K; Nitta, S; Fujimoto, N; Watanabe, H; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   628 巻   2024年2月

  51. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate 査読有り

    Watanabe, H; Nitta, S; Ando, Y; Ohnishi, K; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   628 巻   2024年2月

  52. Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlGaN-based deep-ultraviolet laser diodes 査読有り

    Zhang Z., Yoshikawa A., Kushimoto M., Aoto K., Sasaoka C., Amano H.

    Applied Physics Letters   124 巻 ( 6 )   2024年2月

  53. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing 査読有り

    Ito, S; Sato, S; Bockowski, M; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Yoshida, K; Minagawa, H; Hagura, N

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   547 巻   2024年2月

  54. Impurity reduction in lightly doped <i>n</i>-type gallium nitride layer grown via halogen-free vapor-phase epitaxy 査読有り

    Kimura, T; Shimazu, H; Kataoka, K; Itoh, K; Narita, T; Uedono, A; Tokuda, Y; Tanaka, D; Nitta, S; Amano, H; Nakamura, D

    APPLIED PHYSICS LETTERS   124 巻 ( 5 )   2024年1月

  55. Droop and light extraction of InGaN-based red micro-light-emitting diodes 査読有り

    Park, JH; Pristovsek, M; Cai, WT; Kumabe, T; Choi, SY; Lee, DS; Seong, TY; Amano, H

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   39 巻 ( 1 )   2024年1月

  56. Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector 査読有り

    Nakagawa, H; Hayashi, K; Miyazawa, A; Honda, Y; Amano, H; Aoki, T; Nakano, T

    SENSORS AND MATERIALS   36 巻 ( 1 ) 頁： 169 - 176   2024年

  57. Light-Stimulated Artificial Synapses with Accelerating Photopic Adaption Based on III-Nitride Heterojunction Transistor 査読有り

    Yan J., Sun Z., Fang L., Yan Y., Shi Z., Shi F., Jiang C., Choi H.W., Amano H., Liu Y., Wang Y.

    ACS Photonics     2024年

  58. SEM imaging of high aspect ratio trench by selectively controlling the electron beam irradiation using photocathode 査読有り

    Arakawa, Y; Niimi, K; Otsuka, Y; Sato, D; Koizumi, A; Shikano, H; Iijima, H; Nishitani, T; Honda, Y; Amano, H

    METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVIII   12955 巻   2024年

  59. Photoelectron beam from semiconductor photocathodes leading to new inspection technologies

    Nishitani T., Arakawa Y., Niimi K., Otsuka Y., Sato D., Koizumi A., Shikano H., Iijima H., Honda Y., Amano H.

    Proceedings of SPIE - The International Society for Optical Engineering   12955 巻   2024年

  60. Local voltage contrast changes in MOSFET using scanning electron microscopy with photoelectron beam technology

    Sato, D; Arakawa, Y; Niimi, K; Fukuroi, K; Tajiri, Y; Koizumi, A; Shikano, H; Iijima, H; Nishitani, T; Honda, Y; Amano, H

    METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVIII   12955 巻   2024年

  61. 単結晶AlN 基板を用いたUV-C 波長域レーザーダイオード Open Access

    張 梓懿, 久志本 真希, 吉川 陽, 笹岡 千秋, 天野 浩

    レーザー研究   52 巻 ( 1 ) 頁： 6   2024年

  62. Anisotropic hole transport along [0001] and [1120] direction in p-doped (1010) GaN 査読有り Open Access

    Lin, YY; Wang, J; Pristovsek, M; Honda, Y; Amano, H

    JOURNAL OF APPLIED PHYSICS   134 巻 ( 23 )   2023年12月

  63. Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN 査読有り Open Access

    Kumabe, T; Kawasaki, S; Watanabe, H; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   123 巻 ( 25 )   2023年12月

  64. Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process 査読有り Open Access

    Sarkar, B; Wang, J; Badami, O; Pramanik, T; Kwon, W; Watanabe, H; Amano, H

    APPLIED PHYSICS EXPRESS   16 巻 ( 12 )   2023年12月

  65. Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs 査読有り Open Access

    Yoshikawa, A; Zhang, ZY; Kushimoto, M; Aoto, K; Sasaoka, C; Amano, H

    APPLIED PHYSICS LETTERS   123 巻 ( 22 )   2023年11月

  66. Multiplexing of bias-controlled modulation modes on a monolithic III-nitride optoelectronic chip 査読有り

    Zhang, H; Ye, ZQ; Yan, JB; Shi, F; Shi, ZM; Li, DB; Liu, YH; Amano, H; Wang, YJ

    OPTICS LETTERS   48 巻 ( 19 ) 頁： 5069 - 5072   2023年10月

  67. Dislocation Suppresses Sidewall-Surface Recombination of Micro-LEDs 査読有り

    Park, JH; Pristovsek, M; Cai, WT; Cheong, HJ; Kang, CM; Lee, DS; Seong, TY; Amano, H

    LASER & PHOTONICS REVIEWS   17 巻 ( 10 )   2023年10月

  68. UV/DUV light emitters 査読有り Open Access

    Khan, A; Kneissl, M; Amano, H

    APPLIED PHYSICS LETTERS   123 巻 ( 12 )   2023年9月

  69. Impact of graphene state on the orientation of III-nitride 査読有り

    Park, JH; Hu, N; Park, MD; Wang, J; Yang, X; Lee, DS; Amano, H; Pristovsek, M

    APPLIED PHYSICS LETTERS   123 巻 ( 12 )   2023年9月

  70. Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field-Effect Transistors 査読有り

    Inahara, D; Matsuda, S; Matsumura, W; Okuno, R; Hanasaku, K; Kowaki, T; Miyamoto, M; Yao, YZ; Ishikawa, Y; Tanaka, A; Honda, Y; Nitta, S; Amano, H; Kurai, S; Okada, N; Yamada, Y

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   220 巻 ( 16 )   2023年8月

  71. Inactivation characteristics of a 280 nm Deep-UV irradiation dose on aerosolized SARS-CoV-2 査読有り Open Access

    Takamure, K; Iwatani, Y; Amano, H; Yagi, T; Uchiyama, T

    ENVIRONMENT INTERNATIONAL   177 巻   頁： 108022   2023年7月

  72. Stress relaxation of AlGaN on nonpolar m-plane GaN substrate 査読有り Open Access

    Lin, YY; Sena, H; Frentrup, M; Pristovsek, M; Honda, Y; Amano, H

    JOURNAL OF APPLIED PHYSICS   133 巻 ( 22 )   2023年6月

  73. Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro-LEDs 査読有り Open Access

    Park, JH; Pristovsek, M; Cai, WT; Cheong, HJ; Tanaka, A; Furusawa, Y; Han, DP; Seong, TY; Amano, H

    ADVANCED OPTICAL MATERIALS   11 巻 ( 10 )   2023年5月

  74. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current-voltage characteristic 査読有り

    Lu, S; Deki, M; Kumabe, T; Wang, J; Ohnishi, K; Watanabe, H; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   122 巻 ( 14 )   2023年4月

  75. Simultaneous light emission and detection of an AlGaInP quantum well diode 査読有り Open Access

    Ye, ZQ; Zhang, H; Gao, XM; Fu, K; Zeng, HB; Liu, YH; Wang, YJ; Amano, H

    AIP ADVANCES   13 巻 ( 4 )   2023年4月

  76. 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters. 査読有り Open Access

    Jmerik V, Nechaev D, Semenov A, Evropeitsev E, Shubina T, Toropov A, Yagovkina M, Alekseev P, Borodin B, Orekhova K, Kozlovsky V, Zverev M, Gamov N, Wang T, Wang X, Pristovsek M, Amano H, Ivanov S

    Nanomaterials (Basel, Switzerland)   13 巻 ( 6 )   2023年3月

  77. A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes 招待有り 査読有り Open Access

    Nagata, K; Matsubara, T; Saito, Y; Kataoka, K; Narita, T; Horibuchi, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Takeuchi, T; Amano, H

    CRYSTALS   13 巻 ( 3 )   2023年3月

  78. Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN-Transition from Dissolution Stage to Growth Stage Conditions. 査読有り Open Access

    Schimmel S, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H

    Materials (Basel, Switzerland)   16 巻 ( 5 )   2023年2月

  79. Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates 査読有り

    Cai, WT; Wang, J; Park, JH; Furusawa, Y; Cheong, HJ; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 巻 ( 2 )   2023年2月

  80. 平板捕集電極をもつ電気集塵装置の粒子捕集特性 Open Access

    高牟礼 光太郎, 岩谷 靖雅, 天野 浩, 八木 哲也, 内山 知実

    年次大会   2023 巻 ( 0 ) 頁： S054-05   2023年

  81. MOVPE法によるGaNエピタキシャル成長における炭素混入に関する数値解析とその評価 Open Access

    向山 裕次, 渡邊 浩崇, 新田 州吾, 飯塚 将也, 天野 浩

    計算力学講演会講演論文集   2023.36 巻 ( 0 ) 頁： OS-1406   2023年

  82. Metal Stop Laser Drilling for Blind via Holes of GaN-on-GaN Devices 査読有り Open Access

    Sasaoka C., Ando Y., Takahashi H., Ikarashi N., Amano H.

    Physica Status Solidi (A) Applications and Materials Science     2023年

  83. Photoelectron beam technology for SEM imaging with pixel-specific control of irradiation beam current

    Nishitani T., Arakawa Y., Noda S., Koizumi A., Sato D., Shikano H., Iijima H., Honda Y., Amano H.

    Proceedings of SPIE - The International Society for Optical Engineering   12496 巻   2023年

  84. Novel Electron Beam Technology using InGaN Photocathode for High-Throughput Scanning Electron Microscope Imaging

    Sato, D; Koizumi, A; Shikano, H; Noda, S; Otsuka, Y; Yasufuku, D; Mori, K; Iijima, H; Nishitani, T; Honda, Y; Amano, H

    METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVII   12496 巻   2023年

  85. Development in AlGaN homojunction tunnel junction deep UV LEDs

    Nagata K., Anada S., Saito Y., Kushimoto M., Honda Y., Takeuchi T., Amano H.

    Proceedings of SPIE - The International Society for Optical Engineering   12441 巻   2023年

  86. Demonstration of AlN-based Vertical p-n Diodes with Dopant-Free Distributed-Polarization Doping

    Kumabe T., Yoshikawa A., Kushimoto M., Honda Y., Arai M., Suda J., Amano H.

    Technical Digest - International Electron Devices Meeting, IEDM     2023年

  87. Challenges and opportunities of nitride light emitting devices by HVPE thanks to a stable Mg source

    Matsumoto K., Ohnishi K., Amano H.

    Proceedings of SPIE - The International Society for Optical Engineering   12441 巻   2023年

  88. Evaluation of Switching Characteristics of High Breakdown Voltage GaN-PSJ Transistors at Liquid Nitrogen Temperature

    Deki M., Kawarabayashi H., Honda Y., Amano H.

    AIAA Aviation and Aeronautics Forum and Exposition, AIAA AVIATION Forum 2023     2023年

  89. GaN substrate cut-out process and GaN on GaN device thinning process with laser slicing Open Access

    Tanaka A., Matsushima K., Yui T., Aratani T., Hara K., Kawaguchi D., Watanabe H., Kanemura T., Nagasato Y., Nagaya M., Honda Y., Wakejima A., Ando Y., Onda S., Suda J., Amano H.

    Cs Mantech 2023 2023 International Conference on Compound Semiconductor Manufacturing Technology     2023年

  90. Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars 査読有り Open Access

    Sato, SI; Li, S; Greentree, AD; Deki, M; Nishimura, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Gibson, BC; Ohshima, T

    SCIENTIFIC REPORTS   12 巻 ( 1 ) 頁： 21208   2022年12月

  91. Characteristics of collection and inactivation of virus in air flowing inside a winding conduit equipped with 280 nm deep UV-LEDs Open Access

    Takamure, K; Sakamoto, Y; Iwatani, Y; Amano, H; Yagi, T; Uchiyama, T

    ENVIRONMENT INTERNATIONAL   170 巻   頁： 107580   2022年12月

  92. Scanning electron microscope imaging by selective e-beaming using photoelectron beams from semiconductor photocathodes 査読有り

    Nishitani, T; Arakawa, Y; Noda, S; Koizumi, A; Sato, D; Shikano, H; Iijima, H; Honda, Y; Amano, H

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   40 巻 ( 6 )   2022年12月

  93. Miniature optical fiber curvature sensor via integration with GaN optoelectronics Open Access

    Shi F., Zhang H., Ye Z., Tang X., Qin F., Yan J., Gao X., Zhu H., Wang Y., Liu Y., Amano H.

    Communications Engineering   1 巻 ( 1 )   2022年12月

  94. Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing 査読有り Open Access

    Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Sasaoka, C; Schowalter, LJ; Amano, H

    APPLIED PHYSICS LETTERS   121 巻 ( 22 )   2022年11月

  95. Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes 査読有り Open Access

    Kushimoto, M; Zhang, ZY; Yoshikawa, A; Aoto, K; Honda, Y; Sasaoka, C; Schowalter, LJ; Amano, H

    APPLIED PHYSICS LETTERS   121 巻 ( 22 )   2022年11月

  96. Electrical Characteristics of Thermally Stable Ag-Pd-Cu Alloy Schottky Contacts on <i>n-</i>Al<sub>0.6</sub>Ga<sub>0.4</sub>N Open Access

    Sim, KB; Kim, SK; Seong, TY; Amano, H

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   11 巻 ( 11 )   2022年11月

  97. Substitutional diffusion of Mg into GaN from GaN/Mg mixture 査読有り Open Access

    Itoh, Y; Lu, S; Watanabe, H; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Amano, H

    APPLIED PHYSICS EXPRESS   15 巻 ( 11 )   2022年11月

  98. Adsorption structure deteriorating negative electron affinity under the H<sub>2</sub>O environment 査読有り

    Kashima, M; Ishiyama, S; Sato, D; Koizumi, A; Iijima, H; Nishitani, T; Honda, Y; Amano, H; Meguro, T

    APPLIED PHYSICS LETTERS   121 巻 ( 18 )   2022年10月

  99. Monolithic GaN optoelectronic system on a Si substrate 査読有り

    Zhang, H; Yan, JB; Ye, ZQ; Shi, F; Piao, JL; Wang, W; Gao, XM; Zhu, HB; Wang, YJ; Liu, YH; Amano, H

    APPLIED PHYSICS LETTERS   121 巻 ( 18 )   2022年10月

  100. The photoemission characteristics of a NEA InGaN photocathode by simultaneously supplying Cs and O2 査読有り Open Access

    Kashima, M; Itokawa, Y; Kanai, T; Sato, D; Koizumi, A; Iijima, H; Nishitani, T; Honda, Y; Amano, H; Meguro, T

    APPLIED SURFACE SCIENCE   599 巻   2022年10月

  101. High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN 査読有り Open Access

    Schimmel, S; Salamon, M; Tomida, D; Neumeier, S; Ishiguro, T; Honda, Y; Chichibu, SF; Amano, H

    MATERIALS   15 巻 ( 17 )   2022年9月

  102. N極性面AlGaN/AlNヘテロ接合型FETの性能改善 Open Access

    稲原 大輔, 松田 駿佑, 松村 航, 奥野 椋, 花咲 光基, 小脇 岳士, 宮本 弥凪, 金崎 蓮, 齊藤 俊介, 藤井 開, 倉井 聡, 岡田 成仁, 姚 永昭, 石川 由加里, 田中 敦之, 新田 州吾, 本田 善央, 天野 浩, 山田 陽一

    応用物理学会学術講演会講演予稿集   2022.2 巻 ( 0 ) 頁： 2869 - 2869   2022年8月

  103. Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal-organic vapor phase epitaxy 査読有り

    Hu, N; Avit, G; Pristovsek, M; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   121 巻 ( 8 )   2022年8月

  104. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates 査読有り Open Access

    Ohnishi, K; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   592 巻   2022年8月

  105. Improved performance of deep ultraviolet AlGaN-based light-emitting diode by reducing contact resistance of Al-based reflector 査読有り

    Sim K.B., Jin J.Y., Kim S.K., Ko Y.J., Hwang G.W., Seong T.Y., Amano H.

    Journal of Alloys and Compounds   910 巻   2022年7月

  106. Weak metastability of Al<i> <sub>x</sub> </i>Ga<sub>1-<i>x</i> </sub>N (<i>x</i>=13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN with dense macrosteps 査読有り

    Hirano, A; Nagasawa, Y; Ippommatsu, M; Sako, H; Hashimoto, A; Sugie, R; Honda, Y; Amano, H; Kojima, K; Chichibu, SF

    APPLIED PHYSICS EXPRESS   15 巻 ( 7 )   2022年7月

  107. Space-Charge Profiles and Carrier Transport Properties in Dopant-Free GaN-Based p-n Junction Formed by Distributed Polarization Doping 査読有り

    Kumabe, T; Kawasaki, S; Watanabe, H; Nitta, S; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   16 巻 ( 7 )   2022年7月

  108. Dual-peak electroluminescence spectra generated from Al <i><sub>n</sub></i> <sub>/12</sub>Ga<sub>1-<i>n</i>/12</sub>N (<i>n</i>=2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells 査読有り

    Nagasawa, Y; Kojima, K; Hirano, A; Ippommatsu, M; Honda, Y; Amano, H; Chichibu, SF

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   55 巻 ( 25 )   2022年6月

  109. Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors. Open Access

    Tanaka A, Sugiura R, Kawaguchi D, Wani Y, Watanabe H, Sena H, Ando Y, Honda Y, Igasaki Y, Wakejima A, Ando Y, Amano H

    Scientific reports   12 巻 ( 1 ) 頁： 8175   2022年5月

  110. Interplay of sidewall damage and light extraction efficiency of micro-LEDs 査読有り

    Park, JH; Pristovsek, M; Cai, WT; Cheong, H; Kumabe, T; Lee, DS; Seong, TY; Amano, H

    OPTICS LETTERS   47 巻 ( 9 ) 頁： 2250 - 2253   2022年5月

  111. <p>The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer</p> 査読有り

    Park Jeong-Hwan, Cai Wentao, Cheong Heajeong, Ushida Yasuhisa, Lee Da-Hoon, Ando Yuto, Furusawa Yuta, Honda Yoshio, Lee Dong-Seon, Seong Tae-Yeon, Amano Hiroshi

    JOURNAL OF APPLIED PHYSICS   131 巻 ( 15 )   2022年4月

  112. "Regrowth-free" fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration 査読有り Open Access

    Kumabe, T; Watanabe, H; Ando, Y; Tanaka, A; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   15 巻 ( 4 )   2022年4月

  113. Mechanism and enhancement of anti-parasitic-reaction catalytic activity of tungsten-carbide-coated graphite components for the growth of bulk GaN crystals 査読有り Open Access

    Nakamura, D; Iida, K; Horibuchi, K; Aoki, Y; Takahashi, N; Mori, Y; Moriyama, M; Nitta, S; Amano, H

    APPLIED PHYSICS EXPRESS   15 巻 ( 4 )   2022年4月

  114. Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED 査読有り Open Access

    Matsubara, T; Nagatat, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   15 巻 ( 4 )   2022年4月

  115. Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode 査読有り Open Access

    Nagata K., Anada S., Miwa H., Matsui S., Boyama S., Saito Y., Kushimoto M., Honda Y., Takeuchi T., Amano H.

    Applied Physics Express   15 巻 ( 4 )   2022年4月

  116. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process 査読有り Open Access

    Liao Y., Chen T., Wang J., Cai W., Ando Y., Yang X., Watanabe H., Tanaka A., Nitta S., Honda Y., Chen K.J., Amano H.

    Applied Physics Letters   120 巻 ( 12 )   2022年3月

  117. Inhomogeneous Barrier Height Characteristics of <i>n</i>-Type AlInP for Red AlGaInP-Based Light-Emitting Diodes 査読有り

    Cha, JS; Lee, DH; Sim, KB; Lee, TJ; Seong, TY; Amano, H

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   11 巻 ( 3 )   2022年3月

  118. Visualization of depletion layer in AlGaN homojunction p-n junction 査読有り Open Access

    Nagata, K; Anada, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Yamamoto, K; Hirayama, T; Amano, H

    APPLIED PHYSICS EXPRESS   15 巻 ( 3 )   2022年3月

  119. 加熱下でのNEA活性化におけるInGaNの電子放出特性 Open Access

    鹿島 将央, 糸川 佑也, 金井 俊也, 佐藤 大樹, 小泉 淳, 飯島 北斗, 西谷 智博, 本田 善央, 天野 浩, 目黒 多加志

    応用物理学会学術講演会講演予稿集   2022.1 巻 ( 0 ) 頁： 1343 - 1343   2022年2月

  120. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN 査読有り Open Access

    Itoh, Y; Watanabe, H; Ando, Y; Kano, E; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Ikarashi, N; Amano, H

    APPLIED PHYSICS EXPRESS   15 巻 ( 2 )   2022年2月

  121. Defect characterization of { 10 1 ¯ 3 } GaN by electron microscopy 査読有り Open Access

    Kusch G., Frentrup M., Hu N., Amano H., Oliver R.A., Pristovsek M.

    Journal of Applied Physics   131 巻 ( 3 )   2022年1月

  122. Perspective on thermal conductance across heterogeneously integrated interfaces for wide and ultrawide bandgap electronics 査読有り

    Cheng, Z; Graham, S; Amano, H; Cahill, DG

    APPLIED PHYSICS LETTERS   120 巻 ( 3 )   2022年1月

  123. Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate 査読有り Open Access

    Kushimoto, M; Zhang, ZY; Honda, Y; Schowalter, LJ; Sasaoka, C; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   61 巻 ( 1 )   2022年1月

  124. Ohmic Contact to <i>p</i>-Type GaN Enabled by Post-Growth Diffusion of Magnesium 査読有り Open Access

    Wang, J; Lu, S; Cai, WT; Kumabe, T; Ando, Y; Liao, YQ; Honda, Y; Xie, YH; Amano, H

    IEEE ELECTRON DEVICE LETTERS   43 巻 ( 1 ) 頁： 150 - 153   2022年1月

  125. Frontier electronics in memory of Professor Isamu Akasaki 招待有り

    Amano, H

    GALLIUM NITRIDE MATERIALS AND DEVICES XVII   12001 巻   2022年

  126. An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources 査読有り Open Access

    Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B

    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   10 巻   頁： 797 - 807   2022年

  127. Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems

    Otoki Y., Shibata M., Mishima T., Ohta H., Mori Y., Imanishi M., Tamura S., Kidera K., Takino J., Okayama Y., Watanabe K., Okamoto N., Honda Y., Yamamoto M., Shiozaki K., Amano H.

    2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022     頁： 237 - 242   2022年

  128. 呼気中のエアロゾルを遮断するデスクトップ型エアカーテン装置の開発 Open Access

    高牟礼 光太郎, 坂本 恭晃, 八木 哲也, 岩谷 靖雅, 天野 浩, 内山 知実

    年次大会   2022 巻 ( 0 ) 頁： S055-10   2022年

  129. 深紫外線LEDを搭載したつづら折り流路を通過するウイルスの壁面付着および不活化性能 Open Access

    高牟礼 光太郎, 岩谷 靖雅, 坂本 恭晃, 八木 哲也, 天野 浩, 内山 知実

    年次大会   2022 巻 ( 0 ) 頁： S055-11   2022年

  130. 卓上型エアカーテン装置によるエアロゾル粒子の遮断および捕集性能 Open Access

    高牟礼 光太郎, 小林 大亮, 武藤 広将, 春木 健杜, 天野 浩, 八木 哲也, 岩谷 靖雅, 内山 知実

    流体工学部門講演会講演論文集   2022 巻 ( 0 ) 頁： OS03-22   2022年

  131. Uniting a III-Nitride Transmitter, Waveguide, Modulator, and Receiver on a Single Chip 査読有り

    Xie, MY; Jiang, Y; Gao, XM; Cai, W; Yuan, JL; Zhu, HB; Wang, YJ; Zeng, XF; Zhang, ZY; Liu, YH; Amano, H

    ADVANCED ENGINEERING MATERIALS   23 巻 ( 12 )   2021年12月

  132. Discrete wavelengths observed in electroluminescence originating from Al<inf>1/2</inf>Ga<inf>1/2</inf>N and Al<inf>1/3</inf>Ga<inf>2/3</inf>N created in nonflat AlGaN quantum wells 査読有り

    Nagasawa Y., Kojima K., Hirano A., Sako H., Hashimoto A., Sugie R., Ippommatsu M., Honda Y., Amano H., Chichibu S.F.

    Journal of Physics D: Applied Physics   54 巻 ( 48 )   2021年12月

  133. Multiple electron beam generation from InGaN photocathode 査読有り

    Sato Daiki, Shikano Haruka, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   39 巻 ( 6 )   2021年12月

  134. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions 査読有り

    Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B

    IEEE TRANSACTIONS ON ELECTRON DEVICES   68 巻 ( 12 ) 頁： 6059 - 6064   2021年12月

  135. Vertical GaN p<SUP>+</SUP>-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy (vol 119, 152102, 2021) 査読有り Open Access

    Ohnishi, K; Kawasaki, S; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   119 巻 ( 20 )   2021年11月

  136. OBITUARY Isamu Akasaki 査読有り

    Amano, H

    PHYSICS TODAY   74 巻 ( 11 ) 頁： 63 - 63   2021年11月

  137. Vertical GaN p<SUP>+</SUP>-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy 査読有り Open Access

    Ohnishi, K; Kawasaki, S; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   119 巻 ( 15 )   2021年10月

  138. Effective neutron detection using vertical-type BGaN diodes 査読有り

    Nakano, T; Mochizuki, K; Arikawa, T; Nakagawa, H; Usami, S; Honda, Y; Amano, H; Vogt, A; Schuett, S; Fiederle, M; Kojima, K; Chichibu, SF; Inoue, Y; Aoki, T

    JOURNAL OF APPLIED PHYSICS   130 巻 ( 12 )   2021年9月

  139. Effects of Current, Temperature, and Chip Size on the Performance of AlGaInP-Based Red Micro-Light-Emitting Diodes with Different Contact Schemes

    Lee, DH; Lee, SY; Shim, JI; Seong, TY; Amano, H

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   10 巻 ( 9 )   2021年9月

  140. Quasi-ballistic thermal conduction in 6H-SiC 査読有り Open Access

    Cheng, Z; Lu, W; Shi, J; Tanaka, D; Protik, NH; Wang, S; Iwaya, M; Takeuchi, T; Kamiyama, S; Akasaki, I; Amano, H; Graham, S

    MATERIALS TODAY PHYSICS   20 巻   2021年9月

  141. Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing 査読有り Open Access

    Sena, H; Tanaka, A; Wani, Y; Aratani, T; Yui, T; Kawaguchi, D; Sugiura, R; Honda, Y; Igasaki, Y; Amano, H

    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING   127 巻 ( 9 )   2021年9月

  142. High-Gain Gated Lateral Power Bipolar Junction Transistor 査読有り Open Access

    Wang, J; Xie, YH; Amano, H

    IEEE ELECTRON DEVICE LETTERS   42 巻 ( 9 ) 頁： 1370 - 1373   2021年9月

  143. Stable electrical performance of AlGaInP-based red micro-light emitting diode by controlling interfacial morphologies of metal contacts

    Lee, DH; Seong, TY; Amano, H

    JOURNAL OF ALLOYS AND COMPOUNDS   872 巻   頁： 159629   2021年8月

  144. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers

    Matsukura, Y; Inazu, T; Pernot, C; Shibata, N; Kushimoto, M; Deki, M; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   14 巻 ( 8 )   2021年8月

  145. Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations Open Access

    Nagata K., Makino H., Miwa H., Matsui S., Boyama S., Saito Y., Kushimoto M., Honda Y., Takeuchi T., Amano H.

    Applied Physics Express   14 巻 ( 8 )   2021年8月

  146. Impact of gate electrode formation process on Al<inf>2</inf>O<inf>3</inf>/GaN interface properties and channel mobility

    Ando Y., Deki M., Watanabe H., Taoka N., Tanaka A., Nitta S., Honda Y., Yamada H., Shimizu M., Nakamura T., Amano H.

    Applied Physics Express   14 巻 ( 8 )   2021年8月

  147. Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy

    Ohnishi, K; Amano, Y; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   566 巻   2021年7月

  148. 赤﨑勇先生のご逝去を悼む

    天野 浩

    応用物理   90 巻 ( 7 ) 頁： 455 - 455   2021年7月

  149. 赤﨑　勇先生を偲んで Open Access

    天野 浩

    日本物理学会誌   76 巻 ( 7 ) 頁： 478 - 478   2021年7月

  150. Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

    Liao Y., Chen T., Wang J., Ando Y., Cai W., Yang X., Watanabe H., Hirotani J., Tanaka A., Nitta S., Honda Y., Chen K.J., Amano H.

    Japanese Journal of Applied Physics   60 巻 ( 7 )   2021年7月

  151. Isamu Akasaki: The Pioneer of Blue LEDs and his Collaboration with <i>pss</i> OBITUARY Open Access

    Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   218 巻 ( 14 )   2021年7月

  152. Non-polar true-lateral GaN power diodes on foreign substrates Open Access

    Wang, J; Yu, G; Zong, H; Liao, YQ; Lu, WF; Cai, WT; Hu, XD; Xie, YH; Amano, H

    APPLIED PHYSICS LETTERS   118 巻 ( 21 )   2021年5月

  153. The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation. Open Access

    Park JH, Yang X, Lee JY, Park MD, Bae SY, Pristovsek M, Amano H, Lee DS

    Chemical science   12 巻 ( 22 ) 頁： 7713 - 7719   2021年5月

  154. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching Open Access

    Kumabe, T; Ando, Y; Watanabe, H; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   60 巻 ( SB ) 頁： SBBD03   2021年5月

  155. Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate Open Access

    Kushimoto, M; Zhang, ZY; Sugiyama, N; Honda, Y; Schowalter, LJ; Sasaoka, C; Amano, H

    APPLIED PHYSICS EXPRESS   14 巻 ( 5 ) 頁： 051003   2021年5月

  156. Micro-Light Emitting Diode: From Chips to Applications

    Parbrook, PJ; Corbett, B; Han, J; Seong, TY; Amano, H

    LASER & PHOTONICS REVIEWS   15 巻 ( 5 ) 頁： 2000133   2021年5月

  157. Discrete AlN mole fraction of n/12 (n = 4-8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

    Nagasawa Y., Hirano A., Ippommatsu M., Sako H., Hashimoto A., Sugie R., Honda Y., Amano H., Akasaki I., Kojima K., Chichibu S.F.

    Journal of Applied Physics   129 巻 ( 16 ) 頁： 164503   2021年4月

  158. Experimental demonstration of GaN IMPATT diode at X-band

    Kawasaki, S; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Nitta, S; Honda, Y; Arai, M; Amano, H

    APPLIED PHYSICS EXPRESS   14 巻 ( 4 ) 頁： 046501   2021年4月

  159. Optimization of Ni/Ag-Based Reflectors to Improve the Performance of 273 nm Deep Ultraviolet AlGaN-Based Light Emitting Diodes

    Sim, KB; Kim, SK; Lee, HS; Lee, SY; Seong, TY; Amano, H

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   10 巻 ( 4 ) 頁： 045005   2021年4月

  160. Numerical Simulation of Ammonothermal Crystal Growth of GaN-Current State, Challenges, and Prospects Open Access

    Schimmel, S; Tomida, D; Ishiguro, T; Honda, Y; Chichibu, S; Amano, H

    CRYSTALS   11 巻 ( 4 ) 頁： 356   2021年4月

  161. Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography Open Access

    Avit, G; Robin, Y; Liao, YQ; Nan, H; Pristovsek, M; Amano, H

    SCIENTIFIC REPORTS   11 巻 ( 1 ) 頁： 6754   2021年3月

  162. Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

    Kangawa, Y; Kusaba, A; Kempisty, P; Shiraishi, K; Nitta, S; Amano, H

    CRYSTAL GROWTH & DESIGN   21 巻 ( 3 ) 頁： 1878 - 1890   2021年3月

  163. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

    Yamada, T; Ando, Y; Watanabe, H; Furusawa, Y; Tanaka, A; Deki, M; Nitta, S; Honda, Y; Suda, J; Amano, H

    APPLIED PHYSICS EXPRESS   14 巻 ( 3 ) 頁： 036505   2021年3月

  164. Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth-A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution Open Access

    Schimmel Saskia, Tomida Daisuke, Saito Makoto, Bao Quanxi, Ishiguro Toru, Honda Yoshio, Chichibu Shigefusa, Amano Hiroshi

    CRYSTALS   11 巻 ( 3 ) 頁： 1 - 27   2021年3月

  165. Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication Open Access

    Yasuda, H; Nishitani, T; Ichikawa, S; Hatanaka, S; Honda, Y; Amano, H

    QUANTUM BEAM SCIENCE   5 巻 ( 1 ) 頁： 5   2021年3月

  166. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer Open Access

    Liu, T; Watanabe, H; Nitta, S; Wang, J; Yu, G; Ando, Y; Honda, Y; Amano, H; Tanaka, A; Koide, Y

    APPLIED PHYSICS LETTERS   118 巻 ( 7 ) 頁： 072103   2021年2月

  167. Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020) Open Access

    Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T

    OPTICAL MATERIALS EXPRESS   11 巻 ( 2 ) 頁： 524 - 524   2021年2月

  168. 3D GaN Power Switching Electronics: A Revival of Interest in ELO

    Wang, J; Amano, H; Xie, YH

    2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)     2021年

  169. Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs Open Access

    Jadhav A., Ozawa T., Baratov A., Asubar J.T., Kuzuhara M., Wakejima A., Yamashita S., Deki M., Honda Y., Roy S., Amano H., Sarkar B.

    IEEE Journal of the Electron Devices Society   9 巻   頁： 570 - 581   2021年

  170. Development of UV-C laser diodes on AlN substrate

    Kushimoto M.

    Proceedings of SPIE - The International Society for Optical Engineering   11686 巻   2021年

  171. Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: A model based on rate equations

    Piva F.

    Proceedings of SPIE - The International Society for Optical Engineering   11686 巻   2021年

  172. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al<sub>2</sub>O<sub>3</sub>/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

    Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H

    APPLIED PHYSICS LETTERS   117 巻 ( 24 ) 頁： 242104   2020年12月

  173. The 2020 UV emitter roadmap Open Access

    Amano H., Collazo R., De Santi C., Einfeldt S., Funato M., Glaab J., Hagedorn S., Hirano A., Hirayama H., Ishii R., Kashima Y., Kawakami Y., Kirste R., Kneissl M., Martin R., Mehnke F., Meneghini M., Ougazzaden A., Parbrook P.J., Rajan S., Reddy P., Römer F., Ruschel J., Sarkar B., Scholz F., Schowalter L.J., Shields P., Sitar Z., Sulmoni L., Wang T., Wernicke T., Weyers M., Witzigmann B., Wu Y.R., Wunderer T., Zhang Y.

    Journal of Physics D: Applied Physics   53 巻 ( 50 ) 頁： 503001   2020年12月

  174. Detailed analysis of Ga-rich current pathways created in an n-Al<inf>0.7</inf>Ga<inf>0.3</inf>N layer grown on an AlN template with dense macrosteps

    Nagasawa Y., Hirano A., Ippommatsu M., Sako H., Hashimoto A., Sugie R., Honda Y., Amano H., Akasaki I., Kojima K., Chichibu S.F.

    Applied Physics Express   13 巻 ( 12 ) 頁： 124001   2020年12月

  175. Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices

    Seong, TY; Amano, H

    SURFACES AND INTERFACES   21 巻   頁： 100765   2020年12月

  176. State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods Open Access

    Evropeitsev, EA; Kazanov, DR; Robin, Y; Smirnov, AN; Eliseyev, IA; Davydov, VY; Toropov, AA; Nitta, S; Shubina, TV; Amano, H

    SCIENTIFIC REPORTS   10 巻 ( 1 ) 頁： 19048   2020年11月

  177. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation

    Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M

    PHOTONICS RESEARCH   8 巻 ( 11 ) 頁： 1786 - 1791   2020年11月

  178. Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy Open Access

    Robin, Y; Bournet, Q; Avit, G; Pristovsek, M; André, Y; Trassoudaine, A; Amano, H

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   35 巻 ( 11 ) 頁： 115005   2020年11月

  179. Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

    Yang, X; Pristovsek, M; Nitta, S; Liu, YH; Honda, Y; Koide, Y; Kawarada, H; Amano, H

    ACS APPLIED MATERIALS & INTERFACES   12 巻 ( 41 ) 頁： 46466 - 46475   2020年10月

  180. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes

    Zhang, ZY; Kushimoto, M; Horita, M; Sugiyama, N; Schowalter, LJ; Sasaoka, C; Amano, H

    APPLIED PHYSICS LETTERS   117 巻 ( 15 ) 頁： 152104   2020年10月

  181. Optical properties of neodymium ions in nanoscale regions of gallium nitride Open Access

    Sato S.I., Deki M., Watanabe H., Nitta S., Honda Y., Nishimura T., Gibson B.C., Greentree A.D., Amano H., Ohshima T.

    Optical Materials Express   10 巻 ( 10 ) 頁： 2614 - 2623   2020年10月

  182. Single-chip imaging system that simultaneously transmits light

    Wang Y., Gao X., Fu K., Qin F., Zhu H., Liu Y., Amano H.

    Applied Physics Express   13 巻 ( 10 )   2020年10月

  183. WPTシステム実現のための 高周波GaNパワーデバイス 招待有り 査読有り

    天野　浩

    電子情報通信学会誌　IEICE誌   103 巻 ( 10 ) 頁： 1016 - 1022   2020年10月

  184. Single-chip imaging system that simultaneously transmits light

    Wang, YJ; Gao, XM; Fu, K; Qin, FF; Zhu, HB; Liu, YH; Amano, H

    APPLIED PHYSICS EXPRESS   13 巻 ( 10 )   2020年10月

  185. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

    Sato S.i., Deki M., Nishimura T., Okada H., Watanabe H., Nitta S., Honda Y., Amano H., Ohshima T.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   479 巻   頁： 7 - 12   2020年9月

  186. Low interface state densities at Al<sub>2</sub>O<sub>3</sub>/GaN interfaces formed on vicinal polar and non-polar surfaces Open Access

    Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H

    APPLIED PHYSICS LETTERS   117 巻 ( 10 ) 頁： 102012   2020年9月

  187. Design and characterization of a low-optical-loss UV-C laser diode

    Zhang Z., Kushimoto M., Sakai T., Sugiyama N., Schowalter L.J., Sasaoka C., Amano H.

    Japanese Journal of Applied Physics   59 巻 ( 9 )   2020年9月

  188. Design and characterization of a low-optical-loss UV-C laser diode

    Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 9 )   2020年9月

  189. Increasing the Luminescence Efficiency of Long-Wavelength (In,Ga)N Quantum Well Structures by Electric Field Engineering Using an (Al,Ga)N Capping Layer

    Vichi Stefano, Robin Yoann, Sanguinetti Stefano, Pristovsek Markus, Amano Hiroshi

    PHYSICAL REVIEW APPLIED   14 巻 ( 2 ) 頁： 024018   2020年8月

  190. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

    Kimura T., Ohnishi K., Amano Y., Fujimoto N., Araidai M., Nitta S., Honda Y., Amano H., Kangawa Y., Shiraishi K.

    Japanese Journal of Applied Physics   59 巻 ( 8 ) 頁： 088001   2020年8月

  191. Growth of high-quality GaN by halogen-free vapor phase epitaxy

    Kimura T., Kataoka K., Uedono A., Amano H., Nakamura D.

    Applied Physics Express   13 巻 ( 8 ) 頁： 085509   2020年8月

  192. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

    Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 8 )   2020年8月

  193. Growth of high-quality GaN by halogen-free vapor phase epitaxy

    Kimura Taishi, Kataoka Keita, Uedono Akira, Amano Hiroshi, Nakamura Daisuke

    APPLIED PHYSICS EXPRESS   13 巻 ( 8 )   2020年8月

  194. Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

    Dinh, DV; Hu, N; Honda, Y; Amano, H; Pristovsek, M

    JOURNAL OF MATERIALS CHEMISTRY C   8 巻 ( 25 ) 頁： 8668 - 8675   2020年7月

  195. Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p-n diodes Open Access

    T. Nakano, Y. Harashima, K. Chokawa, K. Shiraishi, A. Oshiyama, Y. Kangawa, S. Usami, N. Mayama, K. Toda, A. Tanaka, Y. Honda, H. Amano

    Applied Physics Letters   117 巻 ( 1 ) 頁： 012105   2020年7月

  196. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

    Sandupatla A., Arulkumaran S., Ng G.I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    Applied Physics Express   13 巻 ( 7 ) 頁： 074001   2020年7月

  197. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   13 巻 ( 7 )   2020年7月

  198. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

    Kushimoto, M; Sakai, T; Ueoka, Y; Tomai, S; Katsumata, S; Deki, M; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   217 巻 ( 14 ) 頁： 1900955   2020年7月

  199. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Open Access

    Liu Q., Fujimoto N., Shen J., Nitta S., Tanaka A., Honda Y., Sitar Z., Boćkowski M., Kumagai Y., Amano H.

    Journal of Crystal Growth   539 巻   頁： 125643   2020年6月

  200. Halide vapor phase epitaxy of p-Type Mg-doped GaN utilizing MgO Open Access

    Ohnishi K., Amano Y., Fujimoto N., Nitta S., Honda Y., Amano H.

    Applied Physics Express   13 巻 ( 6 ) 頁： 016007   2020年6月

  201. Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO Open Access

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   13 巻 ( 6 )   2020年6月

  202. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Open Access

    Liu, Q; Fujimoto, N; Shen, J; Nitta, S; Tanaka, A; Honda, Y; Sitar, Z; Bockowski, M; Kumagai, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   539 巻   2020年6月

  203. Oxygen Incorporation Kinetics in Vicinal <i>m</i>(10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy

    Yosho, D; Shintaku, F; Inatomi, Y; Kangawa, Y; Iwata, JI; Oshiyama, A; Shiraishi, K; Tanaka, A; Amano, H

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   14 巻 ( 6 ) 頁： 2000142   2020年6月

  204. Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors. Open Access

      11 巻 ( 5 ) 頁： 519   2020年5月

  205. Improving the Leakage Characteristics and Efficiency of GaN-based Micro-Light-Emitting Diode with Optimized Passivation

    Lee, H; Lee, JH; Park, JS; Seong, TY; Amano, H

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 5 ) 頁： 055001   2020年5月

  206. Impact of high-Temperature implantation of Mg ions into GaN Open Access

    Takahashi M., Tanaka A., Ando Y., Watanabe H., Deki M., Kushimoto M., Nitta S., Honda Y., Shima K., Kojima K., Chichibu S.F., Amano H.

    Japanese Journal of Applied Physics   59 巻 ( 5 ) 頁： 056502   2020年5月

  207. Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE Open Access

    Shintaku F., Yosho D., Kangawa Y., Iwata J.I., Oshiyama A., Shiraishi K., Tanaka A., Amano H.

    Applied Physics Express   13 巻 ( 5 ) 頁： 055507   2020年5月

  208. Impact of high-temperature implantation of Mg ions into GaN Open Access

    Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 5 )   2020年5月

  209. Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE Open Access

    Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   13 巻 ( 5 )   2020年5月

  210. Improved Leakage and Output Characteristics of Pixelated LED Array for Headlight application

    Lee Sang-Youl, Kang Kiman, Lee Eunduk, Jo Yoomin, Kim Doyub, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 4 ) 頁： 045011   2020年4月

  211. Experimental observation of high intrinsic thermal conductivity of AlN Open Access

    Cheng Zhe, Koh Yee Rui, Mamun Abdullah, Shi Jingjing, Bai Tingyu, Huynh Kenny, Yates Luke, Liu Zeyu, Li Ruiyang, Lee Eungkyu, Liao Michael E., Wang Yekan, Yu Hsuan Ming, Kushimoto Maki, Luo Tengfei, Goorsky Mark S., Hopkins Patrick E., Amano Hiroshi, Khan Asif, Graham Samuel

    PHYSICAL REVIEW MATERIALS   4 巻 ( 4 ) 頁： 044602   2020年4月

  212. Tungsten carbide layers deposited on graphite substrates <i>via</i> a wet powder process as anti-parasitic-reaction coatings for reactor components in GaN growth

    Nakamura, D; Kimura, T; Itoh, K; Fujimoto, N; Nitta, S; Amano, H

    CRYSTENGCOMM   22 巻 ( 15 ) 頁： 2632 - 2641   2020年4月

  213. Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

    Lee, SY; Moon, JH; Moon, YT; Kim, CS; Park, S; Oh, JT; Jeong, HH; Seong, TY; Amano, H

    IEEE PHOTONICS TECHNOLOGY LETTERS   32 巻 ( 7 ) 頁： 438 - 441   2020年4月

  214. Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers

    Hainey, M; Robin, Y; Avit, G; Amano, H; Usami, N

    JOURNAL OF CRYSTAL GROWTH   535 巻   頁： 125522   2020年4月

  215. Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

    Tanaka, A; Inotsume, S; Harada, S; Hanada, K; Honda, Y; Ujihara, T; Amano, H

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   257 巻 ( 4 ) 頁： 1900553   2020年4月

  216. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR Open Access

    Sakai, T; Kushimoto, M; Zhang, ZY; Sugiyama, N; Schowalter, LJ; Honda, Y; Sasaoka, C; Amano, H

    APPLIED PHYSICS LETTERS   116 巻 ( 12 ) 頁： 122101   2020年3月

  217. Effects of Ultraviolet Wavelength and Ambient Temperature on Reliability of Silicones in InAlGaN-Based Light-Emitting-Diode Package

    Kim Ho-Young, Lee Jong-Woo, Jun Duk-Jin, Song Sung-Joo, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 3 ) 頁： 035005   2020年3月

  218. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms. Open Access

    Yamamoto K, Nakano K, Tanaka A, Honda Y, Ando Y, Ogura M, Matsumoto M, Anada S, Ishikawa Y, Amano H, Hirayama T

    Microscopy (Oxford, England)   69 巻 ( 1 ) 頁： 1-10   2020年3月

  219. Using SiO2-Based Distributed Bragg Reflector to Improve the Performance of AlGaInP-Based Red Micro-Light Emitting Diode

    Lee Sang-Youl, Moon Ji Hyung, Moon Yong-Tae, Choi Byoungjun, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 3 ) 頁： 036002   2020年2月

  220. Using SiO<inf>2</inf>-based distributed Bragg reflector to improve the performance of AlGaInP-based red micro-light emitting diode

    Lee S.Y., Moon J.H., Moon Y.T., Choi B., Oh J.T., Jeong H.H., Seong T.Y., Amano H.

    ECS Journal of Solid State Science and Technology   9 巻 ( 3 )   2020年2月

  221. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode

    Sato, D; Honda, A; Koizumi, A; Nishitani, T; Honda, Y; Amano, H

    MICROELECTRONIC ENGINEERING   223 巻   頁： 111229   2020年2月

  222. Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode Open Access

    Lee Da-Hoon, Kang Daesung, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   53 巻 ( 4 ) 頁： 045106   2020年1月

  223. Oblique-Angle Deposited SiO2/Al Omnidirectional Reflector for Enhancing the Performance of AlGaN-Based Ultraviolet Light-Emitting Diod

    Jeongwon Lee, Tae-Yeon Seong, Hiroshi Amano

    ECS Journal of Solid State Science and Technology   9 巻 ( 2 )   2020年1月

  224. Oblique-Angle Deposited SiO2/Al Omnidirectional Reflector for Enhancing the Performance of AlGaN-Based Ultraviolet Light-Emitting Diode

    Jeongwon Lee, Tae-Yeon Seong, Hiroshi Amano

    ECS Journal of Solid State Science and Technology   9 巻 ( 2 ) 頁： 026005   2020年1月

  225. Heavy Mg Doping to Form Reliable Rh Reflective Ohmic Contact for 278 nm Deep Ultraviolet AlGaN-Based Light-Emitting Diodes

    Lee Sang-Youl, Han Dae-Seob, Lee Yong-Gyeong, Choi Kwang-Ki, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 6 ) 頁： 065016   2020年1月

  226. Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

    Abhinay, S; Arulkumaran, S; Ng, GI; Ranjan, K; Deki, M; Nitta, S; Honda, Y; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 1 ) 頁： 010906   2020年1月

  227. Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum Open Access

    Daiki Sato, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   38 巻 ( 1 ) 頁： 012603   2020年1月

  228. Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

    Yang, X; Nitta, S; Pristovsek, M; Liu, YH; Liao, YQ; Kushimoto, M; Honda, Y; Amano, H

    2D MATERIALS   7 巻 ( 1 ) 頁： 015004   2020年1月

  229. Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

    Zheng Ye, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

    Japanese Journal of Applied Physics   59 巻 ( 2 ) 頁： 025511   2020年

  230. Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN Open Access

    Duc V Dinh, Nan Hu, Yoshio Honda, Hiroshi Amano, Markus Pristovsek

    Semiconductor Science and Technology   35 巻 ( 3 ) 頁： 035004   2020年

  231. Preface - JSS Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki

    Ren F., Mishra K.C., Amano H., Collins J., Han J., Im W.B., Kneissl M., Seong T.Y., Setlur A., Suski T., Zych E.

    ECS Journal of Solid State Science and Technology   9 巻 ( 1 ) 頁： 010001   2020年

  232. Damage-Free Plasma Etching to Enhance Performance of AlGaInP-Based Micro-Light Emitting Diode

    Lee, SY; Lee, ED; Moon, JH; Choi, B; Oh, JT; Jeong, HH; Seong, TY; Amano, H

    IEEE PHOTONICS TECHNOLOGY LETTERS   32 巻 ( 17 ) 頁： 1041 - 1044   2020年

  233. マクロステップを持つ<i>c</i>面AlN/サファイアテンプレート上に成長させたAlGaN量子井戸の物性評価

    小島 一信, 長澤 陽祐, 平野 光, 一本松 正道, 杉江 隆一, 本田 善央, 天野 浩, 赤﨑 勇, 秩父 重英

    日本結晶成長学会誌   47 巻 ( 3 ) 頁： n/a   2020年

  234. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    GALLIUM NITRIDE MATERIALS AND DEVICES XV   11280 巻   頁： 1128015   2020年

  235. Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy α-particle detection

    Sandupatia, A; Arulkurnaran, S; Ranjan, K; Ng, GI; Murumu, PP; Kennedy, J; Deki, M; Nitta, S; Honda, Y; Amano, H

    2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020)     2020年

  236. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

    Liao, YQ; Chen, T; Wang, J; Ando, Y; Yang, X; Watanabe, H; Hirotani, J; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)   2020-September 巻   頁： 349 - 352   2020年

  237. GaN基板向けレーザスライシング技術の開発 Open Access

    河口 大祐, 田中 敦之, 油井 俊樹, 伊ヶ崎 泰則, 和仁 陽太郎, 天野 浩

    年次大会   2020 巻 ( 0 ) 頁： S16306   2020年

  238. 高品質AlN 基板上UV-C レーザーダイオード Open Access

    笹岡 千秋, 天野 浩

    レーザー研究   48 巻 ( 8 ) 頁： 427   2020年

  239. Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe -Type <i>n</i>-Contact and Reflective Bonding Pad Open Access

    Kim, JH; Lee, YW; Im, HS; Oh, CH; Shim, JI; Kang, D; Seong, TY; Amano, H

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 1 ) 頁： 015021   2019年12月

  240. Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

    Nagasawa Y., Sugie R., Kojima K., Hirano A., Ippommatsu M., Honda Y., Amano H., Akasaki I., Chichibu S.F.

    Journal of Applied Physics   126 巻 ( 21 ) 頁： 215703   2019年12月

  241. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   257 巻   頁： 1900554   2019年12月

  242. A 271.8 nm deep-ultraviolet laser diode for room temperature operation Open Access

    Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   12 巻 ( 12 ) 頁： 124003   2019年12月

  243. Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

    Dinh Duc V., Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   34 巻 ( 12 ) 頁： 125012   2019年12月

  244. Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency Open Access

    Sandupatla, A; Arulkumaran, S; Ranjan, K; Ng, GI; Murmu, PP; Kennedy, J; Nitta, S; Honda, Y; Deki, M; Amano, H

    SENSORS   19 巻 ( 23 ) 頁： 5107   2019年12月

  245. Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure Open Access

    Kim Ho-Young, Lee Jong Woo, Moon Young Min, Oh Jeong Tak, Jeong Hwan-Hee, Song June-O, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 1 ) 頁： 015014   2019年11月

  246. Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties Open Access

    Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SCIENTIFIC REPORTS   9 巻   頁： 15802   2019年11月

  247. Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application

    Kang, D; Oh, JT; Song, JO; Seong, TY; Kneissl, M; Amano, H

    APPLIED PHYSICS EXPRESS   12 巻 ( 10 ) 頁： 102016   2019年10月

  248. V-shaped dislocations in a GaN epitaxial layer on GaN substrate Open Access

    Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

    AIP ADVANCES   9 巻 ( 9 ) 頁： 095002   2019年9月

  249. Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

    Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M

    MICROELECTRONICS RELIABILITY   100 巻   頁： 113418   2019年9月

  250. Via-Hole-Type Flip-Chip Packaging to Improve the Thermal Characteristics and Reliability of Blue Light Emitting Diodes

    Kim, HY; Lim, CM; Kim, KS; Oh, JT; Jeong, HH; Song, JO; Seong, TY; Amano, H

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   8 巻 ( 9 ) 頁： Q165 - Q170   2019年8月

  251. Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes

    Kim Dae-Hyun, Park Young Soo, Kang Daesung, Kim Kyoung-Kook, Seong Tae-Yeon, Amano Hiroshi

    JOURNAL OF ALLOYS AND COMPOUNDS   796 巻   頁： 146-152   2019年8月

  252. Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes Open Access

    Sarzynski Marcin, Grzanka Ewa, Grzanka Szymon, Targowski Grzegorz, Czernecki Robert, Reszka Anna, Holy Vaclav, Nitta Shugo, Liu Zhibin, Amano Hiroshi, Leszczynski Mike

    MATERIALS   12 巻 ( 16 ) 頁： 2583   2019年8月

  253. Influence of Temperature-Dependent Substrate Decomposition on Graphene for Separable GaN Growth

    Park Jeong-Hwan, Lee Jun-Yeob, Park Mun-Do, Min Jung-Hong, Lee Je-Sung, Yang Xu, Kang Seokjin, Kim Sang-Jo, Jeong Woo-Lim, Amano Hiroshi, Lee Dong-Seon

    ADVANCED MATERIALS INTERFACES   6 巻   頁： 1900821   2019年7月

  254. Fabrication of a GaInN/GaInP/GaInAs/Ge four-junction solar cell using the wafer bonding technology

    Takahashi, K; Shinoda, R; Mitsufuji, S; Iwaya, M; Kamiyama, S; Takeuchi, T; Hattori, T; Akasaki, I; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( 7 ) 頁： 072003   2019年7月

  255. Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition Open Access

    Matsumoto, K; Ono, T; Honda, Y; Torigoe, K; Kushimoto, M; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( 7 ) 頁： 075502   2019年7月

  256. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth Open Access

    Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   516 巻   頁： 63-66   2019年6月

  257. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current

    Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   114 巻 ( 23 ) 頁： 232105   2019年6月

  258. Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

    Liu, Q; Fujimoto, N; Nitta, S; Honda, Y; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC ) 頁： SC1055   2019年6月

  259. Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming Open Access

    Robin, Y; Hemeret, F; D'Inca, G; Pristovsek, M; Trassoudaine, A; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC ) 頁： SCCC06   2019年6月

  260. Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors Open Access

    Uemura, K; Deki, M; Honda, Y; Amano, H; Sato, T

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC ) 頁： SCCD20   2019年6月

  261. Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

    Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC ) 頁： SCCD25   2019年6月

  262. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates Open Access

    Usami, S; Tanaka, A; Fukushima, H; Ando, Y; Deki, M; Nitta, S; Honda, Y; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC ) 頁： SCCB24   2019年6月

  263. Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

    Nan, H; Dinh, DV; Pristovsek, M; Honda, Y; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC ) 頁： SC1044   2019年6月

  264. Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps

    Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ipponmatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    APPLIED PHYSICS EXPRESS   12 巻 ( 6 ) 頁： 064009   2019年6月

  265. Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

    Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   256 巻 ( 6 ) 頁： 1800648   2019年6月

  266. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

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    JOURNAL OF CRYSTAL GROWTH   514 巻   頁： 13-13   2019年5月

  267. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE Open Access

    Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   512 巻   頁： 78-83   2019年4月

  268. Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE Open Access

    Duc V Dinh, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   512 巻   頁： 100-104   2019年4月

  269. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

    Kneissl Michael, Seong Tae-Yeon, Han Jung, Amano Hiroshi

    NATURE PHOTONICS   13 巻 ( 4 ) 頁： 233-244   2019年4月

  270. GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates Open Access

    Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    AIP ADVANCES   9 巻 ( 4 ) 頁： 045007   2019年4月

  271. Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method

    Yamada, J; Usami, S; Ueda, Y; Honda, Y; Amano, H; Maruyama, T; Naritsuka, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( 4 ) 頁： 040904   2019年4月

  272. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy Open Access

    Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   509 巻   頁： 50-53   2019年3月

  273. GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors Open Access

    Cai Wei, Yuan Jialei, Ni Shuyu, Shi Zheng, Zhou Weidong, Liu Yuhuai, Wang Yongjin, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   12 巻 ( 3 ) 頁： 032004   2019年3月

  274. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics Open Access

    Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

    MATERIALS   12 巻 ( 5 ) 頁： 689   2019年3月

  275. Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD

    Abhinay S., Arulkumaran S., Ng G.I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019     頁： 106 - 108   2019年3月

  276. GaN薄膜における貫通転位およびナノパイプm壁面の第一原理計算に基づく電子状態解析

    中野 崇志, 長川 健太, 洗平 昌晃, 白石 賢二, 押山 淳, 宇佐美 茂佳, 草場 彰, 寒川 義裕, 田中 敦之, 本田 善央, 天野 浩

    応用物理学会学術講演会講演予稿集   2019.1 巻 ( 0 ) 頁： 3122 - 3122   2019年2月

  277. Morphological study of InGaN on GaN substrate by supersaturation Open Access

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   508 巻   頁： 58-65   2019年2月

  278. How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire Open Access

    Hu, N; Dinh, DV; Pristovsek, M; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   507 巻   頁： 205 - 208   2019年2月

  279. 高感度電子線ホログラフィーによるGaN系半導体のドーパント濃度分布の観察

    仲野 靖孝, 松本 実子, 穴田 智史, 山本 和生, 石川 由加里, 平山 司, 安藤 悠人, 小倉 昌也, 田中 敦之, 本田 善央, 天野 浩

    まてりあ   58 巻 ( 2 ) 頁： 103 - 103   2019年2月

  280. Pole figure analysis from electron backscatter diffraction-an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy

    Hainey, M; Robin, Y; Amano, H; Usami, N

    APPLIED PHYSICS EXPRESS   12 巻 ( 2 )   2019年2月

  281. Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown Open Access

    Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   12 巻 ( 2 ) 頁： 026502   2019年2月

  282. Compositional control of homogeneous InGaN nanowires with the In content up to 90.

    Zeghouane M, Avit G, André Y, Bougerol C, Robin Y, Ferret P, Castelluci D, Gil E, Dubrovskii VG, Amano H, Trassoudaine A

    Nanotechnology   30 巻 ( 4 ) 頁： 044001   2019年1月

  283. Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core- shell nanorods

    Robin, Y; Evropeitsev, EA; Shubina, TV; Kirilenko, DA; Davydov, VY; Smirnov, AN; Toropov, AA; Eliseyev, IA; Bae, SY; Kushimoto, M; Nitta, S; Ivanov, SV; Amano, H

    NANOSCALE   11 巻 ( 1 ) 頁： 193 - 199   2019年1月

  284. Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps

    Kojima K., Nagasawa Y., Hirano A., Ippommatsu M., Honda Y., Amano H., Akasaki I., Chichibu S.F.

    Applied Physics Letters   114 巻 ( 1 ) 頁： 011102   2019年1月

  285. 286 nm monolithic multicomponent system

    Yuan, JL; Jiang, Y; Shi, Z; Gao, XM; Wang, YJ; Sun, XJ; Li, DB; Liu, YH; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( 1 ) 頁： 010909   2019年1月

  286. Electronic structure analysis of core structures of threading dislocations in GaN

    Nakano, T; Chokawa, K; Araidai, M; Shiraishi, K; Oshiyama, A; Kusaba, A; Kangawa, Y; Tanaka, A; Honda, Y; Amano, H

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)     頁： .   2019年

  287. Light-Emitting Diodes Materials, Processes, Devices and Applications Foreword

    Amano, H

    LIGHT-EMITTING DIODES: MATERIALS, PROCESSES, DEVICES AND APPLICATIONS   4 巻   頁： V - V   2019年

  288. MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire Open Access

    Dinh Duc V., Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   502 巻   頁： 14-18   2018年11月

  289. What is red? On the chromaticity of orange-red InGaN/GaN based LEDs Open Access

    Robin, Y; Pristovsek, M; Amano, H; Oehler, F; Oliver, RA; Humphreys, CJ

    JOURNAL OF APPLIED PHYSICS   124 巻 ( 18 ) 頁： 183102   2018年11月

  290. Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applications

    Robin, Y; Liao, YQ; Pristovsek, M; Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   215 巻 ( 21 ) 頁： 1800361   2018年11月

  291. Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method

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    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   36 巻 ( 6 ) 頁： 06JK02   2018年11月

  292. Full-duplex light communication with a monolithic multicomponent system Open Access

    Wang Yongjin, Wang Xin, Zhu Bingcheng, Shi Zheng, Yuan Jialei, Gao Xumin, Liu Yuhuai, Sun Xiaojuan, Li Dabing, Amano Hiroshi

    LIGHT-SCIENCE & APPLICATIONS   7 巻   頁： 83   2018年10月

  293. Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

    Avit Geoffrey, Zeghouane Mohammed, Andre Yamina, Castelluci Dominique, Gil Evelyne, Bae Si-Young, Amano Hiroshi, Trassoudaine Agnes

    CRYSTENGCOMM   20 巻 ( 40 ) 頁： 6207 - 6213   2018年10月

  294. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

    Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   57 巻 ( 10 ) 頁： 105501   2018年10月

  295. High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire Open Access

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   498 巻   頁： 377-380   2018年9月

  296. 「材料研究の楽しさ」

    天野 浩

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  297. Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Murakami Satoshi, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   57 巻 ( 9 ) 頁： 091001   2018年9月

  298. Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

    Barry Ousmane I., Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   12 巻 ( 8 ) 頁： 1800124   2018年8月

  299. Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga<sub>2</sub>O<sub>3</sub> passivated by sputtering

    Ueoka, Y; Deki, M; Honda, Y; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   57 巻 ( 7 ) 頁： 070302   2018年7月

  300. Study on the Main-Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN-Based DUV-LEDs

    Yamada, K; Nagasawa, Y; Nagai, S; Hirano, A; Ippommatsu, M; Aosaki, K; Honda, Y; Amano, H; Akasaki, I

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   215 巻 ( 10 ) 頁： 1700525   2018年5月

  301. Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes Open Access

    Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

    SCIENTIFIC REPORTS   8 巻   頁： 7311   2018年5月

  302. <i>m</i>-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle <i>m</i>-Plane GaN Substrates Open Access

    Tanaka, A; Ando, Y; Nagamatsu, K; Deki, M; Cheong, H; Ousmane, B; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   215 巻 ( 9 ) 頁： 1700645   2018年5月

  303. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy Open Access

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   11 巻 ( 5 ) 頁： 051002   2018年5月

  304. Transferrable monolithic multicomponent system for near-ultraviolet optoelectronics Open Access

    Qin Chuan, Gao Xumin, Yuan Jialei, Shi Zheng, Jiang Yuan, Liu Yuhuai, Wang Yongjin, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   11 巻 ( 5 ) 頁： 051201   2018年5月

  305. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, Yao Yong-Zhao, Ishikawa Yukari

    APPLIED PHYSICS LETTERS   112 巻 ( 18 ) 頁： 182106   2018年4月

  306. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures Open Access

    Oh Jeong-Tak, Lee Sang-Youl, Moon Yong-Tae, Moon Ji Hyung, Park Sunwoo, Hong Ki Yong, Song Ki Young, Oh Chan-Hyoung, Shim Jong-In, Jeong Hwan-Hee, Song June-O, Amano Hiroshi, Seong Tae-Yeon

    OPTICS EXPRESS   26 巻 ( 9 ) 頁： 11194-11200   2018年4月

  307. The 2018 GaN power electronics roadmap Open Access

    Amano H., Baines Y., Beam E., Borga Matteo, Bouchet T., Chalker Paul R., Charles M., Chen Kevin J., Chowdhury Nadim, Chu Rongming, De Santi Carlo, De Souza Maria Merlyne, Decoutere Stefaan, Di Cioccio L., Eckardt Bernd, Egawa Takashi, Fay P., Freedsman Joseph J., Guido L., Haeberlen Oliver, Haynes Geoff, Heckel Thomas, Hemakumara Dilini, Houston Peter, Hu Jie, Hua Mengyuan, Huang Qingyun, Huang Alex, Jiang Sheng, Kawai H., Kinzer Dan, Kuball Martin, Kumar Ashwani, Lee Kean Boon, Li Xu, Marcon Denis, Maerz Martin, McCarthy R., Meneghesso Gaudenzio, Meneghini Matteo, Morvan E., Nakajima A., Narayanan E. M. S., Oliver Stephen, Palacios Tomas, Piedra Daniel, Plissonnier M., Reddy R., Sun Min, Thayne Iain, Torres A., Trivellin Nicola, Unni V., Uren Michael J., Van Hove Marleen, Wallis David J., Wang J., Xie J., Yagi S., Yang Shu, Youtsey C., Yu Ruiyang, Zanoni Enrico, Zeltner Stefan, Zhang Yuhao

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   51 巻 ( 16 ) 頁： 163001   2018年4月

  308. 昇温脱離法によるInGaN表面上のCs層の解析

    鹿島 将央, 佐藤 大樹, 小泉 淳, 西谷 智博, 本田 善央, 天野 浩, 飯島 北斗, 目黒 多加志

    応用物理学会学術講演会講演予稿集   2018.1 巻 ( 0 ) 頁： 1670 - 1670   2018年3月

  309. Chronicity of Anterior Cruciate Ligament Deficiency, Part 1: Effects on the Tibiofemoral Relationship Before and Immediately After Anatomic ACL Reconstruction With Autologous Hamstring Grafts Open Access

    Tanaka, Y; Kita, K; Takao, R; Amano, H; Uchida, R; Shiozaki, Y; Yonetani, Y; Kinugasa, K; Mae, T; Horibe, S

    ORTHOPAEDIC JOURNAL OF SPORTS MEDICINE   6 巻 ( 1 )   2018年1月

  310. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy Open Access

    Yang Xu, Nitta Shugo, Nagamatsu Kentaro, Bae Si-Young, Lee Ho-Jun, Liu Yuhuai, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   482 巻 ( 15 ) 頁： 1 - 8   2018年1月

  311. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

    Yates, L; Pavlidis, G; Graham, S; Usami, S; Nagamatsu, K; Honda, Y; Amano, H

    PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018)     頁： 831 - 837   2018年

  312. Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN

    Nakano Takashi, Araidai Masaaki, Shiraishi Kenji, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8   86 巻 ( 12 ) 頁： 41 - 49   2018年

  313. DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy 査読有り

    Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano

    APPLIED PHYSICS LETTERS   111 巻   頁： 141602/1-5   2017年10月

  314. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

    Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano

    APPLIED PHYSICS LETTERS   111 巻   頁： 122102/1-5   2017年9月

  315. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations 査読有り

    Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, and Hiroshi Amano

    Applied Physics Express   10 巻   頁： 082101/1-4   2017年8月

  316. Low cost high voltage GaN polarization superjunction field effect transistors Open Access

    Kawai H., Yagi S., Hirata S., Nakamura F., Saito T., Kamiyama Y., Yamamoto M., Amano H., Unni V., Narayanan E. M. S.

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   214 巻 ( 8 ) 頁： 1600834/1-10   2017年8月

  317. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE 査読有り

    Atsushi Tanaka, Ousmane1 Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Yuto Ando, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi A   214 巻 ( 8 ) 頁： 1600829/1-5   2017年8月

  318. Effect of dislocations on the growth of p-type GaN and on the characteristics of p–n diodes 招待有り 査読有り

      214 巻 ( 8 ) 頁： 1600837/1-5   2017年8月

  319. Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants 査読有り

    Si-Young Bae, Kaddour Lekhal, Ho-Jun Lee, Jung-Wook Min, Dong-Seon Lee, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi B   254 巻 ( 8 ) 頁： 1600722/1-7   2017年8月

  320. Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system 査読有り

    Kentaro Nagamatsu, Shugo Nitta, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi B   254 巻 ( 8 ) 頁： 1600737/1-4   2017年8月

  321. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

    Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   214 巻 ( 8 )   2017年8月

  322. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity 査読有り

    Guangxu Ju, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    Applied Physics Letters   110 巻 ( 26 ) 頁： 262105/1-5   2017年6月

  323. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer 査読有り

    Zheng Sun, Peifeng Song, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   468 巻   頁： 866-869   2017年6月

  324. Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer 査読有り

    S.-Y.Bae, K. Lekhal, H.-J.Lee, T.Mitsunari, J.-W.Min, D.-S.Leed, M.Kushimoto, Y.Honda, H.Amano

    Journal of Crystal Growth   468 巻   頁： 110-113   2017年6月

  325. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer 査読有り

    Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Akira Tamura, Takafumi Suzuki, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

    Journal of Crystal Growth   468 巻   頁： 547-551   2017年6月

  326. Effect of V/III ratio on the surface morphology and electrical properties of m–plane ( 101¯0 ) GaN homoepitaxial layers 査読有り

      468 巻   頁： 552-556   2017年6月

  327. Annealing effect on threading dislocations in a GaN grown on Si substrate 査読有り

      468 巻   頁： 835-838   2017年6月

  328. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer

    Sun Zheng, Song Peifeng, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   468 巻   頁： 866 - 869   2017年6月

  329. Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output 査読有り

    Michiko Kaneda, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   56 巻   頁： 061002   2017年5月

  330. III-nitride core-shell nanorod array on quartz substrates Open Access

    Bae Si-Young, Min Jung-Wook, Hwang Hyeong-Yong, Lekhal Kaddour, Lee Ho-Jun, Jho Young-Dahl, Lee Dong-Seon, Lee Yong-Tak, Ikarashi Nobuyuki, Honda Yoshio, Amano Hiroshi

    SCIENTIFIC REPORTS   7 巻   頁： 45345   2017年3月

  331. 紫外発光素子に向けたp層側光吸収低減の検討

    安田 俊輝, 桑原 奈津子, 竹内 哲也, 岩谷 素顕, 上山 智, 赤﨑 勇, 天野 浩

    応用物理学会学術講演会講演予稿集   2017.1 巻 ( 0 ) 頁： 3400 - 3400   2017年3月

  332. フッ素系樹脂の深紫外発光ダイオード用封止樹脂としての耐久性とその劣化機構

    長澤 陽祐, 山田 貴穂, 永井 祥子, 平野 光, 一本松 正道, 青崎 耕, 本田 善央, 天野 浩, 赤﨑 勇

    応用物理学会学術講演会講演予稿集   2017.1 巻 ( 0 ) 頁： 1136 - 1136   2017年3月

  333. NEA-InGaNフォトカソードの量子効率に対する熱処理の効果

    鹿島 将央, 飯島 北斗, 西谷 智博, 佐藤 大樹, 本田 善央, 天野 浩, 目黒 多加志

    応用物理学会学術講演会講演予稿集   2017.1 巻 ( 0 ) 頁： 1554 - 1554   2017年3月

  334. Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template

    Yasuda Toshiki, Takeuchi Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   10 巻 ( 2 )   2017年2月

  335. Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template 査読有り

    Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Applied Physics Express   10 巻   頁： 025502   2017年1月

  336. From the dawn of gan-based light-emitting devices to the present day

    Amano H.

    Handbook of Solid-State Lighting and LEDs     頁： 3-12   2017年1月

  337. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 degrees C by metalorganic vapor phase epitaxy

    Katsuno Shota, Yasuda Toshiki, Hagiwara Koudai, Koide Norikatsu, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 巻 ( 1 )   2017年1月

  338. Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching 査読有り Open Access

    Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, and Hiroshi Amano

    Physica Status Solidi b   253 巻   頁： 1700387(1-7)   2017年

  339. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura, M; Ando, Y; Usami, S; Nagamatsu, K; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Pristovsek, M; Kawai, H; Yagi, S; Amano, H

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     頁： .   2017年

  340. Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides

    Amano Hiroshi

    III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION   133 巻   頁： 1 - 9   2017年

  341. From the Dawn of GaN-Based Light-Emitting Devices to the Present Day

    Amano, H

    HANDBOOK OF SOLID-STATE LIGHTING AND LEDS     頁： 3 - 11   2017年

  342. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy 査読有り

    Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Japanese Journal of Applied Physics   56 巻   頁： 015504   2016年12月

  343. Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer 査読有り

    Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Tadashi Mitsunaria, Akira Tamura, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   454 巻   頁： 114-120   2016年11月

  344. Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE 査読有り

    Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   447 巻   頁： 55-61   2016年8月

  345. Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study 査読有り

    Shoko Nagai, Kiho Yamada, Akira Hirano, Masamichi Ippommatsu, Masahiro Ito, Naoki Morishima, Ko Aosaki, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   55 巻   頁： 082101/1-7   2016年8月

  346. Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy 査読有り

    Tran Thien Duc, Galia Pozina, Hiroshi Amano, Bo Monemar, Erik Janz´en, and Carl Hemmingsson

    PHYSICAL REVIEW   B94 巻   頁： 045206/1-8   2016年7月

  347. Study of radiation detection properties of GaN pn diode 査読有り

    Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

    Japanese Journal of Applied Physics   55 巻   頁： 05FJ02/1-3   2016年5月

  348. Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction 査読有り

    Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction   55 巻 ( 5S ) 頁： 05FL03/1-5   2016年5月

  349. Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity 査読有り

    Daiki Sato, Tomohiro Nishitani, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   55 巻 ( 5S ) 頁： 05FH05/1-4   2016年5月

  350. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode 査読有り Open Access

    Byung Oh Jung, Si-Young Bae, Seunga Lee, Sang Yun Kim, Jeong Yong Lee, Yoshio Honda and Hiroshi Amano

    Nanoscale Research Letters   11 巻   2016年4月

  351. Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer 査読有り

    Zheng Sun, Kentaro Nagamatsu, Marc Olsson, Peifeng Song, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics,   55 巻 ( 5S ) 頁： 05FB06/1-5   2016年4月

  352. Growth of semipolar (1-101) high-indium-content InGaN quantum well using InGaN tilting layer on Si(001) 査読有り

    Maki Kushimoto, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   55 巻 ( 5S ) 頁： 05FA10/1-4   2016年4月

  353. Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering 査読有り

    Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Tadashi Mitsunari, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   55 巻 ( 5S ) 頁： 05FD03/1-4   2016年4月

  354. Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials 招待有り

    Hiroshi Amano

    Progress in Crystal Growth and Characterization of Materials   62 巻   頁： 126–135   2016年4月

  355. Structural and optical study of core–shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum 査読有り

      55 巻 ( 5S ) 頁： 05FG03/1-8   2016年4月

  356. Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy 査読有り

    Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   55 巻   頁： 05FF03/1-5   2016年3月

  357. Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy 査読有り

    Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano and Koichi Kakimoto

    Japanese Journal of Applied Physics   55 巻 ( 5S ) 頁： 05FM01/1-4   2016年2月

  358. Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations 査読有り

    Seunga Lee, Yoshio Honda, Hiroshi Amano, Jongjin Jang and Okhyun Nam

    Japanese Journal of Applied Physics Rapid Communications   55 巻 ( 3 ) 頁： 030306/1-4   2016年2月

  359. Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells 査読有り

    Lee, Seunga; Honda, Yoshio; Amano, Hiroshi

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   49 巻 ( 2 ) 頁： 025103   2016年1月

  360. Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition 査読有り

    Si-Young Bae, Byung Oh Jung, Kaddour Lekhal, Sang Yun Kim, Jeong Yong Lee, Dong-Seon Lee, Manato Deki, Yoshio Honda and Hiroshi Amano

    CrystEngComm   18 巻   頁： 1505-1514   2016年1月

  361. The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer 査読有り

    Zheng Sun, Akio Ohta, Seiichi Miyazaki, Kentaro Nagamatsu, Hojun Lee, Marc Olsson, Zheng Ye, Manato Deki, Yoshio Honda, and Hiroshi Amano

    Japanese Journal of Applied Physics   55 巻   頁： 010303/1-3   2016年1月

  362. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation 招待有り 査読有り

    Hiroshi Amano

    Rev. Mod. Phys.   87 巻 ( 4 ) 頁： 1133-1138   2015年12月

  363. Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer 査読有り

    Tadashi Mitsunari, Ho Jun Lee, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   431 巻   頁： 60-63   2015年12月

  364. Time-resolved photoluminescence properties of hybrids based on inorganic AlGaN/GaN quantum wells and colloidal ZnO nanocrystals 査読有り Open Access

    M. Forsberg, C. Hemmingsson, H. Amano, G. Pozina

    Superlattices and Microstructures   87 巻   頁： 38-41   2015年11月

  365. Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges 査読有り

    Toshikiu Yasuda, Kento Hayashi, Syouta Katsuno, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, and Hiroshi Amano

    Physica Status Solidi a   212 巻 ( 5 ) 頁： 920-924   2015年5月

  366. Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells 査読有り Open Access

    Hideaki Murotani, Yoichi Yamada, Yoshio Honda, and Hiroshi Amano

    Physica Status Solidi b   252 巻 ( 5 ) 頁： 940-945   2015年5月

  367. Resonant Raman and FTIR spectra of carbon doped GaN 査読有り

    S. Ito, H. Kobayashi, K. Arak,i, K. Suzuki, N. Sawaki, K. Yamashita, Y. HOnda, H. Amano

    Journal of Crystal Grwoth   414 巻 ( 15 ) 頁： 56-60   2015年3月

  368. Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts 査読有り

    Moe Naganawa, Toshichika Aoki, Ji-Su Son, Hiroshi Amano, Kenji Shiojima

    physica status solidi (b)   252 巻 ( 5 ) 頁： 1024–1030   2015年3月

  369. Optically pumped lasing properties of (1-101) InGaN/GaN stripe multi quantum wells with ridge cavity structure on patterned (001) Si substrates 査読有り

    Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda and Hiroshi Amano

    Applied Physics Express   8 巻 ( 2 ) 頁： 022702   2015年2月

  370. Dynamic properties of excitons in ZnO/AlGaN/GaN hybrid nanostructures 査読有り

    Mathias Forsberg, Carl Hemmingsson, Hiroshi Amano , Galia Pozina

    Scientific Reports   5 巻   頁： 7889   2015年1月

  371. Development of underfilling and encapsulation for deep-ultraviolet LEDs 査読有り

    Kiho Yamada, Yuuta Furusawa, Shoko Nagai, Akira Hirano, Masamichi Ippommatsu, Ko Aosaki, Naoki Morishima, Hiroshi Amano and Isamu Akasaki

    Applied Physics Express   8 巻 ( 1 ) 頁： 012101   2015年1月

  372. Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region 査読有り

    Jung, Byung Oh; Bae Si-Young; Kim, Sang Yun; Lee, Seunga; Lee, Jeong Yong; Lee, Dong-Seon; Kato, Yoshihiro; Honda, Yoshio ;Amano, Hiroshi

    Nano Energy   11 巻   頁： 294-303   2015年1月

  373. Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy 査読有り

    Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Hiroshi Amano, Isamu Akasaki

    Journal of Crystal Growth   407 巻   頁： 68-73   2014年12月

  374. Photoemission lifetime of a negative electron affinity gallium nitride photocathode 査読有り

    Tomohiro Nishitani, Masao Tabuchi, Hiroshi Amano, Takuya Maekawa, Makoto Kuwahara and Takashi Meguro

    Journal of Vacuum Science and Technology   B32 巻 ( 6 ) 頁： 06F901   2014年11月

  375. Nature of yellow luminescence band in GaN grown on Si substrate 査読有り

    Shogo Ito, Taihei Nakagita, Nobuhiko Sawaki, Hyung Soo Ahn, Masashi Irie, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Japanese Journal of Applied Physics   53 巻   頁： 11RC02/1-5   2014年9月

  376. Atom probe tomography study of Mg-doped GaN layers 査読有り

    S Khromov, D Gregorius, R Schiller, J Lösch, M Wahl, M Kopnarski, H Amano, B Monemar, L Hultman and G Pozina

    Nanotechnology   25 巻 ( 27 )   2014年6月

  377. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well 査読有り

    Ji-Su Son, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Japanese Journal of Applied Physics   53 巻   頁： 05FL01   2014年5月

  378. Epitaxial growth of GaN by REMOCVD in the downflow of a very high frequency(VHF) N2/H2 excited plasma 査読有り

    Yi Lu, Hiroki Kondo,Kenji Ishikawa,Osamu Oda,KeigoTakeda,Makoto Sekine, Hiroshi Amano,Masaru Hori

    Journal of Crystal Growth   391 巻   頁： 97-103   2014年4月

  379. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy 査読有り

    Guangxu Ju, Yoshihiro Kato, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    physica status solidi (c)   11 巻 ( 3-4 ) 頁： 393-396   2014年4月

  380. Enhancement of light output power on GaN based light emitting diodes using two direction stripe patterned sapphire substrate 査読有り

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi C   11 巻   頁： 722-725   2014年4月

  381. Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays 査読有り

    Cao Miao, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Japanese Journal of Applied Physics   53 巻   頁： 0303060   2014年3月

  382. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy 査読有り

    Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    Journal of Applied Physics   115 巻   頁： 094906   2014年3月

  383. Multijunction GaInN-based solar cells using a tunnel junction 査読有り

    Hironori Kurokawa, Mitsuru Kaga, Tomomi Goda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Applied Physics Express   7 巻 ( 3 ) 頁： 034104   2014年3月

  384. Novel activation process for Mg-implanted GaN 査読有り

    Shin Hashimoto, Takao Nakamura, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   388 巻   頁： 112-115   2014年2月

  385. Properties of the main Mg-related acceptors in GaN from optical and structural studies 査読有り Open Access

    B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, S. Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoç, H. Amano, M. Iwaya, and I. Akasaki

    Journal of Applied Physics   115 巻   頁： 053507   2014年2月

  386. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching 査読有り Open Access

    Ji-Su Son, Yoshio Honda, and Hiroshi Amano

    Optics Express   22 巻 ( 3 ) 頁： 3585-3592   2014年2月

  387. Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique 査読有り

    Byung Oh Jung, Si-Young Bae, Yoshihiro Kato, Masataka Imura, Dong-Seon Lee, Yoshio Honda and Hiroshi Amano

    CrystEngComm   16 巻   頁： 2273-2282   2014年1月

  388. Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates 査読有り

    Ji-Su Son, Y. Honda, M. Yamaguchi, H. Amano, K. H. Baik, Y. G. Seo and S. M. Hwang

    Thin Solid Films   546 巻 ( 11 ) 頁： 108-113   2013年11月

  389. Effects of exciton localization on internal quantum efficiency of InGaN nanowires 査読有り

    Hideaki Murotani, Yoichi Yamada, Takuya Tabata, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Journal of Applied Physics   114 巻   頁： 153506   2013年10月

  390. Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy 査読有り

    Tomohiro Doi, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JB14   2013年8月

  391. GaN Overgrowth on Thermally Etched Nanoporous GaN Template 査読有り

    Cao Miao, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JB03   2013年8月

  392. Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer 査読有り

    Takaya Yamada, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Japanese Journal of Applied Physics   52 巻   頁： 08JB16   2013年8月

  393. Fabrication of InGaN/GaN Multiple Quantum Wells on (1-101) GaN 査読有り

    Tomoyuki Tanikawa, Tomotaka Sano, Maki Kushimoto, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JC05   2013年8月

  394. Stacking Faults and Luminescence Property of InGaN Nanowires 査読有り

    Takuya Tabata, Jihyun Paek, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JE06   2013年8月

  395. Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire 査読有り

    Ji-Su Son, Cao Miao, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Yong Gon Seo, Sung-Min Hwang, and Kwang Hyeon Baik

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JC04   2013年8月

  396. High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate 査読有り

    Tomotaka Sano, Tomohiro Doi, Shunko Albano Inada, Tomohiko Sugiyama, Yoshio Honda, Hiroshi Amano, and Takashi Yoshino

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JK09   2013年8月

  397. Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern 査読有り

    Koji Okuno, Takahide Oshio, Naoki Shibata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JB09   2013年8月

  398. Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer 査読有り

    Toshiya Ohata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JB11   2013年8月

  399. Combination of ITO and SiO2/AlN Dielectric Multilayer Reflective Electrodes for UV-Emitting Diodes 査読有り

    Tsubasa Nakashima, Kenichiro Takeda, Hiroshi Shinzato, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JG07   2013年8月

  400. GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy 査読有り

    Shinta Nakagawa, Takuya Tabata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JE07   2013年8月

  401. Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes 査読有り

    Mikiko Mori, Shinichiro Kondo, Shota Yamamoto, Tatsuro Nakao1, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JH02   2013年8月

  402. Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires 査読有り

    Hideaki Murotani, Hiroya Andoh, Takehiko Tsukamoto, Toko Sugiura, Yoichi Yamada, Takuya Tabata, Yoshio Honda, Masatoshi Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JE10   2013年8月

  403. Luminescence of Acceptors in Mg-Doped GaN 査読有り Open Access

    Bo Monemar, Sergey Khromov, Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Hiroshi Amano, Vitaliy Avrutin, Xing Li, and Hadis Morkoç

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JJ03   2013年8月

  404. Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20 > and <1-100 > Zone-Axes of AlN for Polarity Determination 査読有り

    Masataka Imura, Ujjal Gautam, Kiyomi Nakajima, Yasuo Koide, Hiroshi Amano, and Kenji Tsuda

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JE15   2013年8月

  405. Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities 査読有り

    Kimiyasu Ide, Yuko Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁： 08JE22   2013年8月

  406. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN 査読有り

    Hiroshi Amano

    Japanese journal of applied physics   52 巻 ( 5 ) 頁： 050001-1-050001-10   2013年5月

  407. AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN 査読有り

    T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

    Journal of Crystal Growth   370 巻 ( 1 ) 頁： 16-21   2013年5月

  408. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy 査読有り

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Tanaka, Shigeyasu; Amano, Hiroshi

    Physica Status Solidi C   10 巻 ( 3 ) 頁： 369-372   2013年3月

  409. Effects of low energy e-beam irradiation on cathodoluminescence from GaN 査読有り

    Suihkonen, S.; Nykaenen, H.; Tanikawa, T.; Yamaguchi, M.; Honda, Y.; Amano, H.

    Physica Status Solidi A   210 巻 ( 2 ) 頁： 383-385   2013年2月

  410. Surface potential effect on excitons in AlGaN/GaN quantum well structures 査読有り

    Pozina, G.; Hemmingsson, C.; Amano, H.; Monemar, B.

    Applied Physics Letters   102 巻 ( 8 ) 頁： 082110/1-082110/4   2013年2月

  411. Development of High-Density Nitrogen Radical Source for Low Mosaicity and High Rate Growth of InGaN Films in Molecular Beam Epitaxy 査読有り

    Chen, S ; Kawai, Y ; Kondo, H ; Ishikawa, K ; Takeda, K ; Kano, H ; Sekine, M ; Amano, H Hori, M

    Japanese Journal of Applied Physics   52 巻 ( 2 ) 頁： 021001-021006   2013年2月

  412. Individual roles of atoms and ions during hydrogen plasma passivation of surface defects on GaN created by plasma etching 査読有り

    Chen, Shang; Ishikawa, Kenji; Lu, Yi; Kometani, Ryosuke; Kondo, Hiroki; Tokuda, Yutaka; Egawa, Takashi; Amano, Hiiroshi; Sekine, Amano; Hori, Masaru

    Japanese Journal of Applied Physics   51 巻 ( 11 ) 頁： 111002/1-11102/5   2012年11月

  413. Correlation between device performance and defects in GaInN-based solar cells 査読有り

    Mori, Mikiko; Kondo, Shinichiro; Yamamoto, Shota; Nakao, Tatsuro; Fujii, Takahiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   5 巻 ( 8 ) 頁： 082301/1-082301/3   2012年8月

  414. MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate 査読有り

    Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki,Takayuki Sugiyama, Hiroshi Amano, Mamoru Imade, Yusuke Mori

    Journal of Crystal Growth   351 巻 ( 1 ) 頁： 126-130   2012年7月

  415. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates 査読有り

    Mitsunari, Tadashi; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physca Status Solidi c   9 巻 ( 3-4 ) 頁： 480-483   2012年7月

  416. Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate 査読有り

    T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, Y. Mori

    Physica Status Solidi c   9 巻 ( 3-4 ) 頁： 875-878   2012年7月

  417. Laser lift-off of AlN/sapphire for UV light-emitting diodes 査読有り

    Aoshima, Hiroki; Takeda, Kenichiro; Takehara, Kosuke; Ito, Shun; Mori, Mikiko; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Physica Status Solidi C   9 巻 ( 3-4 ) 頁： 753-756   2012年7月

  418. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE 査読有り

    Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi c   9 巻 ( 3-4 ) 頁： 646-649   2012年7月

  419. Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors 査読有り

    Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

    Physica Status Solidi c   9 巻 ( 3-4 ) 頁： 942-944   2012年7月

  420. High carrier concentration in high Al-composition AlGaN-channel HEMTs 査読有り

    Hashimoto, Shin; Akita, Katsushi; Yamamoto, Yoshiyuki; Ueno, Masaki; Nakamura, Takao; Yafune, Norimasa; Sakuno, Keiichi; Tokuda, Hirokuni; Kuzuhara, Masaaki; Takeda, Kenichiro; Iwaya, Motoaki; Amano, Hiroshi

      9 巻 ( 2 ) 頁： 373-376   2012年6月

  421. 窒化物ワイドギャップ半導体の現状と展望　　―バルクGaN単結晶成長技術開発の観点から― 査読有り Open Access

    天野　浩

    応用物理   81 巻 ( 6 ) 頁： 455-463   2012年6月

  422. Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates 査読有り

    Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichirou Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   51 巻   頁： 051001   2012年5月

  423. Growth of GaN and AlGaN on (100) beta-Ga2O3 substrates 査読有り

    Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

      9 巻 ( 3-4 ) 頁： 519-522   2012年5月

  424. Properties of nitride-based photovoltaic cells under concentrated light illumination 査読有り

    Shota Yamamoto, Mikiko Mori, Yosuke Kuwahara, Takahiro Fujii, Tatsuo Nakao, Shinichiro Kondo, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

    Physica Status Solidi Rapid Research Letter   6 巻 ( 4 ) 頁： 145-147   2012年4月

  425. Development of AlN/diamond heterojunction field effect transistors 査読有り

    Masataka Imura, Ryoma Hayakawa, Hirotaka Ohsato, Eiichiro Watanabe, Daiju Tsuya, Takahiro Nagata, Meiyong Liao, Yasuo Koide, Jun-ichi Yamamoto, Kazuhito Ban, Motoaki Iwaya, Hiroshi Amano

    Diamond and Related Materials   24 巻   頁： 206-209   2012年4月

  426. Indium-Tin Oxide/Al eflective Electrodes for Ultraviolet Light-Emitting Diodes 査読有り

    Kosuke Takehara, Kenichiro Takeda, Shun Ito, Hiroki Aoshima, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Japanese Journal of Applied Physics   51 巻   頁： 042101   2012年4月

  427. Indium-Tin oxide/Al reflective electrodes for ultraviolet light-emitting diodes 査読有り

    Takehara, Kosuke; Takeda, Kenichiro; Ito, Shun; Aoshima, Hiroki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

      51 巻 ( 4 ) 頁： 042101/1-042101/4   2012年4月

  428. Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate 査読有り

    Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Nobuhiko Sawaki

    Physica Status Solidi b   249 巻   頁： 468-471   2012年3月

  429. Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers 査読有り

    Hashimoto Shin; Akita Katsushi; Yamamoto Yoshiyuki, HIroshi Amano

    Physica Status Solidi a   209 巻   頁： 501-504   2012年3月

  430. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes 査読有り

    Tetsuhiko Inazu, Shinya Fukahori, Cyril Pernot, Myung Hee Kim, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Masahito Yamaguchi, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   50 巻   頁： 122101   2011年12月

  431. Dependence of Resonance Energy Transfer on Exciton Dimensionality 査読有り Open Access

    Jan Junis Rindermann, Galia Pozina, Bo Monemar, Lars Hultman, Hiroshi Amano, and Pavlos G. Lagoudakis

    Physical Review Letters   107 巻   頁： 236805   2011年11月

  432. Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate 査読有り

    Applied Physics Express   ４ 巻   頁： 101001   2011年10月

  433. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates 査読有り

    Myunghee Kim, Takehiko Fujita, Shinya Fukahori, Tetsuhiko Inazu, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Masahito Yamaguchi, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Applie Physics Express   4 巻   頁： 092102   2011年9月

  434. AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage 査読有り

    Yoshinori Oshimura, Takayuki Sugiyama, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Japanese Journal of Applied Physics   50 巻   頁： 084102   2011年8月

  435. Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN 査読有り Open Access

    S. Khromov, C. G. Hemmingsson, H. Amano, B. Monemar, L. Hultman, and G. Pozina

    Pysical Review   B84 巻   頁： 075324   2011年8月

  436. Reduction in threshold current density of 355 nm UV laser diodes 査読有り

    Nagata, Kengo; Takeda, Kenichiro; Nonaka, Kentaro; Ichikawa, Tomoki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Yoshida, Harumasa; et al

    Physica Status Solidi C   ８ 巻 ( ５ ) 頁： 1564-1568   2011年8月

  437. Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source 査読有り

    Kawai, Yohjiro; Chen, Shang; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Kondo, Hiroki; Hirmatsu, Mineo; Kano, Hiroyuki; Yamakawa, Koji; Den, Shoji; et al

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁： 2089-2091   2011年7月

  438. AlGaN/GaInN/GaN heterostructure field-effect transistor 査読有り

    Ikki, Hiromichi; Isobe, Yasuhiro; Iida, Daisuke; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Bandoh, Akira; Udagawa, Takashi

    Physica Status Solidi A   208 巻 ( 7 ) 頁： 1614-1616   2011年7月

  439. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes 査読有り

    Pernot, Cyril; Fukahori, Shinya; Inazu, Tetsuhiko; Fujita, Takehiko; Kim, Myunghee; Nagasawa, Yosuke; Hirano, Akira; Ippommatsu, Masamichi; Iwaya, Motoaki; Kamiyama, Satoshi, Amano Hiroshi; et al

    Physica Status Solidi A:   208 巻 ( 7 ) 頁： 1594-1596   2011年7月

  440. Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate 査読有り

    Sugiyama, Takayuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Oshimura, Yoshinori; Iida, Daisuke; Iwaya, Motoaki; Akasaki, Isamu

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁： 2424-2426   2011年7月

  441. GaInN-based solar cells using GaInN/GaInN superlattices 査読有り

    Fujii, Takahiro; Kuwahara, Yousuke; Iida, Daisuke; Fujiyama, Yasuhara; Morita, Yoshiki; Sugiyama, Toru; Isobe, Yasuhiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; et al

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁： 2463-2465   2011年7月

  442. Injection efficiency in AlGaN-based UV laser diodes 査読有り

    Nagata, Kengo; Takeda, Kenichiro; Oshimura, Yoshinori; Takehara, Kosuke; Aoshima, Hiroki; Ito, Shun; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; et al

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁： 2384-2386   2011年7月

  443. Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u-GaN buffer layer 査読有り

    Oshimura, Yoshinori; Sugiyama, Takayuki; Takeda, Kenichiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Physica Status Solidi A   208 巻 ( 7 ) 頁： 1607-1610   2011年7月

  444. Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate 査読有り

    Murase, Tasuku; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁： 2160-2162   2011年7月

  445. Optimization of initial MOVPE growth of non-polar m- and a-plane GAN on Na flux grown LPE-GaN substrates 査読有り

    Isobe, Yasuhiro; Iida, Daisuke; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Imade, Mamoru; Kitaoka, Yasuo; et al

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁： 2095-2097   2011年7月

  446. Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes 査読有り

    Tanikawa, Tomoyuki; Murase, Tasuku; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁： 2038-2040   2011年7月

  447. Transparent electrode for UV light-emitting-diodes 査読有り

    Takehara, Kosuke; Takeda, Kenichiro; Nagata, Kengo; Sakurai, Hisashi; Ito, Shun; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁： 2375-2377   2011年7月

  448. Nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors grown on freestanding GaN substrate 査読有り

    Isobe, Yasuhiro; Ikki, Hiromichi; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Sugiyama, Takayuki; Amano, Hiroshi; Imade, Mamoru; et al

    Applied Physics Express   ４ 巻 ( ６ ) 頁： 064102/1-064102/3   2011年6月

  449. Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes 査読有り Open Access

    Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi A   208 巻 ( 5 ) 頁： 1175-1178   2011年5月

  450. Evidence for moving of threading dislocations during the VPE growth in GaN thin layers 査読有り

    Kuwano, Noriyuki; Miyake, Hideto; Hiramatsu, Kazumasa; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C   8 巻 ( 5 ) 頁： 1487-1490.   2011年5月

  451. Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method 査読有り

    Isobe, Yasuhiro; Iida, Daisuke; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Imade, Mamoru; Kitaoka, Yasuo; et al

    Physica Status Solidi A   208 巻 ( 5 ) 頁： 1191-1194   2011年5月

  452. Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells 査読有り

    Ban, Kazuhito; Yamamoto, Jun-ichi; Takeda, Kenichiro; Ide, Kimiyasu; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   4 巻 ( 5 ) 頁： 052101/1-052101/3   2011年5月

  453. Microstructural analysis of thick AlGaN epilayers using Mg-doped AlN underlying layer 査読有り

    Nonaka, K.; Asai, T.; Ban, K.; Yamamoto, J.; Iwaya, M.; Takeuchi, T.; Kamiyama, S.; Akasaki, I.; Amano, H.; Wu, Z. H.

    Physica Status Solidi C   8 巻 ( 5 ) 頁： 1467-1470   2011年5月

  454. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1-101) semipolar GaN 査読有り

    Wu, Z. H.; Tanikawa, T.; Murase, T.; Fang, Y.-Y.; Chen, C. Q.; Honda, Y.; Yamaguchi, M.; Amano, H.; Sawaki, N.

    Applied Physics Letters   ９８ 巻 ( ５ ) 頁： 051902/1-051902/3   2011年5月

  455. Freestanding highly crystalline single crystal AlN substrates grown by a novel closed sublimation method 査読有り

    Yamakawa, Masayasu; Murata, Kazuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Azuma, Masanobu

    Applied Physics Express   4 巻 ( 4 ) 頁： 045503/1-045503/3   2011年4月

  456. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy 査読有り

    Wu, Z. H.; Kawai, Y.; Fang, Y.-Y.; Chen, C. Q.; Kondo, H.; Hori, M.; Honda, Y.; Yamaguchi, M.; Amano, H.

    Applied Physics Letters   98 巻 ( 14 ) 頁： 141905/1-141905/3   2011年3月

  457. Demonstration of diamond field effect transistors by AlN/diamond heterostructure 査読有り

    Imura, Masataka; Hayakawa, Ryoma; Watanabe, Ei-Ichiro; Liao, Mei-Yong; Koide, Yasuo; Amano, Hiroshi

    Physica Status Solidi RRL:   5 巻 ( 3 ) 頁： 125-127.   2011年3月

  458. Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency 査読有り

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Amano, H.; Pearton, S. J.; Lee, I.-H.; Sun, Q.; Han, J.; Karpov, S. Yu.

    Applied Physics Letters   98 巻 ( 7 ) 頁： 072104/1-072104/3   2011年2月

  459. GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate 査読有り

    Kuwahara, Yousuke; Fujii, Takahiro; Sugiyama, Toru; Iida, Daisuke; Isobe, Yasuhiro; Fujiyama, Yasuharu; Morita, Yoshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi, Amano Hiroshi; et al

    Applied Physics Express   4 巻 ( 2 ) 頁： 021001/1-021001/3   2011年2月

  460. Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer 査読有り

    Takeda, Kenichiro; Nagata, Kengo; Ichikawa, Tomoki; Nonaka, Kentaro; Ogiso, Yuji; Oshimura, Yoshinori; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; et al

    Physica Status Solidi C   8 巻 ( 2 ) 頁： 464-466   2011年2月

  461. Drastic reduction of dislocation density in semipolar (11-.22) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy 査読有り

    Murase, Tasuku; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Sawaki, Nobuhiko

    Japanese Journal of Applied Physics   50 巻 ( 1 ) 頁： 01AD04/1-01AD04/3.   2011年1月

  462. High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate 査読有り

    Sugiyama, Takayuki; Amano, Hiroshi; Iida, Daisuke; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu

    Japanese Journal of Applied Physics   50 巻 ( 1 ) 頁： 01AD03/1-01AD03/3   2011年1月

  463. MBE-VLS growth of catalyst-free III-V axial heterostructure nanowires on (1 1 1)Si substrates 査読有り

    Paek, Jihyun; Yamaguchi, Masahito; Amano, Hiroshi

    Journal of Crystal Growth   323 巻 ( 1 ) 頁： 315-318   2011年1月

  464. Microstructures of GaInN/GaInN superlattices on GaN substrates 査読有り

    Sugiyama, Toru; Kuwahara, Yosuke; Isobe, Yasuhiro; Fujii, Takahiro; Nonaka, Kentaro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   4 巻 ( 1 ) 頁： 015701/1-015701/3.   2011年1月

  465. Realization of nitride-based solar cell on freestanding GaN substrate 査読有り

    Kuwahara, Yosuke; Fujii, Takahiro; Fujiyama, Yasuharu; Sugiyama, Tohru; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   3 巻 ( 11 ) 頁： 111001/1-111001/3   2010年11月

  466. Strain relaxation mechanisms in AlGaN epitaxy on AlN templates 査読有り

    Wu, Zhihao; Nonaka, Kentaro; Kawal, Yohjiro; Asai, Toshiaki; Ponce, Fernando A.; Chen, Changqing; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Applied Physics Express   3 巻 ( 11 ) 頁： 111003/1-111003/3   2010年11月

  467. Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate 査読有り

    Sugiyama, Takayuki; Iida, Daisuke; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C:   7 巻 ( 10 ) 頁： 2419-2422   2010年10月

  468. Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy 査読有り

    Imura, Masataka; Ohnishi, Tsuyoshi; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Amano, Hiroshi; Lippmaa, Mikk

    Physica Status Solidi C   7 巻 ( 10 ) 頁： 2365-2367   2010年10月

  469. Atomic layer epitaxy of AlGaN 査読有り

    Nagamatsu, Kentaro; Iida, Daisuke; Takeda, Kenichiro; Nagata, Kensuke; Asai, Toshiaki; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C:   7 巻 ( 10 ) 頁： 2368-2370   2010年10月

  470. GaInN/GaN p-i-n light-emitting solar cells 査読有り

    Fujiyama, Y.; Kuwahara, Y.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Physica Status Solidi C   7 巻 ( 10 ) 頁： 2382-2385.   2010年10月

  471. Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate 査読有り

    Sugiyama, T.; Iida, D.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁： 1980-1982   2010年7月

  472. AlGaN/GaN HFETs on Fe-doped GaN substrates 査読有り

    Oshimura, Yoshinori; Takeda, Kenichiro; Sugiyama, Takayuki; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Bandoh, Akira; Udagawa, Takashi

    Physica Status Solidi C   ７ 巻 ( ７－８ ) 頁： 1974-1976   2010年7月

  473. Growth and characterization of GaN grown on moth-eye patterned sapphire substrates 査読有り Open Access

    Ishihara, Akihiro; Kawai, Ryousuke; Kitano, Thukasa; Suzuki, Atushi; Kondo, Toshiyuki; Iwaya, Motoaki; Amano, Hiroshi; Kamiyama, Satoshi; Akasaki, Isamu

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁： 2056-2058   2010年7月

  474. Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy 査読有り

    Iida, Daisuke; Nagata, Kensuke; Makino, Takafumi; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Bandoh, Akira; Udagawa, Takashi

    Applied Physics Express   3 巻 ( 7 ) 頁： 075601/1-075601/2   2010年7月

  475. Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer 査読有り

    Asai, T.; Nonaka, K.; Ban, K.; Nagata, K.; Nagamatsu, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁： 2101-2103   2010年7月

  476. Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers 査読有り

    Takeda, Kenichiro; Mori, Fumiaki; Ogiso, Yuji; Ichikawa, Tomoaki; Nonaka, Kentaro; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁： 1916-1918   2010年7月

  477. Mg-related acceptors in GaN 査読有り

    Monemar, B.; Paskov, P. P.; Pozina, G.; Hemmingsson, C.; Bergman, J. P.; Amano, H.; Akasaki, I.; Figge, S.; Hommel, D.; et al.

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁： 1850-1852   2010年7月

  478. Nitride-based light-emitting solar cell 査読有り

    Kuwahara, Y.; Fujiyama Y; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I

    Physica Status Solidi C   ７ 巻 ( 7-8 ) 頁： 1807-1809   2010年7月

  479. Study of two-dimensional electron gas in AlGaN channel HEMTs with high crystalline quality 査読有り

    Hashimoto, Shin; Akita, Katsushi; Tanabe, Tatsuya; Nakahata, Hideaki; Takeda, Kenichiro; Amano, Hiroshi

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁： 1938-1940   2010年7月

  480. Improved efficiency of 255-280 nm AlGaN-based light-emitting diodes 査読有り

    Pernot, Cyril; Kim, Myunghee; Fukahori, Shinya; Inazu, Tetsuhiko; Fujita, Takehiko; Nagasawa, Yosuke; Hirano, Akira; Ippommatsu, Masamichi; Iwaya, Motoaki; Kamiyama, Satoshi,Hiroshi Amano et al

    Applied Physics Express   3 巻 ( 6 ) 頁： 061004/1-061004/3   2010年6月

  481. Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy 査読有り

    Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Journal of Crystal Growth   312 巻 ( 21 ) 頁： 3131-3135.   2010年6月

  482. Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO 査読有り

    Wu, Z. H.; Sun, K. W.; Wei, Q. Y.; Fischer, A. M.; Ponce, F. A.; Kawai, Y.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Applied Physics Letters   96 巻 ( ７ ) 頁： 071909/1-071909/3   2010年3月

  483. Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy 査読有り

    Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

    Diamond and Related Materials   19 巻 ( 0 ) 頁： 131-133   2010年2月

  484. High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient 査読有り

    Nagata, Kengo, Ichikawa, Tomoki, Takeda, Kenichiro, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Physica Status Solidi A:   207 巻 ( 0 ) 頁： 1393-1396   2010年

  485. MOVPE法により成長したa面及びc面MgドープGaNにおける補償効果 査読有り

    飯田大輔、田村健太、岩谷素顕、天野浩、上山智、赤﨑勇

      312 巻 ( 21 ) 頁： 3131-3135   2010年

  486. Defects in highly Mg-doped AlN 査読有り

    Nonaka, Kentaro, Asai, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Physica Status Solidi A   207 巻 ( 0 ) 頁： 1299-1301   2010年

  487. Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy 査読有り

    Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

    Journal of Crystal Growth   312 巻 ( 0 ) 頁： 368-372   2010年

  488. Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy 査読有り

    Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

    Journal of Crystal Growth   312 巻 ( 0 ) 頁： 1325-1328   2010年

  489. III族窒化物半導体へのp型ドーピングと結晶欠陥 招待有り 査読有り Open Access

    天野　浩、岩谷　素顕、上山　智、赤﨑　勇

    日本結晶成長学会誌   36 巻 ( 3 ) 頁： 200-204   2009年3月

  490. Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers 査読有り

    Murotani, Hideaki, Kuronaka, Takahiro, Yamada, Yoichi, Taguchi, Tsunemasa, Okada, Narihito, Amano, Hiroshi

    Journal of Applied Physics   105 巻 ( 0 ) 頁： 083533/1-083533/6   2009年

  491. Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17) 査読有り

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Physica Status Solidi B:   246 巻 ( 0 ) 頁： 1188-1190   2009年

  492. Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters 査読有り

    Mori, T., Nagamatsu, K., Nonaka, K., Takeda, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.

    Physica Status Solidi C   6 巻 ( 0 ) 頁： 2621-2625   2009年

  493. Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films 査読有り

    Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Petrova, E. A., Amano, H., Kawashima, T., Scherbatchev, K. D., Bublik, V. T.

    Journal of Applied Physics   105 巻 ( 0 ) 頁： 063708/1-063708/9   2009年

  494. Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth 査読有り

    Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yakimov, E. B., Vergeles, P. S., Amano, H., Kawashima, T.

    Journal of Crystal Growth   311 巻 ( 0 ) 頁： 2923-2925   2009年

  495. Evidence for two Mg related acceptors in GaN 査読有り

    Monemar B, Paskov P P, Pozina G, Hemmingsson C, Bergman J P, Kawashima T, Amano H, Akasaki I, Paskova T, Figge S, et al

    Physical review letters   102 巻 ( 0 ) 頁： 235501/1-235501/4   2009年

  496. Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields 査読有り Open Access

    Esmaeili, M., Gholami, M., Haratizadeh, H., Monemar, B., Holtz, P. O., Kamiyama, S., Amano, H., Akasaki, I.

    Opto-Electronics Review   17 巻 ( 0 ) 頁： 293-299   2009年

  497. Growth of thick GaInN on grooved (1011) GaN/(1012) 4H-SiC 査読有り

    Matsubara, Tetsuya, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   311 巻 ( 0 ) 頁： 2926-2928   2009年

  498. High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer 査読有り

    Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al

    Physica Status Solidi A   206 巻 ( 0 ) 頁： 1199-1204   2009年

  499. InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy 査読有り

    Kawai, Yohjiro, Ohsuka, Shinya, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   311 巻 ( 0 ) 頁： 2929-2932   2009年

  500. Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN 査読有り

    Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.

    Applied Physics Express   2 巻 ( 0 ) 頁： 041002/1-041002/3   2009年

  501. Novel UV devices on high-quality AlGaN using grooved underlying layer 査読有り

    Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al

    Journal of Crystal Growth   311 巻 ( 0 ) 頁： 2860-2863   2009年

  502. One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy 査読有り

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   311 巻 ( 0 ) 頁： 2887-2890   2009年

  503. Optimization of electrode configuration in large GaInN light-emitting diodes 査読有り

    Ochiai, Wataru, Kawai, Ryosuke, Suzuki, Atsushi, Iwaya, Motoaki, Amano, Hiroshi, Kamiyama, Satoshi, Akasaki, Isamu

    Physica Status Solidic   6 巻 ( 0 ) 頁： 1416-1419   2009年

  504. Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer 査読有り

    Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   311 巻 ( 0 ) 頁： 2850-2852   2009年

  505. Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN 査読有り

    Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Applied Physics Express   2 巻 ( 0 ) 頁： 061004/1-061004/3   2009年

  506. Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates 査読有り

    Imura Masataka, Sugimura Hiroki, Okada Narihito, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira

    J. Crystal Growth   310 巻 ( 0 ) 頁： 2308-2313   2008年

  507. High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN 査読有り

    Nagamatsu Kentaro, Okada Narihito, Sugimura Hiroki, Tsuzuki Hirotoshi, Mori Fumiaki, Iida Kazuyoshi, Bando Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   310 巻 ( 0 ) 頁： 2326-2329   2008年

  508. AlN and AlGaN by MOVPE for UV light emitting devices 査読有り

    Amano, Hiroshi, Imura, Masataka, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu

    Materials Science Forum   590 巻 ( 0 ) 頁： 175-210   2008年

  509. Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode 査読有り

    Akasaki, Isamu, Amano, Hiroshi

    Japanese Journal of Applied Physics   47 巻 ( 0 ) 頁： 3781   2008年

  510. Control of p-type conduction in a-plane Ga1-xInxN (0 < x < 0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy 査読有り

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   310 巻 ( 0 ) 頁： 4996-4998   2008年

  511. Control of stress and crystalline quality in GaInN films used for green emitters 査読有り

    Iwaya, Motoaki, Miura, Aya, Senda, Ryota, Nagai, Tetsuya, Kawashima, Takeshi, Iida, Daisuke, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   310 巻 ( 0 ) 頁： 4920-4922   2008年

  512. Dynamical study of the radiative recombination processes in GaN/AlGaN QWs 査読有り

    Sabooni, Mahmood, Esmaeili, Morteza, Haratizadeh, Hamid, Monemar, Bo, Amano, Hiroshi

    Journal of Materials Science: Materials in Electronics   19 巻 ( 0 ) 頁： S316-S318   2008年

  513. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates 査読有り Open Access

    Pozina, G., Hemmingsson, C., Paskov, P. P., Bergman, J. P., Monemar, B., Kawashima, T., Amano, H., Akasaki, I., Usui, A.

    Applied Physics Letters   92 巻 ( 0 ) 頁： 151904/1-151904/3   2008年

  514. High hole concentration in Mg-doped a-plane Ga1-xInxN (0<x<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy 査読有り

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Applied Physics Letters   93 巻 ( 0 ) 頁： 182108/1-182108/3   2008年

  515. All MOVPE grown nitride-based LED having sub mm underlying GaN 査読有り

    Tanaka Y., Ando J., Iida D., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   5 巻 ( 0 ) 頁： 3073-3075   2008年

  516. Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE 査読有り

    Nagamatsu Kentaro, Okada Narihito, Kato Naofumi, Sumii Takafumi, Bandoh Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Physica Status Solidi C   5 巻 ( 0 ) 頁： 3048-3050   2008年

  517. Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth 査読有り

    Senda Ryota, Miura Aya, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Physica Status Solidi C   5 巻 ( 0 ) 頁： 3045-3047   2008年

  518. InGaN growth on ZnO (0001) substrate by metalorganic vapor phase epitaxy 査読有り

    Kawai Y., Ohsuka S., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   5 巻 ( 0 ) 頁： 3023-3025   2008年

  519. Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates 査読有り

    Miura Aya, Nagai Tetsuya, Senda Ryota, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    J. Crystal Growth   310 巻 ( 0 ) 頁： 3308-3312   2008年

  520. Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth 査読有り

    Kawashima T., Hayakawa T., Hayashi M., Nagai T., Iida D., Miura A., Kasamatsu Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   5 巻 ( 0 ) 頁： 2145-2147   2008年

  521. Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire 査読有り

    Iida K., Watanabe H., Takeda K., Mori F., Tsuzuki H., Yamashita Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.

    Physica Status Solidi C   5 巻 ( 0 ) 頁： 2142-2144   2008年

  522. High drain current and low on resistance normally-off-mode AlGaN/GaN junction HFETs with a p-type GaN gate contact. 査読有り

    Fujii T., Nakamura S., Mizuno K., Nega R., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   5 巻 ( 0 ) 頁： 1906-1909   2008年

  523. Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth. Optical evidences for a reduced stacking fault density 査読有り

    Paskov P. P., Monemar B., Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   5 巻 ( 0 ) 頁： 1768-1770   2008年

  524. Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates 査読有り

    Imura M., Sugimura H., Okada N., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bando A.

    Physica Status Solidi C   5 巻 ( 0 ) 頁： 1582-1584   2008年

  525. Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy 査読有り

    Iida Daisuke, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Physica Status Solidi C   5 巻 ( 0 ) 頁： 1575-1578   2008年

  526. Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy 査読有り

    Kato Naofumi, Sato S., Sugimura H., Sumii T., Okada N., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.

    Physica Status Solidi C   5 巻 ( 0 ) 頁： 1559-1561   2008年

  527. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates 査読有り Open Access

    Pozina G., Hemmingsson C., Paskov P. P., Bergman J. P., Monemar B., Kawashima T., Amano H., Akasaki I., Usui A.

    Appl. Phys. Lett.   92 巻 ( 0 ) 頁： 151904/1-151904/3   2008年

  528. Photoluminescence from highly excited AlN epitaxial layers. 査読有り

    Yamada Yoichi, Choi Kihyun, Shin Seungho, Murotani Hideaki, Taguchi Tsunemasa, Okada Narihito, Amano Hiroshi

    Appl. Phys. Lett.   92 巻 ( 0 ) 頁： 131912/1-131912/3   2008年

  529. Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen 査読有り

    Kamei K., Shirai Y., Tanaka T., Okada N., Yauchi A., Amano H..

    Physica Status Solidi C:   4 巻 ( 0 ) 頁： 2211-2214   2007年

  530. Epitaxial lateral overgrowth of AlxGa1-xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices 査読有り

    Iida Kazuyoshi, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira.

    J. Crystal Growth   298 巻 ( 0 ) 頁： 265-267   2007年

  531. Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates 査読有り

    Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    J. Crystal Growth   298 巻 ( 0 ) 頁： 261-264   2007年

  532. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers 査読有り

    Imura Masataka, Nakano Kiyotaka, Narita Gou, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    J. Crystal Growth   298 巻 ( 0 ) 頁： 257-260   2007年

  533. High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE 査読有り

    Kato N., Sato S., Sumii T., Fujimoto N., Okada N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.

    J. Crystal Growth   298 巻 ( 0 ) 頁： 215-218   2007年

  534. Reduction in defect density over whole area of (1-100) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth. 査読有り

    Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi B   244 巻 ( 0 ) 頁： 1848-1852   2007年

  535. Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X-ray diffraction analyses. 査読有り Open Access

    Inaba Katsuhiko, Amano Hiroshi.

    Physica Status Solidi B   244 巻 ( 0 ) 頁： 1775-1779   2007年

  536. Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum well 査読有り

    Haratizadeh H., Monemar B., Paskov Plamen P., Holtz Per Olof, Valcheva E., Persson P., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi B   244 巻 ( 0 ) 頁： 1727-1734   2007年

  537. One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters 査読有り

    Iida D., Miura A., Okadome Y., Tsuchiya Y., Kawashima T., Nagai T., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi A   204 巻 ( 0 ) 頁： 2005-2009   2007年

  538. High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate 査読有り

    Iida K., Watanabe H., Takeda K., Nagai T., Sumii T., Nagamatsu K., Kawashima T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bandoh A.

    Physica Status Solidi A   204 巻 ( 0 ) 頁： 2000-2004   2007年

  539. Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces. 査読有り Open Access

    Valcheva E., Dimitrov S., Monemar B., Haratizadeh H., Persson P. O. A., Amano H., Akasaki I.

    Acta Physica Polonica, A   112 巻 ( 0 ) 頁： 395-400   2007年

  540. Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques 査読有り

    Chichibu S. F., Uedono A., Onuma T., Haskell B. A., Chakraborty A., Koyama T., Fini P. T., Keller S., Denbaars S. P., Speck J. S., Mishra U. K., Nakamura S., Yamaguchi S., Kamiyama S., Amano H., Akasaki I., Han J., Sota T.

    Philosophical Magazine   87 巻 ( 0 ) 頁： 2019-2039   2007年

  541. Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. Sapphire substrate. 査読有り

    Yoshida Harumasa, Takagi Yasufumi, Kuwabara Masakazu, Amano Hiroshi, Kan Hirofumi.

    Jpn. J. Appl. Phys.   46 巻 ( 0 ) 頁： 5782-5784   2007年

  542. Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy 査読有り

    Balakrishnan Krishnan, Bandoh Akria, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   46 巻 ( 0 ) 頁： L307-L310   2007年

  543. Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy 査読有り

    Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    Jpn. J. Appl. Phys.   46 巻 ( 0 ) 頁： 1458-1462   2007年

  544. Control of threshold voltage of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact 査読有り

    Fujii Takahiro, Tsuyukuchi Norio, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   46 巻 ( 0 ) 頁： 115-118   2007年

  545. Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping. 査読有り

    Esmaeili M., Haratizadeh H., Monemar B., Paskov P. P., Holtz P. O., Bergman P., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Nanotechnology   18 巻 ( 0 ) 頁： 025401/1-025401/6   2007年

  546. Fabrication of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact 査読有り

    Fujii T., Tsuyukuchi N., Hirose Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   4 巻 ( 0 ) 頁： 2708-2711   2007年

  547. Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy 査読有り

    Okada N., Imura M., Nagai T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi C   4 巻 ( 0 ) 頁： 2528-2531   2007年

  548. Mg-doped high-quality AlxGa1-xN (x = 0-1) grown by high-temperature metal-organic vapor phase epitaxy 査読有り

    Imura M., Kato N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi C   4 巻 ( 0 ) 頁： 2502-2505   2007年

  549. Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE 査読有り

    Balakrishnan K., Iida K., Bandoh A., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   4 巻 ( 0 ) 頁： 2272-2276   2007年

  550. Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio 査読有り

    Imura Masataka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    J. Crystal Growth   300 巻 ( 0 ) 頁： 136-140   2007年

  551. Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates 査読有り

    Pozina G., Paskov P. P., Bergman J. P., Hemmingsson C., Hultman L., Monemar B., Amano H., Akasaki I., Usui A.

    Appl. Phys. Lett.   91 巻 ( 0 ) 頁： 221901/1-221901/3   2007年

  552. Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates 査読有り

    Pozina G., Monemar B., Paskov P. P., Hemmingsson C., Hultman L., Amano H., Akasaki I., Paskova T., Figge S., Hommel D., Usui A.

    Physica B   401-402 巻 ( 0 ) 頁： 302-306   2007年

  553. Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth 査読有り

    Senda Ryota, Miura Aya, Hayakawa Takemasa, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   46 巻 ( 0 ) 頁： L948-L950   2007年

  554. Dependence of DAP emission properties on impurity concentrations in N-/B-co-doped 6H-SiC. 査読有り

    Murata Satoshi, Nakamura Yoshihiro, Maeda Tomohiko, Shibata Yoko, Ikuta Mina, Sugiura Masaaki, Nitta Shugo, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Yoshimoto Masahiro, Furusho Tomoaki, Kinoshita Hiroyuki.

    Materials Science Forum   556-557 巻 ( 0 ) 頁： 335-338   2007年

  555. Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification 査読有り

    Okada N., Kato N., Sato S., Sumii T., Nagai T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Noro T., Bandoh A.

    J. Crystal Growth   298 巻 ( 0 ) 頁： 349-353   2007年

  556. Microstructure in nonpolar m-plane GaN and AlGaN films 査読有り

    Nagai T., Kawashima T., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    J. Crystal Growth   298 巻 ( 0 ) 頁： 288-292   2007年

  557. Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE 査読有り

    Okada N., Kato N., Sato S., Sumii T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Bandoh A.

    J. Crystal Growth   300 巻 ( 0 ) 頁： 141-144   2007年

  558. Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates 査読有り

    Balakrishnan K., Fujimoto N., Kitano T., Bandoh A., Imura M., Nakano K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Shimono K., Riemann T., Christen J.

    Physica Status Solidi C   3 巻 ( 0 ) 頁： 1392-1395   2006年

  559. A hydrogen-related shallow donor in GaN? 査読有り

    Monemar B., Paskov P. P., Bergman J. P., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica B   376-377 巻 ( 0 ) 頁： 460-463   2006年

  560. Dominant shallow acceptor enhanced by oxygen doping in GaN 査読有り

    Monemar B., Paskov P. P., Tuomisto F., Saarinen K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kimura S.

    Physica B   376-377 巻 ( 0 ) 頁： 440-443   2006年

  561. Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate 査読有り

    Imura M., Honshio A., Miyake Y., Nakano K., Tsuchiya N., Tsuda M., Okadome Y., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica B   376-377 巻 ( 0 ) 頁： 491-495   2006年

  562. Dominant shallow acceptor enhanced by oxygen doping in GaN 査読有り

    Monemar B, Paskov P P, Tuomisto F, Saarinen K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Kimura S

    Physica B   376-377 巻 ( 0 ) 頁： 440-443   2006年

  563. 6H-SiC homoepitaxial growth and optical property of boron- and nitrogen-doped donor-acceptor pair (DAP) emission on 1° -off substrate by closed-space sublimation method 査読有り

    Kawai Y., Maeda T., Nakamura Y., Sakurai Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Yoshimoto M., Furusho T., Kinoshita H., Shiomi H.

    Materials Science Forum   527 巻 ( 0 ) 頁： 263-266   2006年

  564. Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure 査読有り

    Iwaya M., Kasugai H., Kawashima T., Iida K., Honshio A., Miyake Y., Kamiyama S., Amano H., Akasaki I.

    Thin Solid Films   515 巻 ( 0 ) 頁： 768-770   2006年

  565. X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN 査読有り

    Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Physica Status Solidi B   243 巻 ( 0 ) 頁： 1524-1528   2006年

  566. Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates 査読有り

    Nakano K., Imura M., Narita G., Kitano T., Hirose Y., Fujimoto N., Okada N., Kawashima T., Iida K., Balakrishnan K., Tsuda M., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi A   203 巻 ( 0 ) 頁： 1632-1635   2006年

  567. Microstructure of thick AlN grown on sapphire by high-temperature MOVPE 査読有り

    Imura M., Nakano K., Kitano T., Fujimoto N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi A   203 巻 ( 0 ) 頁： 1626-1631   2006年

  568. Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells 査読有り

    Haratizadeh Hamid, Monemar Bo, Amano Hiroshi

    Physica Status Solidi A   203 巻 ( 0 ) 頁： 149-153   2006年

  569. Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC 査読有り

    Kamiyama S., Maeda T., Nakamura Y., Iwaya M., Amano H., Akasaki I., Kinoshita H., Furusho T., Yoshimoto M., Kimoto T., Suda J., Henry A., Ivanov I. G., Bergman J. P., Monemar B., Onuma T., Chichibu S. F.

    J. Apl. Phys.   99 巻 ( 0 ) 頁： 093108/1-093108/4   2006年

  570. Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy 査読有り

    Imura M., Nakano K., Kitano T., Fujimoto N., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.

    Appl. Phys. Lett.   89 巻 ( 0 ) 頁： 221901/1-221901/2   2006年

  571. Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact 査読有り

    Tsuyukuchi Norio, Nagamatsu Kentaro, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   45 巻 ( 0 ) 頁： L319-L321   2006年

  572. High on/off ratio in enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with P-type GaN gate contact 査読有り

    Fujii Takahiro, Tsuyukuchi Norio, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   45 巻 ( 0 ) 頁： L1048-L1050   2006年

  573. Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode 査読有り

    Akasaki Isamu, Amano Hiroshi.

    Jpn. J. Appl. Phys.   45 巻 ( 0 ) 頁： 9001-9010   2006年

  574. High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio 査読有り

    Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    Jpn. J. Appl. Phys.   45 巻 ( 0 ) 頁： 8639-8643   2006年

  575. Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire 査読有り

    Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   45 巻 ( 0 ) 頁： 2509-2513   2006年

  576. Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy 査読有り

    Okada Narihito, Fujimoto Naoki, Kitano Tsukasa, Narita Gou, Imura Masataka, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Shimono Kenji, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    Jpn. J. Appl. Phys.   45 巻 ( 0 ) 頁： 2502-2504   2006年

  577. Effect of UV irradiation by UV LED on the apoptosis and necrosis of Jurkat cells 査読有り

    Inada Shunko Albano, Amano Hiroshi, Akasaki Isamu, Morita Akinori, Kobayashi Keiko.

    Meijo Daigaku Sogo Kenkyusho Sogo Gakujutsu Kenkyu Ronbunshu   5 巻 ( 0 ) 頁： 73-77   2006年

  578. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors 査読有り

    Chichibu Shigefusa F., Uedono Akira, Onuma Takeyoshi, Haskell Benjamin A., Chakraborty Arpan, Koyama Takahiro, Fini Paul T., Keller Stacia, DenBaars Steven P., Speck James S., Mishra Umesh K., Nakamura Shuji, Yamaguchi Shigeo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Han Jung, Sota Takayuki. O

    Nature Materials   5 巻 ( 0 ) 頁： 810-816   2006年

  579. Growth of high-quality AlN at high growth rate by high-temperature MOVPE 査読有り

    Fujimoto N., Kitano T., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi C   3 巻 ( 0 ) 頁： 1617-1619   2006年

  580. Light extraction process in moth-eye structure 査読有り

    Kasugai H., Nagamatsu K., Miyake Y., Honshio A., Kawashima T., Iida K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kinoshita H., Shiomi H.

    Physica Status Solidi C   3 巻 ( 0 ) 頁： 2165-2168   2006年

  581. Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells 査読有り

    Arnaudov B., Paskov P. P., Haratizadeh H., Holtz P. O., Monemar B., Kamiyama S., Iwaya M., Amano H., Akasaki I.

    Physica Status Solidi C   3 巻 ( 0 ) 頁： 1888-1891   2006年

  582. Polarity and microstructure in InN thin layers grown by MOVPE 査読有り

    Kuwano N., Nakahara Y., Amano H..

    Physica Status Solidi C   3 巻 ( 0 ) 頁： 1523-1526   2006年

  583. Photoluminescence of GaN/AlN superlattices grown by MOCVD 査読有り

    PP Paskov JP Bergman V Darakchieva T Paskova B Monemar M IwayaS Kamiyama H Amano and I Akasaki

    Physica Status Solidi C: Current Topics in Solid State Physics   2 巻 ( 0 ) 頁： pp2345-2348   2005年

  584. Optical properties of InN related to surface plasmons 査読有り Open Access

    Shubina T V, Leymarie J, Jmerik V N, Toropov A A, Vasson A, Amano H, Schaff W J, Monemar B, Ivanov S V

    Physica Status Solidi A   202 巻 ( 0 ) 頁： 2633-2641   2005年

  585. CBED study of grain misorientations in AlGaN epilayers 査読有り

    Sahonta S-L, Cherns D, Liu R, Ponce F A, Amano H, Akasaki I

    Ultramicroscopy   103 巻 ( 0 ) 頁： 23-32   2005年

  586. Phonon mode behavior in strained wurtzite AlN/GaN superlattices 査読有り

    Darakchieva V, Valcheva E, Paskov P P, Schubert M, Paskova T, Monemar B, Amano H, Akasaki I

    Physical Review B   71 巻 ( 0 ) 頁： 115329/1-115329/9   2005年

  587. High-rate growth of films of dense, aligned double-walled carbon nanotubes using microwave plasma-enhanced chemical vapor deposition 査読有り

    Hiramatsu Mineo, Nagao Hidetoshi, Taniguchi Masaki, Amano Hiroshi, Ando Yoshinori, Hori Masaru

    Jpn. J. Appl. Phys.   44 巻 ( 0 ) 頁： L693-L695   2005年

  588. Control of p-type conduction in a-plane GaN grown on sapphire r-plane substrate 査読有り

    Tsuchiya Yosuke, Okadome Yoshizane, Honshio Akira, Miyake Yasuto, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   44 巻 ( 0 ) 頁： L1516-L1518   2005年

  589. Flat (11-20) GaN thin film on precisely offset-controlled (11-02) sapphire substrate 査読有り

    Imura Masataka, Hoshino Akira, Nakano Kiyotaka, Tsuda Michinobu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   44 巻 ( 0 ) 頁： 7418-7420   2005年

  590. High-efficiency nitride-based light-emitting diodes with moth-eye structure 査読有り

    Kasugai Hideki, Miyake Yasuto, Honshio Akira, Mishima Shunsuke, Kawashima Takeshi, Iida Kazuyoshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Kinoshita Hiroyuki, Shiomi Hiromu

    Jpn. J. Appl. Phys.   44 巻 ( 0 ) 頁： 7414-7417   2005年

  591. Impact of H2-preannealing of the sapphire substrate on the crystallinity of low-temperature-deposited AlN buffer layer 査読有り

    Tsuda Michinobu, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   44 巻 ( 0 ) 頁： 3913-3917   2005年

  592. Vertical growth of carbon nanowalls using rf plasma-enhanced chemical vapor deposition 査読有り

    Shiji K, Hiramatsu M, Enomoto A, Nakamura M, Amano H, Hori M

    Diamond and Related Materials   14 巻 ( 0 ) 頁： 831-834   2005年

  593. UV laser diode with 3509-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology 査読有り

    Kamiyama Satoshi, Iida Kazuyoshi, Kawashima Takeshi, Kasugai Hideki, Mishima Shunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu

    IEEE Journal of Selected Topics in Quantum Electronics   11 巻 ( 0 ) 頁： 1069-1073   2005年

  594. Free-to-bound radiative recombination in highly conducting InN epitaxial layers 査読有り

    Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I

    Superlattices and Microstructures   36 巻 ( 0 ) 頁： 563-571   2004年

  595. Mie Resonances, Infrared Emission, and the Band Gap of InN 査読有り

    Shubina T V, Ivanov S V, Jmerik V N, Solnyshkov D D, Vekshin V A, Kop'ev P S, Vasson A, Leymarie J, Kavokin A, Amano H, Shimono K, Kasic A, Monemar B

    Physical Review Letters   92 巻 ( 0 ) 頁： 117407/1-117407/4   2004年

  596. The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films 査読有り

    Cherns D, Sahonta S-L, Liu R, Ponce F A, Amano H, Akasaki I

    Appl. Phys. Lett.   85 巻 ( 0 ) 頁： 4923-4925   2004年

  597. Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth 査読有り

    Bell A, Liu R, Parasuraman U K, Ponce F A, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   85 巻 ( 0 ) 頁： 3417-3419   2004年

  598. Photoluminescence study of Si-doped GaN/Al007Ga093N multiple quantum wells with different dopant position 査読有り

    Haratizadeh H, Monemar B, Paskov P P, Bergman J P, Sernelius B E, Holtz P O, Iwaya M, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   84 巻 ( 0 ) 頁： 5071-5073   2004年

  599. Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection 査読有り

    Hiramatsu M, Shiji K, Amano H, Hori M

    Appl. Phys. Lett.   84 巻 ( 0 ) 頁： 4708-4710   2004年

  600. Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels 査読有り

    Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   69 巻 ( 0 ) 頁： 115216/1-115216/5   2004年

  601. 3509 nm UV laser diode grown on low-dislocation-density AlGaN 査読有り

    Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters & Express Letters   43 巻 ( 0 ) 頁： L499-L500   2004年

  602. Study on the seeded growth of AlN bulk crystals by sublimation 査読有り

    Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Takagi Takashi, Noro Tadashi

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   43 巻 ( 0 ) 頁： 7448-7453   2004年

  603. Optical investigation of AlGaN/GaN quantum wells and superlattices 査読有り

    Monemar B, Paskov P P, Haradizadeh H, Bergman J P, Valcheva E, Darakchieva V, Arnaudov B, Paskova T, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   201 巻 ( 0 ) 頁： 2251-2258   2004年

  604. High-quality Al012Ga088N film with low dislocation density grown on facet-controlled Al012Ga088N by MOVPE 査読有り

    Kawashima Takeshi, Iida Kazuyoshi, Miyake Yasuto, Honshio Akira, Kasugai Hideki, Imura Masataka, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   272 巻 ( 0 ) 頁： 377-380   2004年

  605. Laser diode of 3509nm wavelength grown on sapphire substrate by MOVPE 査読有り

    Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   272 巻 ( 0 ) 頁： 270-273   2004年

  606. Time resolved photoluminescence study of Si modulation doped GaN/Al093N multiple quantum wells 査読有り

    Haratizadeh H, Monemar B, Paskov P P, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   241 巻 ( 0 ) 頁： 1124-1133   2004年

  607. Defect and stress control of AlGaN for fabrication of high performance UV light emitters 査読有り

    Amano H, Miyazaki A, Iida K, Kawashima T, Iwaya M, Kamiyama S, Akasaki I, Liu R, Bell A, Ponce F A, Sahonta S, Cherns D

    Physica Status Solidi A: Applied Research   201 巻 ( 0 ) 頁： 2679-2685   2004年

  608. Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements 査読有り

    Takeda Y, Tabuchi M, Amano H, Akasaki I

    Surface Review and Letters   10 巻 ( 0 ) 頁： 537-541   2003年

  609. Growth-induced defects in AlN/GaN superlattices with different periods 査読有り

    Valcheva E, Paskova T, Radnoczi G Z, Hultman L, Monemar B, Amano H, Akasaki I

    Physica B: Condensed Matter AmsterdamNetherlands   340-342 巻 ( 0 ) 頁： 1129-1132   2003年

  610. Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I

    J. Crystal Growth   248 巻 ( 0 ) 頁： 503-506   2003年

  611. Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN 査読有り

    Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Itoh T, McCreery R L, Murakami Masanori, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   240 巻 ( 0 ) 頁： 356-359   2003年

  612. Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures 査読有り

    Monemar B, Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   237 巻 ( 0 ) 頁： 353-364   2003年

  613. Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE 査読有り

    Tsuda Michinobu, Watanabe Kenichi, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Liu Rong, Bell Abigail, Ponce Fernando A

    Applied Surface Science   216 巻 ( 0 ) 頁： 585-589   2003年

  614. Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy 査読有り

    Tomida Yoshihito, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Otani Shigeki, Kinoshita Hiroyuki, Liu Rong, Bell Abigail, Ponce Fernando A

    Applied Surface Science   216 巻 ( 0 ) 頁： 502-507   2003年

  615. Violet and UV light-emitting diodes grown on ZrB2 substrate 査読有り

    Kamiyama S, Takanami S, Tomida Y, Iida K, Kawashima T, Fukui S, Iwaya M, Kinoshita H, Matsuda T, Yasuda T, Otani S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   200 巻 ( 0 ) 頁： 67-70   2003年

  616. Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN 査読有り

    Iwaya M, Takanami S, Miyazaki A, Kawashima T, Iida K, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   200 巻 ( 0 ) 頁： 110-113   2003年

  617. Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields 査読有り

    Monemar B, Paskov P P, Haratizadeh H, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   195 巻 ( 0 ) 頁： 523-527   2003年

  618. Group III nitride-based UV light emitting devices 査読有り

    Amano H, Takanami S, Iwaya M, Kamiyama S, Akasaki I

    Physica Status Solidi A: Applied Research   195 巻 ( 0 ) 頁： 491-495   2003年

  619. Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy 査読有り

    Onuma T, Chichibu S F, Uchinuma Y, Sota T, Yamaguchi S, Kamiyama S, Amano H, Akasaki I

    J. Apl. Phys.   94 巻 ( 0 ) 頁： 2449-2453   2003年

  620. Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates 査読有り

    Sumiya M, Ogusu N, Yotsuda Y, Itoh M, Fuke S, Nakamura T, Mochizuki S, Sano T, Kamiyama S, Amano H, Akasaki I

    J. Apl. Phys.   93 巻 ( 0 ) 頁： 1311-1319   2003年

  621. Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire 査読有り

    Bell A, Liu R, Ponce F A, Amano H, Akasaki I, Cherns D

    Appl. Phys. Lett.   82 巻 ( 0 ) 頁： 349-351   2003年

  622. High-power UV-light-emitting diode on sapphire 査読有り

    Iwaya Motoaki, Takanami Shun, Miyazaki Atsushi, Watanabe Yasuhiro, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   42 巻 ( 0 ) 頁： 400-403   2003年

  623. ZrB2 substrate for nitride semiconductors 査読有り

    Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Hiroyuki

    Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers   42 巻 ( 0 ) 頁： 2260-2264   2003年

  624. Piezoelectric effect in group-III nitride-based heterostructures and quantum wells 査読有り

    Takeuchi T, Wetzel C, Amano H, Akasaki I

    Optoelectronic Properties of Semiconductors and Superlattices   16 巻 ( 0 ) 頁： 399-438   2003年

  625. Structural analysis of Si-doped AlGaN/GaN multi-quantum wells 査読有り

    Nakamura Tetsuya, Mochizuki Shingo, Terao Shinji, Sano Tomoaki, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   237-239 巻 ( 0 ) 頁： 1129-1132   2002年

  626. Photoluminescence and electroluminescence characterization of InxGa1-xN/InyGa1-yN multiple quantum well light emitting diodes 査読有り

    Bergman J P, Pozina G, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Materials Science Forum   389-393 巻 ( 0 ) 頁： 1493-1496   2002年

  627. MOVPE growth and characterization of Al1-xInxN/GaN multiple layers 査読有り

    Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Watanabe Yasuhiro, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   237-239 巻 ( 0 ) 頁： 968-971   2002年

  628. Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN 査読有り

    Iwaya Motoaki, Terao Shinji, Sano Tomoaki, Ukai Tsutomu, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   237-239 巻 ( 0 ) 頁： 951-955   2002年

  629. Relaxation of misfit-induced stress in nitride-based heterostructures 査読有り

    Terao Shinji, Iwaya Motoaki, Sano Tomoaki, Nakamura Tetsuya, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   237-239 巻 ( 0 ) 頁： 947-950   2002年

  630. Characterization of local structures around In atoms in Ga1-xInxN layers by fluorescence EXAFS measurements 査読有り

    Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I

    J. Crystal Growth   237-239 巻 ( 0 ) 頁： 1139-1142   2002年

  631. Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers 査読有り

    Tabuchi M, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I

    J. Crystal Growth   237-239 巻 ( 0 ) 頁： 1133-1138   2002年

  632. Electric fields in polarized GaInN/GaN heterostructures 査読有り

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    Optoelectronic Properties of Semiconductors and Superlattices   14 巻 ( 0 ) 頁： 219-258   2002年

  633. Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy 査読有り

    Yukawa Y, Nakamura T, Kosaki M, Watanabe Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H

    Institute of Physics Conference Series   170 巻 ( 0 ) 頁： 713-718   2002年

  634. Low-dislocation-density AlxGa1-xN single crystals grown on grooved substrates 査読有り

    Sano Shigekazu, Detchprohm Theeradetch, Yano Masahiro, Nakamura Ryo, Mochizuki Shingo, Amano Hiroshi, Akasaki Isamu

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   93 巻 ( 0 ) 頁： 197-201   2002年

  635. In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology 査読有り

    Nitta Shugo, Yukawa Yohei, Watanabe Yasuhiro, Kosaki Masayoshi, Iwaya Motoaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   93 巻 ( 0 ) 頁： 139-142   2002年

  636. Optical characterization of III-nitrides 査読有り

    Monemar B, Paskov P P, Paskova T, Bergman J P, Pozina G, Chen W M, Hai P N, Buyanova I A, Amano H, Akasaki I

    Materials Science & Engineering B: Solid-State Materials for Advanced Technology   93 巻 ( 0 ) 頁： 112-122   2002年

  637. Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN 査読有り

    Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Murakami Masanori, Kamiyama S, Amano H, Akasaki I

    J. Apl. Phys.   92 巻 ( 0 ) 頁： 3657-3661   2002年

  638. Atomic arrangement at the AlN/ZrB2 interface 査読有り

    Liu R, Bell A, Ponce F A, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   81 巻 ( 0 ) 頁： 3182-3184   2002年

  639. Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi Shigeo, Iwamura Yasuo, Watanabe Yasuhiro, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   80 巻 ( 0 ) 頁： 802-804   2002年

  640. Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates 査読有り

    Riemann T, Christen J, Kaschner A, Laades A, Hoffmann A, Thomsen C, Iwaya M, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   80 巻 ( 0 ) 頁： 3093-3095   2002年

  641. Effect of n-type modulation doping on the photoluminescence of GaN/Al0 査読有り

    Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Appl. Phys. Lett.   80 巻 ( 0 ) 頁： 1373-1375   2002年

  642. Optical absorption in polarized Ga1-xInxN/GaN quantum wells 査読有り

    Wetzel Christian, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   41 巻 ( 0 ) 頁： 11-14   2002年

  643. Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells 査読有り

    Wetzel C, Nelson J, Kamiyama S, Amano H, Akasaki I

    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures   20 巻 ( 0 ) 頁： 216-218   2002年

  644. Critical issues in AlxGa1-xN growth 査読有り

    Amano Hiroshi, Akasaki Isamu

    Optical Materials Amsterdam Netherlands   19 巻 ( 0 ) 頁： 219-222   2002年

  645. High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi S, Iwamura Y, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I

    Institute of Physics Conference Series   170 巻 ( 0 ) 頁： 813-817   2002年

  646. Reduction of threading dislocation density in AlxGa1-xN grown on periodically grooved substrates 査読有り

    Mochizuki Shingo, Detchprohm Theeradetch, Sano Shigekazu, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   237-239 巻 ( 0 ) 頁： 1065-1069   2002年

  647. Low-dislocation-density GaN and AlxGa1-xN (x? 013) grown on grooved substrates 査読有り

    Sano Shigekazu, Detchprohm Theeradetch, Mochizuki Shingo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   235 巻 ( 0 ) 頁： 129-134   2002年

  648. Migration of dislocations in strained GaN heteroepitaxial layers 査読有り

    Sahonta S-L, Baines M Q, Cherns D, Amano H, Ponce F A

    Physica Status Solidi B: Basic Research   234 巻 ( 0 ) 頁： 952-955   2002年

  649. Mg incorporation in AlGaN layers grown on grooved sapphire substrates 査読有り

    Cherns D, Baines M Q, Wang Y Q, Liu R, Ponce F A, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   234 巻 ( 0 ) 頁： 850-854   2002年

  650. Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells 査読有り

    Paskov P P, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   234 巻 ( 0 ) 頁： 755-758   2002年

  651. Mass transport of AlxGa1-xN 査読有り

    Nitta S, Yukawa Y, Watanabe Y, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   194 巻 ( 0 ) 頁： 485-488   2002年

  652. High-efficiency UV light-emitting diode 査読有り

    Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   194 巻 ( 0 ) 頁： 393-398   2002年

  653. Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   192 巻 ( 0 ) 頁： 453-455   2002年

  654. Annihilation of threading dislocations in GaN/AlGaN 査読有り

    Kuwano N, Tsuruda T, Adachi Y, Terao S, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   192 巻 ( 0 ) 頁： 366-370   2002年

  655. UV light-emitting diode fabricated on hetero-ELO-grown Al022Ga078N with low dislocation density 査読有り

    Kamiyama S, Iwaya M, Takanami S, Terao S, Miyazaki A, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   192 巻 ( 0 ) 頁： 296-300   2002年

  656. Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures 査読有り

    Monemar B, Paskov P P, Pozina G, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   192 巻 ( 0 ) 頁： 21-26   2002年

  657. Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells 査読有り

    Monemar B, Paskov P P, Bergman J P, Pozina G, Paskova T, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   190 巻 ( 0 ) 頁： 161-166   2002年

  658. Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates 査読有り

    Pozina G, Bergman J P, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   190 巻 ( 0 ) 頁： 107-111   2002年

  659. Novel aspects of the growth of nitrides by MOVPE 査読有り

    Amano H, Akasaki I

    Journal of Physics: Condensed Matter   13 巻 ( 0 ) 頁： 6935-6944   2001年

  660. Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport 査読有り

    Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I

    Materials Science Forum   353-356 巻 ( 0 ) 頁： 791-794   2001年

  661. Compensation mechanism in MOCVD and MBE grown GaN:Mg 査読有り

    Alves H, Bohm M, Hofstaetter A, Amano H, Einfeldt S, Hommel D, Hofmann D M, Meyer B K

    Physica B: Condensed Matter AmsterdamNetherlands   308-310 巻 ( 0 ) 頁： 38-41   2001年

  662. DX-like behavior of oxygen in GaN 査読有り

    Wetzel C, Amano H, Akasaki I, Ager J W, Grzegory I, Meyer B K

    Physica B: Condensed Matter AmsterdamNetherlands   302&303 巻 ( 0 ) 頁： 23-38   2001年

  663. Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport 査読有り

    Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I

    J. Crystal Growth   230 巻 ( 0 ) 頁： 473-476   2001年

  664. Near K-edge absorption spectra of III-V nitrides 査読有り

    Fukui K, Hirai R, Yamamoto A, Hirayama H, Aoyagi Y, Yamaguchi S, Amano H, Akasaki I, Tanaka S

    Physica Status Solidi B: Basic Research   228 巻 ( 0 ) 頁： 461-465   2001年

  665. Optical characterization of InGaN/GaN MQW structures without in phase separation 査読有り

    Monemar B, Paskov P P, Pozina G, Paskova T, Bergman J P, Iwaya M, Nitta S, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   228 巻 ( 0 ) 頁： 157-160   2001年

  666. Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure 査読有り

    Kamiyama S, Iwaya M, Hayashi N, Takeuchi T, Amano H, Akasaki I, Watanabe S, Kaneko Y, Yamada N

    J. Crystal Growth   223 巻 ( 0 ) 頁： 83-91   2001年

  667. Crystal growth of high-quality AlInN/GaN superlattices and of crack-free AlN on GaN: their possibility of high electron mobility transistor 査読有り

    Yamaguchi S, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   188 巻 ( 0 ) 頁： 895-898   2001年

  668. Growth mechanism and characterization of low-dislocation-density AlGaN single crystals grown on periodically grooved substrates 査読有り

    Detchprohm T, Sano S, Mochizuki S, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   188 巻 ( 0 ) 頁： 799-802   2001年

  669. Demonstration of flame detection in room light background by solar-blind AlGaN PIN photodiode 査読有り

    Hirano A, Pernot C, Iwaya M, Detchprohm T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   188 巻 ( 0 ) 頁： 293-296   2001年

  670. High-efficiency GaN/AlxGa1-xN multi-quantum-well light emitter grown on low-dislocation density AlxGa1-xN 査読有り

    Iwaya M, Terao S, Sano T, Takanami S, Ukai T, Nakamura R, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   188 巻 ( 0 ) 頁： 117-120   2001年

  671. Absorption spectroscopy and band structure in polarized GaN/AlxGa1-xN quantum wells 査読有り

    Wetzel C, Kasumi M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   183 巻 ( 0 ) 頁： 51-60   2001年

  672. Control of strain in GaN by a combination of H2 and N2 carrier gases 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    J. Apl. Phys.   89 巻 ( 0 ) 頁： 7820-7824   2001年

  673. Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant 査読有り

    Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   82 巻 ( 0 ) 頁： 137-139   2001年

  674. Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices 査読有り

    Yamaguchi Shigeo, Kosaki Masayoshi, Watanabe Yasuyukihiro, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   79 巻 ( 0 ) 頁： 3062-3064   2001年

  675. Control of strain in GaN using an In doping-induced hardening effect 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Kashima Takayuki, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Amano Hiroshi, Akasaki Isamu

    Physical Review B: Condensed Matter and Materials Physics   64 巻 ( 0 ) 頁： 035318/1-035318/5   2001年

  676. Photoresponse and defect levels of AlGaN/GaN heterobipolar phototransistor grown on low-temperature AlN interlayer 査読有り

    Mouillet Robert, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   40 巻 ( 0 ) 頁： L498-L501   2001年

  677. Metalorganic vapor phase epitaxial growth of high-quality (Al,In)N/(Al,Ga)N multiple layers on GaN 査読有り

    Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   40 巻 ( 0 ) 頁： L420-L422   2001年

  678. Fracture of AlxGa1-xN/GaN heterostructure Compositional and impurity dependence 査読有り

    Terao Shinji, Iwaya Motoaki, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   40 巻 ( 0 ) 頁： L195-L197   2001年

  679. Heteroepitaxial lateral overgrowth of GaN on periodically grooved substrates: a new approach for growing low-dislocation-density GaN single crystals 査読有り

    Detchprohm Theeradetch, Yano Masahiro, Sano Shigekazu, Nakamura Ryo, Mochiduki Shingo, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   40 巻 ( 0 ) 頁： L16-L19   2001年

  680. Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride 査読有り

    Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Kiroyuki

    Jpn. J. Appl. Phys. Part : Letters   40 巻 ( 0 ) 頁： L1280-L1282   2001年

  681. Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers 査読有り

    Chow W W, Amano H

    IEEE Journal of Quantum Electronics   37 巻 ( 0 ) 頁： 265-273   2001年

  682. Mass transport of GaN and reduction of threading dislocations 査読有り

    Nitta S, Kashima T, Nakamura R, Iwaya M, Amano H, Akasaki I

    Surface Review and Letters   7 巻 ( 0 ) 頁： 561-564   2000年

  683. Electrical conductivity of low-temperature-deposited Al01Ga09N interlayer 査読有り

    Hayashi Nobuaki, Kamiyama Satoshi, Takeuchi Tetsuya, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu, Watanabe Satoshi, Kaneko Yawara, Yamada Norihide

    Jpn. J. Appl. Phys.   39 巻 ( 0 ) 頁： 6493-6495   2000年

  684. Radiative recombination in (In,Ga)N/GaN multiple quantum wells 査読有り

    Bergman J P, Monemar B, Pozina G, Sernelius B E, Holtz P O, Amano H, Akasaki I

    Materials Science Forum   338-342 巻 ( 0 ) 頁： 1571-1574   2000年

  685. Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method 査読有り

    Tabuchi M, Hirayama K, Takeda Y, Takeuchi T, Amano H, Akasaki I

    Applied Surface Science   159-160 巻 ( 0 ) 頁： 432-440   2000年

  686. Mass transport and the reduction of threading dislocation in GaN 査読有り

    Nitta S, Kariya M, Kashima T, Yamaguchi S, Amano H, Akasaki I

    Applied Surface Science   159-160 巻 ( 0 ) 頁： 421-426   2000年

  687. Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy 査読有り

    Yamaguchi S, Kariya M, Nitta S, Amano H, Akasaki I

    Applied Surface Science   159-160 巻 ( 0 ) 頁： 414-420   2000年

  688. Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer 査読有り

    Iwaya M, Terao S, Hayashi N, Kashima T, Amano H, Akasaki I

    Applied Surface Science   159-160 巻 ( 0 ) 頁： 405-413   2000年

  689. Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas 査読有り

    Yamaguchi S, Kariya M, Nitta S, Kashima T, Kosaki M, Yukawa Y, Amano H, Akasaki I

    J. Crystal Growth   221 巻 ( 0 ) 頁： 327-333   2000年

  690. Structural characterization of Al1-xInxN lattice-matched to GaN 査読有り

    Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kashima Takayuki, Kato Hisaki, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   209 巻 ( 0 ) 頁： 419-423   2000年

  691. Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells 査読有り

    Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers   39 巻 ( 0 ) 頁： 413-416   2000年

  692. Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GaInN active layer 査読有り

    Kamiyama Satoshi, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers   39 巻 ( 0 ) 頁： 390-392   2000年

  693. Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design 査読有り

    Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   39 巻 ( 0 ) 頁： 2425-2427   2000年

  694. The effect of isoelectronic In-doping on the structural and optical properties of (Al)GaN grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   39 巻 ( 0 ) 頁： 2385-2388   2000年

  695. Gain-switching of GaInN multiquantum well laser diodes 査読有り

    Marinelli C, Khrushchev I Y, Rorison J M, Penty R V, White I H, Kaneko Y, Watanabe S, Yamada N, Takeuchi T, Amano H, Akasaki I, Hasnain G, Schneider R, Wang S-Y, Tan M R T

    Electronics Letters   36 巻 ( 0 ) 頁： 83-84   2000年

  696. Nitride-based laser diodes using thick n-AlGaN layers 査読有り

    Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y W, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Y S, Yamada N

    Journal of Electronic Materials   29 巻 ( 0 ) 頁： 302-305   2000年

  697. Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices 査読有り

    Wetzel C, Detchprohm T, Takeuchi T, Amano H, Akasaki I

    Journal of Electronic Materials   29 巻 ( 0 ) 頁： 252-255   2000年

  698. Characterization of initial growth stage of GaInN multilayered structure by X-ray CTR scattering and X-ray reflectivity method 査読有り

    Tabuchi Masao, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu

    Hyomen Kagaku   21 巻 ( 0 ) 頁： 162-168   2000年

  699. Effect of low-temperature deposited layer on the growth of Group III nitrides on sapphire 査読有り

    Amano Hiroshi, Akasaki Isamu

    Hyomen Kagaku   21 巻 ( 0 ) 頁： 126-133   2000年

  700. Effect on GaN/Al017Ga083N and Al005Ga095N/Al017Ga083N quantum wells by isoelectronic in-doping during metalorganic vapor phase epitaxy 査読有り

    Kariya Michihiko, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   39 巻 ( 0 ) 頁： L143-L145   2000年

  701. Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure 査読有り

    Wetzel C, Amano H, Akasaki I, Ager J W III, Grzegory I, Topf M, Meyer B K

    Physical Review B: Condensed Matter and Materials Physics   61 巻 ( 0 ) 頁： 8202-8206   2000年

  702. Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1-xInxN/GaN quantum-well structures 査読有り

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   61 巻 ( 0 ) 頁： 2159-2163   2000年

  703. Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes 査読有り

    Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   39 巻 ( 0 ) 頁： L387-L389   2000年

  704. Magneto-optical studies of the 088-eV photoluminescence emission in electron-irradiated GaN 査読有り

    Wagner Mt, Buyanova I A, Thinh N Q, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   62 巻 ( 0 ) 頁： 16572-16577   2000年

  705. Improvement of structural and optical properties of GaN and AlGaN using isoelectronic In doping 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Institute of Physics Conference Series   166 巻 ( 0 ) 頁： 471-474   2000年

  706. Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells 査読有り

    Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I

    J. Apl. Phys.   88 巻 ( 0 ) 頁： 2677-2681   2000年

  707. Multiple peak spectra from InGaN/GaN multiple quantum wells 査読有り

    Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   80 巻 ( 0 ) 頁： 85-89   2000年

  708. InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport 査読有り

    Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I

    Appl. Phys. Lett.   77 巻 ( 0 ) 頁： 1638-1640   2000年

  709. Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   76 巻 ( 0 ) 頁： 876-878   2000年

  710. Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant 査読有り

    Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I

    Appl. Phys. Lett.   76 巻 ( 0 ) 頁： 3388-3390   2000年

  711. Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers 査読有り

    Chow W W, Amano H, Akasaki I

    Appl. Phys. Lett.   76 巻 ( 0 ) 頁： 1647-1649   2000年

  712. Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain 査読有り

    Shapiro N A, Kim Y, Feick H, Weber E R, Perlin P, Yang J W, Akasaki I, Amano H

    Physical Review B: Condensed Matter and Materials Physics   62 巻 ( 0 ) 頁： R16318-R16321   2000年

  713. Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells 査読有り

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   62 巻 ( 0 ) 頁： R13302-R13305   2000年

  714. Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study 査読有り

    Hai P N, Chen W M, Buyanova I A, Monemar B, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   62 巻 ( 0 ) 頁： R10607-R10609   2000年

  715. Fabrication and characterization of GaN-based laser diode grown on thick n-AlGaN contact layer 査読有り

    Takeuchi T, Detchprohm T, Yano M, Yamaguchi M, Hayashi N, Iwaya M, Isomura K, Kimura K, Amano H, Akasaki I, Kaneko Y, Watanabe S, Yamaoka Y, Shioda R, Hidaka T, Kaneko Y, Yamada N

    Physica Status Solidi A: Applied Research   176 巻 ( 0 ) 頁： 31-34   1999年

  716. Spectral study of photoluminescence from GaInN/GaN MQWs using CW and time-resolved measurements 査読有り

    Watanabe S, Yamada N, Yamada Y, Taguchi T, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   216 巻 ( 0 ) 頁： 335-339   1999年

  717. Photoluminescence investigations of AlGaN on GaN epitaxial films 査読有り

    Meyer Bruno K, Steude G, Goldner A, Hoffmann A, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   216 巻 ( 0 ) 頁： 187-191   1999年

  718. X-ray interference and crystal truncation rod observation of GaN and GaInN layers grown on sapphire with AlN buffer layer 査読有り

    Tabuchi Masao, Takeda Yoshikazu, Matsumoto Nobuhiro, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers   38 巻 ( 0 ) 頁： 281-284   1999年

  719. Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    J. Apl. Phys.   85 巻 ( 0 ) 頁： 7682-7688   1999年

  720. Piezoelectric Franz-Keldysh effect in strained (Ga,In)N/GaN heterostructures 査読有り

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    J. Apl. Phys.   85 巻 ( 0 ) 頁： 3786-3791   1999年

  721. Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   75 巻 ( 0 ) 頁： 4106-4108   1999年

  722. Improvement of far-field pattern in nitride laser diodes 査読有り

    Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Amano H, Akasaki I, Kaneko Yw, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Ys, Yamada N

    Appl. Phys. Lett.   75 巻 ( 0 ) 頁： 2960-2962   1999年

  723. Quantum-well width dependence of threshold current density in InGaN lasers 査読有り Open Access

    Chow W W, Amano H, Takeuchi T, Han J

    Appl. Phys. Lett.   75 巻 ( 0 ) 頁： 244-246   1999年

  724. Stress evolution during metalorganic chemical vapor deposition of GaN 査読有り

    Hearne S, Chason E, Han J, Floro J A, Figiel J, Hunter J, Amano H, Tsong I S T

    Appl. Phys. Lett.   74 巻 ( 0 ) 頁： 356-358   1999年

  725. Optical properties of doped InGaN/GaN multiquantum-well structures 査読有り

    Dalfors J, Bergman J P, Holtz P O, Sernelius B E, Monemar B, Amano H, Akasaki I

    Appl. Phys. Lett.   74 巻 ( 0 ) 頁： 3299-3301   1999年

  726. Optical investigations of AlGaN on GaN epitaxial films 査読有り

    Steude G, Meyer B K, Goldner A, Hoffmann A, Bertram F, Christen J, Amano H, Akasaki I

    Appl. Phys. Lett.   74 巻 ( 0 ) 頁： 2456-2458   1999年

  727. Electronic structure of the 088-eV luminescence center in electron-irradiated gallium nitride 査読有り

    Buyanova I A, Wagner Mt, Chen W M, Edwards N V, Monemar B, Lindstrom J L, Bremser M D, Davis R F, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   60 巻 ( 0 ) 頁： 1746-1751   1999年

  728. Cooling dynamics of excitons in GaN 査読有り

    Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   59 巻 ( 0 ) 頁： R7797-R7800   1999年

  729. GaN-based laser diode with focused ion beam-etched mirrors 査読有り

    Ambe C, Takeuchi T, Katoh H, Isomura K, Satoh T, Mizumoto R, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y, Yamada N

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   59 巻 ( 0 ) 頁： 382-385   1999年

  730. Mosaic structure of ternary Al1-xInxN films on GaN grown by metalorganic vapor phase epitaxy 査読有り

    Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   38 巻 ( 0 ) 頁： L984-L986   1999年

  731. Strain modification of GaN in AlGaN/GaN epitaxial films 査読有り

    Steude Guido, Meyer Bruno K, Goldner Axel, Hoffmann Axel, Kaschner Axel, Bechstedt Friedhelm, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   38 巻 ( 0 ) 頁： L498-L500   1999年

  732. Low-intensity ultraviolet photodetectors based on AlGaN 査読有り

    Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   38 巻 ( 0 ) 頁： L487-L489   1999年

  733. Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures 査読有り

    Wetzel Christian, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   38 巻 ( 0 ) 頁： L163-L165   1999年

  734. Microscopic investigation of Al043Ga057N on sapphire 査読有り

    Kashima Takayuki, Nakamura Ryo, Iwaya Motoaki, Katoh Hisaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Letters   38 巻 ( 0 ) 頁： L1515-L1518   1999年

  735. Optical transitions of the Mg acceptor in GaN 査読有り

    Hofmann Detlev M, Meyer Bruno K, Leiter Frank, von Forster Walter, Alves Helder, Romanov Nikolai, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers   38 巻 ( 0 ) 頁： L1422-L1424   1999年

  736. Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy 査読有り

    Watanabe Atsushi, Takahashi Hirokazu, Tanaka Toshiyuki, Ota Hiroyuki, Chikuma Kiyofumi, Amano Hiroshi, Kashima Takayuki, Nakamura Ryo, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   38 巻 ( 0 ) 頁： L1159-L1162   1999年

  737. GaN-based MQW light emitting diodes 査読有り

    Kato H, Koide N, Hirano A, Koike M, Amano H, Akasaki I

    Institute of Physics Conference Series   162 巻 ( 0 ) 頁： 31-35   1999年

  738. Correlation of vibrational modes and DX-like centers in GaN:O 査読有り

    Wetzel C, Ager J W III, Topf M, Meyer B K, Amano H, Akasaki I

    Physica B: Condensed Matter Amsterdam   273-274 巻 ( 0 ) 頁： 109-112   1999年

  739. Mg acceptors in GaN Dependence of the g-anisotropy on the doping concentration 査読有り

    Hofmann Detlev M, Burkhardt Wolfgang, Leiter Frank, Von Forster Walter, Alves Helder, Hofstaetter Albrecht, Meyer Bruno K, Romanov Nikolai G, Amano Hiroshi, Akasaki Isamu

    Physica B: Condensed Matter Amsterdam   273-274 巻 ( 0 ) 頁： 43-45   1999年

  740. Energy loss rate of excitons in GaN 査読有り

    Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I

    Physica B: Condensed Matter Amsterdam   272 巻 ( 0 ) 頁： 409-411   1999年

  741. Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer 査読有り

    Amano H, Iwaya M, Hayashi N, Kashima T, Nitta S, Wetzel C, Akasaki I

    Physica Status Solidi B: Basic Research   216 巻 ( 0 ) 頁： 683-689   1999年

  742. Discrete Stark-like ladder in piezoelectric GaInN/GaN quantum wells 査読有り

    Wetzel C, Kasumi M, Detchprohm T, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   216 巻 ( 0 ) 頁： 399-403   1999年

  743. Improvement of low-intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density 査読有り

    Pernot Cyril, Hirano A, Iwaya M, Detchprohm T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   176 巻 ( 0 ) 頁： 147-151   1999年

  744. Study on electroluminescence spectrum and waveguide loss of GaInN multiple quantum well lasers 査読有り

    Kaneko Y, Shioda R, Yamada N, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   176 巻 ( 0 ) 頁： 137-140   1999年

  745. TEM/HREM characterization of structural defects in GaN epitaxial layers grown on sapphire 査読有り

    Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I

    Electron Microscopy   2 巻 ( 0 ) 頁： 693-694   1998年

  746. Weakly localized transport in modulation-doped GaN/AlGaN heterostructures 査読有り

    Buyanov A V, Sandberg J A, Sernelius B E, Holtz P O, Bergman J P, Monemar B, Amano H, Akasaki I

    J. Crystal Growth   189/190 巻 ( 0 ) 頁： 758-762   1998年

  747. Room-temperature photoluminescence linewidth versus material quality of GaN 査読有り

    Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I

    Materials Science Forum   264-268 巻 ( 0 ) 頁： 1319-1322   1998年

  748. Heteroepitaxy of group III nitrides for device applications 査読有り

    Amano H, Takeuchi T, Sakai H, Yamaguchi S, Wetzel C, Akasaki I

    Materials Science Forum   264-268 巻 ( 0 ) 頁： 1115-1120   1998年

  749. Valence band splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures 査読有り

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    J. Crystal Growth   189/190 巻 ( 0 ) 頁： 621-624   1998年

  750. Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures 査読有り

    Sakai Hiromitsu, Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   189/190 巻 ( 0 ) 頁： 831-836   1998年

  751. Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures 査読有り

    Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Dalfors J, Monemar B, Amano H, Akasaki I

    J. Crystal Growth   189/190 巻 ( 0 ) 頁： 753-757   1998年

  752. Thermal ionization energy of Si and Mg in (Al,Ga)N 査読有り

    Katsuragawa Maki, Sota Shigetoshi, Komori Miho, Anbe Chitoshi, Takeuchi Tetsuya, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   189/190 巻 ( 0 ) 頁： 528-531   1998年

  753. Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering 査読有り

    Tabuchi Masao, Matsumoto Nobuhiro, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   189/190 巻 ( 0 ) 頁： 291-294   1998年

  754. The dependence of the band gap on alloy composition in strained AlGaN on GaN 査読有り

    Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   205 巻 ( 0 ) 頁： R7-R8   1998年

  755. Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   195 巻 ( 0 ) 頁： 309-313   1998年

  756. The residual donor binding energy in AlGaN epitaxial layers 査読有り

    Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   165 巻 ( 0 ) 頁： R3-R4   1998年

  757. On the nature of radiative recombination processes in GaN 査読有り

    Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Institute of Physics Conference Series   156 巻 ( 0 ) 頁： 239-244   1998年

  758. Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN 査読有り

    Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I, Wysmolek A, Lomiak P, Baranowski J M, Pakula K, Stepniewski R, Korona K P, Grzegory I, Bockowski M, Porowski S

    Solid State Communications   105 巻 ( 0 ) 頁： 497-501   1998年

  759. Optical band gap in Ga1-xInxN (0<x<02) on GaN by photoreflection spectroscopy 査読有り

    Wetzel C, Takeuchi T, Yamaguchi S, Katoh H, Amano H, Akasaki I

    Appl. Phys. Lett.   73 巻 ( 0 ) 頁： 1994-1996   1998年

  760. Observation of photoluminescence from Al1-xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   73 巻 ( 0 ) 頁： 830-831   1998年

  761. Photoluminescence of GaN: Effect of electron irradiation 査読有り

    Buyanova I A, Wagner Mt, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I

    Appl. Phys. Lett.   73 巻 ( 0 ) 頁： 2968-2970   1998年

  762. Determination of piezoelectric fields in strained (Ga,In)N quantum wells using the quantum-confined Stark effect 査読有り

    Takeuchi Tetsuya, Wetzel Christian, Yamaguchi Shigeo, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Nakagawa Shigeru, Yamaoka Yoshifumi, Yamada Norihide

    Appl. Phys. Lett.   73 巻 ( 0 ) 頁： 1691-1693   1998年

  763. Pit formation in GaInN quantum wells 査読有り

    Chen Y, Takeuchi T, Amano H, Akasaki I, Yamada N, Kaneko Y, Wang S Y

    Appl. Phys. Lett.   72 巻 ( 0 ) 頁： 710-712   1998年

  764. Similarity between the 088-eV photoluminescence in GaN and the electron-capture emission of the OP donor in GaP 査読有り

    Chen W M, Buyanova I A, Wagner Mt, Monemar B, Lindstrom J L, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   58 巻 ( 0 ) 頁： R13351-R13354   1998年

  765. Influence of potential fluctuations on electrical transport and optical properties in modulation-doped GaN/Al028Ga072N heterostructures 査読有り

    Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Monemar B, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   58 巻 ( 0 ) 頁： 1442-1450   1998年

  766. Structural properties of Al1-xInxN ternary alloys on GaN grown by metalorganic vapor phase epitaxy 査読有り

    Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   37 巻 ( 0 ) 頁： L697-L699   1998年

  767. GaN based laser diode with focused ion beam etched mirrors 査読有り

    Katoh Hisaki, Takeuchi Tetsuya, Anbe Chitoshi, Mizumoto Ryuichi, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Yamada Norihide

    Jpn. J. Appl. Phys. Part : Letters   37 巻 ( 0 ) 頁： L444-L446   1998年

  768. Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN 査読有り

    Iwaya Motoaki, Takeuchi Tetsuya, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   37 巻 ( 0 ) 頁： L316-L318   1998年

  769. Investigation of the leakage current in GaN p-n junctions 査読有り

    Pernot Cyril, Hirano Akira, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   37 巻 ( 0 ) 頁： L1202-L1204   1998年

  770. Stress and defect control in GaN using low temperature interlayers 査読有り

    Amano Hiroshi, Iwaya Motoaki, Kashima Takayuki, Katsuragawa Maki, Akasaki Isamu, Han Jung, Hearne Sean, Floro Jerry A, Chason Eric, Figiel Jeffrey

    Jpn. J. Appl. Phys. Part : Letters   37 巻 ( 0 ) 頁： L1540-L1542   1998年

  771. Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters 査読有り Open Access

    Akasaki Isamu, Amano Hiroshi

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   36 巻 ( 0 ) 頁： 5393-5408   1997年

  772. Photoluminescence of exciton-polaritons in GaN 査読有り

    Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   50 巻 ( 0 ) 頁： 130-133   1997年

  773. Electron gas in modulation doped GaN/AlGaN structures 査読有り

    Bergman J P, Buyanov A, Lundstrom T, Monemar B, Amano H, Akasaki I

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   43 巻 ( 0 ) 頁： 207-210   1997年

  774. Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3 査読有り

    Merz C, Kunzer M, Santic B, Kaufmann U, Akasaki I, Amano H

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   43 巻 ( 0 ) 頁： 176-180   1997年

  775. Electronic structure and temperature dependence of excitons in GaN 査読有り

    Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   43 巻 ( 0 ) 頁： 172-175   1997年

  776. Melt-back etching of GaN 査読有り

    Kaneko Yawara, Yamada Norihide, Takeuchi Tetsuya, Yamaoka Yoshifumi, Amano Hiroshi, Akasaki Isamu

    Solid-State Electronics   41 巻 ( 0 ) 頁： 295-298   1997年

  777. Recessed gate GaN MODFETs 査読有り Open Access

    Burm Jinwook, Schaff William J, Martin Glenn H, Eastman Lester F, Amano Hiroshi, Akasaki Isamu

    Solid-State Electronics   41 巻 ( 0 ) 頁： 247-250   1997年

  778. The excitonic bandgap of GaN: dependence on substrate 査読有り

    Monemar B, Bergman J P, Buyanova I A, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N T

    Solid-State Electronics   41 巻 ( 0 ) 頁： 239-241   1997年

  779. Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance 査読有り

    Kunzer M, Baur J, Kaufmann U, Schneider J, Amano H, Akasaki I

    Solid-State Electronics   41 巻 ( 0 ) 頁： 189-193   1997年

  780. Optical characterization of GaN and related materials 査読有り

    Monemar B, Bergman J P, Lundstroem T, Harris C I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N

    Solid-State Electronics   41 巻 ( 0 ) 頁： 181-184   1997年

  781. Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells 査読有り

    Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Takeuchi Hideo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Letters   36 巻 ( 0 ) 頁： L382-L385   1997年

  782. Optical properties of strained AlGaN and GaInN on GaN 査読有り

    Takeuchi Tetsuya, Takeuchi Hideo, Sota Shigetoshi, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Letters   36 巻 ( 0 ) 頁： L177-L179   1997年

  783. Quantum beat spectroscopy on excitons in GaN 査読有り

    Zimmermann R, Hofmann M R, Euteneuer A, Mobius J, Weber D, Ruhle W W, Gobel E O, Meyer B K, Amano H, Akasaki I

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology-   50 巻 ( 0 ) 頁： 205-207   1997年

  784. Effects of buffer layers in heteroepitaxy of gallium nitride 査読有り

    Hiramatsu K, Detchprohm T, Amano H, Akasaki I

    Advances in the Understanding of Crystal Growth Mechanisms   ( 0 ) 頁： 399-413   1997年

  785. Progress and prospect of group-III nitride semiconductors 査読有り

    Akasaki Isamu, Amano Hiroshi

    J. Crystal Growth   175/176 巻 ( 0 ) 頁： 29-36   1997年

  786. Photoluminescence and optical gain in highly excited GaN 査読有り

    Eckey L, Holst J, Hoffmann A, Broser I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K

    Journal of Luminescence   72-74 巻 ( 0 ) 頁： 59-61   1997年

  787. Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well 査読有り

    Li Wei, Bergman Peder, Monemar Bo, Amano H, Akasaki I

    J. Apl. Phys.   81 巻 ( 0 ) 頁： 1005-1007   1997年

  788. Optical properties of tensile-strained wurtzite GaN epitaxial layers 査読有り

    Chichibu S, Azuhata T, Sota T, Amano H, Akasaki I

    Appl. Phys. Lett.   70 巻 ( 0 ) 頁： 2085-2087   1997年

  789. Transient four-wave-mixing spectroscopy on gallium nitride: Energy splittings of intrinsic excitonic resonances 査読有り

    Zimmermann R, Euteneuer A, Mobius J, Weber D, Hofmann M R, Ruhle W W, Gobel E O, Meyer B K, Amano H, Akasaki I

    Physical Review B: Condensed Matter   56 巻 ( 0 ) 頁： R12722-R12724   1997年

  790. N K-edge x-ray-absorption study of heteroepitaxial GaN films 査読有り

    Katsikini M, Paloura E C, Fieber-Erdmann M, Kalomiros J, Moustakas T D, Amano H, Akasaki I

    Physical Review B: Condensed Matter   56 巻 ( 0 ) 頁： 13380-13386   1997年

  791. Shortest wavelength semiconductor laser diode 査読有り

    Akasaki I, Sota S, Sakai H, Tanaka T, Koike M, Amano H

    Electronics Letters   32 巻 ( 0 ) 頁： 1105-1106   1996年

  792. Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers 査読有り

    Wetzel C, Haller E E, Amano H, Akasaki I

    Appl. Phys. Lett.   68 巻 ( 0 ) 頁： 2547/09/01   1996年

  793. Resonant Raman scattering in hexagonal GaN 査読有り

    Behr D, Wagner J, Schneider J, Amano H, Akasaki I

    Appl. Phys. Lett.   68 巻 ( 0 ) 頁： 2404/06/01   1996年

  794. High-quality (Ga,In)N/GaN multiple quantum wells 査読有り

    Koike M, Yamasaki S, Nagai S, Koide N, Asami S, Amano H, Akasaki I

    Appl. Phys. Lett.   68 巻 ( 0 ) 頁： 1403-5   1996年

  795. Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface 査読有り

    Siegle H, Thurian P, Eckey L, Hoffmann A, Thomsen C, Meyer B K, Amano H, Akasaki I, Detchprohm T, Hiramatsu K

    Appl. Phys. Lett.   68 巻 ( 0 ) 頁： 1265-6   1996年

  796. Free exciton emission in GaN 査読有り

    Kovalev D, Averboukh B, Volm D, Meyer B K, Amano H, Akaski I

    Physical Review B: Condensed Matter   54 巻 ( 0 ) 頁： 2518-2522   1996年

  797. Free and bound excitons in thin wurtzite GaN 査読有り

    Merz C, Kunzer M, Kaufmann U, Akasaki I, Amano H

    Materials Science & Engineering B: Solid-State Materials for Advanced Technology   43 巻 ( 0 ) 頁： 176-180   1996年

  798. 75Å GaN channel modulation doped field effect transistors 査読有り

    Burm Jinwook, Schaff William J, Eastman Lester F, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   68 巻 ( 0 ) 頁： 2849-2851   1996年

  799. Crystal growth of column-III nitride semiconductors and their electrical and optical properties 査読有り

    Akasaki I, Amano H

    J. Crystal Growth   163 巻 ( 0 ) 頁： 86-92   1996年

  800. Raman and photoluminescence imaging of the GaN/substrate interface 査読有り

    Siegle H, Thurian P, Eckey L, Hoffmann A, Thomsen C, Meyer B K, Detchprohm T, Hiramatsu K, Amano H, Akasaki I

    Institute of Physics Conference Series   149 巻 ( 0 ) 頁： 97-102   1996年

  801. Present and future of group III nitride semiconductors 査読有り

    Akasaki Isamu, Amano Hiroshi

    Institute of Physics Conference Series   145 巻 ( 0 ) 頁： 19-22   1996年

  802. Relaxation and recombination dynamics in GaN/Al2O3 epilayers 査読有り

    Eckey L, Heitz R, Hoffmann A, Broser I, Meyer B K, Hiramatsu K, Detchprohm T, Amano H, Akasaki I

    Institute of Physics Conference Series   142 巻 ( 0 ) 頁： 927-930   1996年

  803. Remote plasma hydrogenation of Mg-doped GaN 査読有り

    Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I

    Institute of Physics Conference Series   142 巻 ( 0 ) 頁： 1031-1034   1996年

  804. Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface 査読有り

    Bergman JP, Lundstroem T, Monemar B, Amano H, Akasaki I

    Institute of Physics Conference Series   142 巻 ( 0 ) 頁： 935-938   1996年

  805. Exciton dynamics in GaN 査読有り

    Bergman J P, Monemar B, Amano H, Akasaki I, Hiramatsu K, Sawaki N, Detchprohm T

    Institute of Physics Conference Series   142 巻 ( 0 ) 頁： 931-934   1996年

  806. Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode 査読有り

    Akasaki Isamu, Amano Hiroshi, Suemune ikuo

    Institute of Physics Conference Series   142 巻 ( 0 ) 頁： 2010/07/10   1996年

  807. Magneto-optical studies of GaN and GaN/AlxGa1-xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance 査読有り

    Wang Y J, Kaplan R, Ng H K, Doverspike K, Gaskill D K, Ikedo T, Akasaki I, Amono H

    J. Apl. Phys.   79 巻 ( 0 ) 頁： 8007-8010   1996年

  808. Effect of Si doping on the dislocation structure of GaN grown on a A-face of sapphire 査読有り

    Ruvimov Sergei, Liliental-Weber Zuzanna, Suski Tadesuz, Ager Joel W III, Washburn Jack, Krueger Joachim, Kisielowski Charistian, Weber Eicke R, Amano H, Akasaki I

    Appl. Phys. Lett.   69 巻 ( 0 ) 頁： 990-992   1996年

  809. Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface 査読有り

    Bergman J P, Lundstroem t, Monemar B, Amano H, Akasaki I

    Appl. Phys. Lett.   69 巻 ( 0 ) 頁： 3456-3458   1996年

  810. High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers 査読有り

    Li Wei, Bergman Peder, Ivanov Ivan, Ni Wei-Xin, Amano H, Akasa I

    Appl. Phys. Lett.   69 巻 ( 0 ) 頁： 3390-3392   1996年

  811. Intrinsic optical properties of GaN epilayers grown on SiC substrates: effect of the built-in strain 査読有り

    Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I

    Appl. Phys. Lett.   69 巻 ( 0 ) 頁： 1255-1257   1996年

  812. Determination of the conduction band electron effective mass in hexagonal GaN 査読有り

    M. Drechsler D. M. Hofmann, B. K. Meyer, T. Detchprohm, H. Amano and I. Akasaki

    Jpn. J. Appl. Phys.Part : Letters   34 巻 ( 0 ) 頁： L1178-L1179   1995年

  813. Characterization of residual transition metal ions in GaN and AlN 査読有り

    Baur J., Kaufmann U., Kunzer M., Schneider J., Amano H., Akasaki I., Detchprohm T., Hiramatsu K.

    Materials Science Forum   196-201 巻 ( 0 ) 頁： 20333   1995年

  814. Crystal growth of column III nitrides and their applications to short wavelength light emitters 査読有り

    Akasaki I, Amano H

    J. Crystal Growth   146 巻 ( 0 ) 頁： 455-61   1995年

  815. Magneto-optical investigation of the neutral donor bound exciton in GaN 査読有り

    Volm D, Streibl T, Meyer B K, Detchprohm T, Amano H, Akasaki I

    Solid State Communications   96 巻 ( 0 ) 頁： 53-56   1995年

  816. Exciton lifetimes in GaN and GaInN 査読有り

    Harris C I, Monemar B, Amano H, Akasaki I

    Appl. Phys. Lett.   67 巻 ( 0 ) 頁： 840-2   1995年

  817. Surface-mode stimulated emission from optically pumped GaInN at room temperature 査読有り

    Kim S T, Amano H, Akasaki I

    Appl. Phys. Lett.   67 巻 ( 0 ) 頁： 267-9   1995年

  818. Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition 査読有り

    Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I

    Appl. Phys. Lett.   67 巻 ( 0 ) 頁： 1966/08/01   1995年

  819. Photoluminescence of residual transition metal impurities in GaN 査読有り

    Baur J, Kaufmann U, Kunzer M, Schneider J, Amano H, Akasaki I, Detchprohm T, Hiramatsu K

    Appl. Phys. Lett.   67 巻 ( 0 ) 頁： 1140-2   1995年

  820. p-Type conduction in Mg-doped Ga091In009N grown by metalorganic vapor-phase epitaxy 査読有り

    Yamasaki S, Asami S, Shibata N, Koike M, Manabe K, Tanaka T, Amano H, Akasaki I

    Appl. Phys. Lett.   66 巻 ( 0 ) 頁： 1112-13   1995年

  821. Photoemission capacitance transient spectroscopy of n-type GaN 査読有り

    Gotz W, Johnson N M, Street R A, Amano H, Akasaki I

    Appl. Phys. Lett.   66 巻 ( 0 ) 頁： 1340-2   1995年

  822. Properties of the yellow luminescence in undoped GaN epitaxial layers 査読有り

    . Hofmann D. M., Kovalev D., Steude G., Meyer B. K., Hoffmann A., Eckey L., Heitz R., Detchprom T., Amano H., Akasaki I.

    Physical Review B: Condensed Matter   52 巻 ( 0 ) 頁： 16702-6   1995年

  823. Exciton dynamics in GaN 査読有り

    . Bergman J.P., Monemar B., Amano H., Akasaki I.

    Lietuvos Fizikos Zurnalas   35 巻 ( 0 ) 頁： 569-574   1995年

  824. GaN/GaInN/GaN double heterostructure light emitting diode fabricated using plasma-assisted molecular beam epitaxy 査読有り

    Sakai Hiromitsu, Koide Takashi, Suzuki Hiroyuki, Yamaguchi Machiko, Yamasaki Shiro, Koike Masayoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Letters   34 巻 ( 0 ) 頁： L1429-L1431   1995年

  825. Direct patterning of the current confinement structure for p-type Column-III nitrides by low-energy electron beam irradiation treatment 査読有り

    Inamori Masahiko, Sakai Hiromitsu, Tanaka Toshiyuki, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   34 巻 ( 0 ) 頁： 1190-3   1995年

  826. Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device 査読有り

    I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka and M. Koike

    Jpn. J. Appl. Phys.   34 巻 ( 0 ) 頁： L1517-L1519   1995年

  827. Polarization of light from an optically pumped (Al-Ga-N)/(Ga-In-N) double heterostructure 査読有り

    S. T. Kim, T. Tanaka, H. Amano and I. Akasaki

    Mater. Sci. & Eng. B   26 巻 ( 0 ) 頁： L5-L7   1994年

  828. Iron acceptors in gallium nitride (GaN) 査読有り

    K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, B. Monemar, I. Akasaki and H. Amano.

    Materials Science Forum   143-147 巻 ( 0 ) 頁： 1993/08/01   1994年

  829. ODMR studies of MOVPE-grown GaN epitaxial layers 査読有り

    M. Kunzer, U. Kaufmann, K. Maier, J. Schneider, N. Herres, I. Akasaki and H. Amano.

    Materials Science Forum   143-147 巻 ( 0 ) 頁： 87-92   1994年

  830. Widegap column-III nitride semiconductors for UV/blue light emitting devices 査読有り

    I. Akasaki and H. Amano.

    Journal of the Electrochemical Society   141 巻 ( 0 ) 頁： 2266-71   1994年

  831. Perspective of UV/blue light emitting devices based on column-III nitrides 査読有り

    I. Akasaki and H. Amano.

    Institute of Physics Conference Series   136 巻 ( 0 ) 頁： 249-56   1994年

  832. p-Type conduction in Mg-doped GaN and Al008Ga092N grown by metalorganic vapor phase epitaxy 査読有り

    T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, and M. Koike

    Appl. Phys. Lett.   65 巻 ( 0 ) 頁： 593-4   1994年

  833. Deep level defects in n-type GaN 査読有り

    W. Goetz, N. M. Johnson, H. Amano and I. Akasaki

    Appl. Phys. Lett.   65 巻 ( 0 ) 頁： 463-5   1994年

  834. Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers 査読有り

    J. Baur, K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, H. Amano, I. Akasaki, T. Detchprohm and K. Hiramatsu

    Appl. Phys. Lett.   64 巻 ( 0 ) 頁： 857-9   1994年

  835. Optical gain of optically pumped Al01Ga09N/GaN double heterostructure at room temperature 査読有り

    S. T. Kim, H. Amano, I. Akasaki and N. Koide

    Appl. Phys. Lett.   64 巻 ( 0 ) 頁： 1535-6   1994年

  836. Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure 査読有り

    H. Amano, T. Tanaka Y. Kunii, K. Kato S. T. Kim and I. Akasaki

    Appl. Phys. Lett.   64 巻 ( 0 ) 頁： 1377-9   1994年

  837. Room-temperature low-threshold surface-stimulated emission by optical pumping from aluminum gallium nitride/gallium nitride (Al01Ga09N/GaN) double heterostructure 査読有り

    H. Amano, N. Watanabe, N. Koide and I. Akasaki.

    Jpn. J. Appl. Phys.   32 巻 ( 0 ) 頁： L1000-L1002   1993年

  838. Conductivity control of gallium nitride and fabrication of UV/blue GaN light emitting devices 査読有り

    I. Akasaki, H. Amano, N. Koide M. Kotaki Mand K. Manabe

    Phys. B   185 巻 ( 0 ) 頁： 428-32   1993年

  839. Electric properties of zinc-doped gallium nitride-type light emitting diode 査読有り

    M. R. H. Khan, I. Akasaki, H. Amano, N. Okazaki and K. Manabe

    Phys. B   185 巻 ( 0 ) 頁： 480-4   1993年

  840. GaN-based UV/blue light emitting devices 査読有り

    I. Akasaki, H. Amano, K. Itoh, N. Koide and K. Manabe

    Inst. Phys. Conf. Ser.   129 巻 ( 0 ) 頁： 851-6   1993年

  841. The growth of single crystalline gallium nitride on a silicon substrate using aluminum nitride as an intermediate layer 査読有り

    A. Watanabe, T. Takeuchi K. Hirosawa, H. Amano, K. Hiramatsu and I. Akasaki

    J. Crystal Growth   128 巻 ( 0 ) 頁： 391-6   1993年

  842. The growth of thick gallium nitride film on sapphire substrate by using zinc oxide buffer layer 査読有り

    T. Detchprohm, H. Amano, K. Hiramatsu and I. Akasaki

    J. Crystal Growth   128 巻 ( 0 ) 頁： 384-390   1993年

  843. Growth of gallium nitride and aluminum gallium nitride for UV/blue p-n junction diodes 査読有り

    I. Akasaki, H. Amano, H. Murakami, M. Sassa H. Kato and K. Manabe

    J. Crystal Growth   128 巻 ( 0 ) 頁： 379-383   1993年

  844. Radiative energy transfer in magnesium-doped gallium nitride/chromium(3+)-doped alumina (GaN:Mg/Al2O3:Cr3+) epitaxial systems 査読有り

    K. Maier, J. Schneider, I. Akasaki and H. Amano.

    Jpn. J. Appl. Phys.   32 巻 ( 0 ) 頁： L846-L848   1993年

  845. Perspective of the UV/blue light emitting devices based on gallium nitride and related compounds 査読有り

    Akasaki Isamu, Amano Hiroshi.

    Optoelec. -Devices and Technol.   7 巻 ( 0 ) 頁： 49-56   1992年

  846. Hydride vapor phase epitaxial growth of a high quality gallium nitride film using a zinc oxide buffer layer 査読有り

    Detchprohm T., Hiramatsu K., Amano H., Akasaki I.

    Appl. Phys. Lett.   61 巻 ( 0 ) 頁： 2688-2690   1992年

  847. Cathodoluminescence properties of undoped and zinc-doped aluminum gallium nitride grown by metalorganic vapor phase epitaxy 査読有り

    Itoh Kenji, Amano Hiroshi, Hiramatsu Kazumasa, Akasaki Isamu.

    Jpn. J. Appl. Phys.   30 巻 ( 0 ) 頁： 1604-1608   1991年

  848. Stimulated emission in MOVPE-grown gallium nitride (GaN) film 査読有り

    Amano Hiroshi, Asahi Tsunemori, Kito Masahiro, Akasaki Isamu.

    J. Lumin.   48-49 巻 ( 0 ) 頁： 889-892   1991年

  849. Photoluminescence of magnesium-doped p-type gallium nitride (GaN) and electroluminescence of gallium nitride (GaN) p-n junction LED 査読有り

    Akasaki Isamu, Amano Hiroshi, Kito Masahiro, Hiramatsu Kazumasa.

    J. Lumin.   48-49 巻 ( 0 ) 頁： 666-670   1991年

  850. Growth and properties of single crystalline gallium nitride films by hydride vapor phase epitaxy 査読有り

    Akasaki I., Naniwae K., Itoh K., Amano H., Hiramatsu K.

    Crystal Properties and Preparation   32-34 巻 ( 0 ) 頁： 154-157   1991年

  851. Growth of silicon-doped aluminum gallium nitride on (0001) sapphire substrate by metalorganic vapor phase epitaxy 査読有り

    Murakami Hiroshi, Asahi Tsunemori, Amano Hiroshi, Hiramatsu Kazumasa, Sawaki Nobuhiko, Akasaki Isamu.

    J. Crystal Growth   115 巻 ( 0 ) 頁： 648-651   1991年

  852. Doping of gallium nitride with silicon and properties of blue m/i/n/n+ gallium nitride LED with silicon-doped n+-layer by MOVPE 査読有り

    Koide N., Kato H., Sassa M., Yamasaki S., Manabe K., Hashimoto M., Amano H., Hiramatsu K., Akasaki I.

    J. Crystal Growth   115 巻 ( 0 ) 頁： 639-642   1991年

  853. Growth mechanism of gallium nitride grown on sapphire with aluminum nitride buffer layer by MOVPE 査読有り

    Hiramatsu K., Itoh S., Amano H., Akasaki I., Kuwano N., Shiraishi T., Oki K.

    J. Crystal Growth   115 巻 ( 0 ) 頁： 628-633   1991年

  854. Cross-sectional TEM study of microstructures in MOVPE gallium nitride films grown on a -alumina with a buffer layer of aluminum nitride 査読有り

    Kuwano Noriyuki, Shiraishi Tadayoshi, Koga Akihiro, Oki Kensuke, Hiramatsu Kazumasa, Amano Hiroshi, Itoh Kenji, Akasaki Isamu.

    J. Crystal Growth   115 巻 ( 0 ) 頁： 381-387   1991年

  855. Growth of single crystalline gallium nitride film on silicon substrate using 3C silicon carbide as an intermediate layer 査読有り

    Takeuchi Tetsuya, Amano Hiroshi, Hiramatsu Kazumasa, Sawaki Nobuhiko, Akasaki Isamu.

    J. Crystal Growth   115 巻 ( 0 ) 頁： 634-638   1991年

  856. MOVPE growth of gallium nitride on a misoriented sapphire substrate 査読有り

    Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu, Kato Hisaki, Koide Norikatsu, Manabe Katsuhide.

    J. Crystal Growth   107 巻 ( 0 ) 頁： 509-512   1991年

  857. Dynamics of laser sputtering at gallium nitride, gallium phosphide, and gallium arsenide surfaces 査読有り

    Namiki A., Katoh K., Yamashita Y., Matsumoto Y., Amano H., Akasaki I.

    J. Apl. Phys.   70 巻 ( 0 ) 頁： 3268-3274   1991年

  858. Metalorganic vapor phase epitaxial growth and properties of gallium mononitride/aluminum gallium nitride (Al01Ga09N) layered structures 査読有り

    Itoh Kenji, Kawamoto Takeshi, Amano Hiroshi, Hiramatsu Kazumasa, Akasaki Isamu.

    Jpn. J. Appl. Phys.   30 巻 ( 0 ) 頁： 1924-1927   1991年

  859. Stimulated emission near ultraviolet at room temperature from a gallium nitride (GaN) film grown on sapphire by MOVPE using an aluminum nitride (AlN) buffer layer 査読有り

    Amano Hiroshi, Asahi Tsunemori, Akasaki Isamu.

    Jpn. J. Appl. Phys.   29 巻 ( 0 ) 頁： L205-L206   1990年

  860. Growth and luminescence properties of magnesium-doped gallium nitride (GaN) prepared by MOVPE 査読有り

    Amano Hiroshi, Kitoh Masahiro, Hiramatsu Kazumasa, Akasaki Isamu.

    J. Electrochem. Soc.   137 巻 ( 0 ) 頁： 1639-1641   1990年

  861. UV and blue electroluminescence from aluminum/magnesium-doped gallium nitride/gallium nitride (Al/GaN:Mg/GaN) LED treated with low-energy electron beam irradiation (LEEBI) 査読有り

    Amano H., Kitoh M., Hiramatsu K., Akasaki I.

    Inst. Phys. Conf. Ser.   106 巻 ( 0 ) 頁： 725-730   1990年

  862. Preparation of aluminum gallium nitride/gallium nitride heterostructure by MOVPE 査読有り

    Ito Kenji, Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu.

    J. Crystal Growth   104 巻 ( 0 ) 頁： 533-538   1990年

  863. Growth of single crystal gallium nitride substrate using hydride vapor phase epitaxy 査読有り

    Naniwae Kouichi, Itoh Shigetoshi, Amano Hiroshi, Itoh Kenji, Hiramatsu Kazumasa, Akasaki Isamu.

    J. Crystal Growth   99 巻 ( 0 ) 頁： 381-384   1990年

  864. Cathodoluminescence of MOVPE-grown gallium nitride layer on a -alumina 査読有り

    Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu.

    J. Crystal Growth   99 巻 ( 0 ) 頁： 375-380   1990年

  865. P-type conduction in magnesium-doped gallium nitride treated with low-energy electron beam irradiation (LEEBI) 査読有り

    H. Amano, M. Kito, K. Hiramatsu, I. Akasaki

    Jpn. J. Appl. Phys.   28 巻 ( 0 ) 頁： L2112-L2114   1989年

  866. Effects of aluminum nitride buffer layer on crystallographic structure and on electrical and optical properties of gallium nitride and aluminum gallium nitride (Ga1-xAlxN, 0< x < 0.4) films grown on sapphire substrate by MOVPE 査読有り

    I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki

    J. Crystal Growth   98 巻 ( 0 ) 頁： 209-219   1989年

  867. Heteroepitaxial growth and the effect of strain on the luminescent properties of gallium mononitride films on (11-20) and (0001) sapphire substrates 査読有り

    H. Amano, K. Hiramatsu, I. Akasaki

    Jpn. J. Appl. Phys.   27 巻 ( 0 ) 頁： L1384-L1386   1988年

  868. Electron beam effects on blue luminescence of zinc-doped gallium mononitride 査読有り

    H. Amano, I. Akasaki, T. Kozawa, K. Hiramatsu, N. Sawaki, K. Ikeda, Y. Ishii

    J. Lumin.   40-41 巻 ( 0 ) 頁： 121-122   1988年

  869. Effects of the buffer layer in metalorganic vapor phase epitaxy of gallium mononitride on sapphire substrate 査読有り

    H. Amano, I. Akasaki, K. Hiramatsu, N. Koide, N. Sawaki

    Thin Solid Films   163 巻 ( 0 ) 頁： 415-420   1988年

  870. Zinc related electroluminescent properties in MOVPE grown gallium nitride 査読有り

    H. Amano, K. Hiramatsu, M. Kito, N. Sawaki, I. Akasaki

    J. Crystal Growth   93 巻 ( 0 ) 頁： 79-82   1988年

  871. High-efficiency blue LED utilizing gallium nitride (GaN) film with an aluminum nitride (AlN) buffer layer grown by MOVPE 査読有り

    I. Akasaki, H. Amano, K. Hiramatsu, N. Sawaki

    Inst. Phys. Conf. Ser.   91 巻 ( 0 ) 頁： 633-636   1988年

  872. Crystal growth and properties of gallium nitride and its blue light-emitting diode 査読有り

    I. Akasaki, H. Amano, N. Sawaki, M. Hashimoto, Y. Ohki, Y. Toyoda

    Jpn Ann. Rev. Elec. Comp. & Telecom.   19 巻 ( 0 ) 頁： 295-307   1986年

  873. Metalorganic vapor phase epitaxial growth of a high quality gallium nitride (GaN) film using an aluminum nitride (AlN) buffer layer 査読有り

    H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda

    Appl. Phys. Lett.   48 巻 ( 0 ) 頁： 353-355   1986年

  874. Effects of hydrogen in an ambient on the crystal growth of gallium nitride using trimethyl gallium and ammonia 査読有り

    M. Hashimoto, H. Amano, N. Sawaki, I. Akasaki

    J. Crystal Growth   68 巻 ( 0 ) 頁： 163-168   1984年